1995 IEEE International SOI Conference Proceedings

High speed performance of 0.35 /spl mu/m CMOS gates fabricated on low dose SIMOX substrates with/without N-well underneath the buried oxide layer

Pub Date : 1995-10-03 DOI: 10.1109/SOI.1995.526437 A. Yoshino, K. Kumagai, N. Hamatake, T. Tatsumi, H. Onishi, S. Kurosawa, K. Okumura

SOI material characterization using optical second harmonic generation

Pub Date : 1995-10-03 DOI: 10.1109/SOI.1995.526477 Y. Gu, T. Vu, G. Li

Energy levels of electrons trapped in buried oxide of SIMOX structures

Pub Date : 1995-10-03 DOI: 10.1109/SOI.1995.526481 V. Afanas'ev, A. Revesz, W. Jenkins, H. Hughes