电沉积CuInSe2薄膜的光电化学、电解质电反射率和拓扑特性

N. Khare , G. Razzini, L. Peraldo Bicelli
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引用次数: 2

摘要

在含SeO2的氯化物浴中电沉积得到n型CuInSe2薄膜,并在不同温度的N2 + 5% H2或百万分之几O2中退火,研究了其光电化学和电解质电反射行为。测定了薄膜-聚硫化物电解质结的基本参数,并在光电化学电池中测试了薄膜的性能和稳定性。最后,用白光斑和细激光束对薄膜进行逐点表面研究,发现薄膜的光电化学和电解质电反射响应不均匀,这可能与掺杂物分布不均匀有关。
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Photoelectrochemical, electrolyte electroreflectance and topological characterization of electrodeposited CuInSe2 films

n-Type CuInSe2 thin films obtained by electrodeposition from a chloride bath containing SeO2 and annealed at different temperatures in N2 plus either 5% H2 or a few parts per million O2 were investigated to discover their photoelectrochemical and electrolyte electroreflectance behaviour. The fundamental parameters of the thin film-polysulphide electrolyte junction were determined and the performance and stability of the films were examined in photoelectrochemical cells. Finally, a point-by-point surface investigation with both a white light spot and a thin laser beam was performed, showing the non-uniform photoelectrochemical and electrolyte electroreflectance response of the films which could be related to inhomogeneous dopant distribution.

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