Proceedings of 8th International Conference on Indium Phosphide and Related Materials

High characteristics temperature of strain-compensated 1.3 /spl mu/m InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy

Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492400 P. Savolainen, M. Toivonen, A. Salokatve, H. Asonen, R. Murison

Study of defect structures in MLEK grown InP single crystals by synchrotron white beam X-ray topography

Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492322 W. Si, H. Chung, M. Dudley, A. Anselmo, D. F. Bliss, V. Prasad

1.55 /spl mu/m MQW-DFB Q-switch two-section laser for high frequency-short pulse generation

Pub Date : 1996-04-21 DOI: 10.1109/ICIPRM.1996.492409 E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau