Kamal Zeghdar , Hichem Bencherif , Lakhdar Dehimi , Fortunato Pezzimenti , Francesco G. DellaCorte
{"title":"温度传感用W/4H-SiC肖特基势垒二极管正向偏置电流-电压-温度特性的仿真与分析","authors":"Kamal Zeghdar , Hichem Bencherif , Lakhdar Dehimi , Fortunato Pezzimenti , Francesco G. DellaCorte","doi":"10.1016/j.ssel.2020.08.001","DOIUrl":null,"url":null,"abstract":"<div><p>The current-voltage (<em>I<sub>D</sub>-V<sub>D</sub></em>) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias current ranging from 100 nA up to 10 mA. The main device parameters, such as the barrier height and ideality factor are found strongly temperature-dependent. The observed behaviours are interpreted by using the thermionic emission (TE) theory with a single Gaussian distribution of the barrier height (BH). The corresponding Richardson constant is A* = 148.8 Acm<sup>−2</sup>K<sup>−2</sup>. This value is close to the theoretical one of 146 Acm<sup>−2</sup>K<sup>−2</sup> for n-type 4H-SiC.</p></div>","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"2 ","pages":"Pages 49-54"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/j.ssel.2020.08.001","citationCount":"3","resultStr":"{\"title\":\"Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications\",\"authors\":\"Kamal Zeghdar , Hichem Bencherif , Lakhdar Dehimi , Fortunato Pezzimenti , Francesco G. DellaCorte\",\"doi\":\"10.1016/j.ssel.2020.08.001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The current-voltage (<em>I<sub>D</sub>-V<sub>D</sub></em>) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias current ranging from 100 nA up to 10 mA. The main device parameters, such as the barrier height and ideality factor are found strongly temperature-dependent. The observed behaviours are interpreted by using the thermionic emission (TE) theory with a single Gaussian distribution of the barrier height (BH). The corresponding Richardson constant is A* = 148.8 Acm<sup>−2</sup>K<sup>−2</sup>. This value is close to the theoretical one of 146 Acm<sup>−2</sup>K<sup>−2</sup> for n-type 4H-SiC.</p></div>\",\"PeriodicalId\":101175,\"journal\":{\"name\":\"Solid State Electronics Letters\",\"volume\":\"2 \",\"pages\":\"Pages 49-54\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/j.ssel.2020.08.001\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2589208820300168\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2589208820300168","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications
The current-voltage (ID-VD) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias current ranging from 100 nA up to 10 mA. The main device parameters, such as the barrier height and ideality factor are found strongly temperature-dependent. The observed behaviours are interpreted by using the thermionic emission (TE) theory with a single Gaussian distribution of the barrier height (BH). The corresponding Richardson constant is A* = 148.8 Acm−2K−2. This value is close to the theoretical one of 146 Acm−2K−2 for n-type 4H-SiC.
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