Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492400
P. Savolainen, M. Toivonen, A. Salokatve, H. Asonen, R. Murison
In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T/sub 0/ value of about 100 K in the temperature range 20-80/spl deg/C and low threshold current density of 87 A/cm/sup 2/ per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices.
{"title":"High characteristics temperature of strain-compensated 1.3 /spl mu/m InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy","authors":"P. Savolainen, M. Toivonen, A. Salokatve, H. Asonen, R. Murison","doi":"10.1109/ICIPRM.1996.492400","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492400","url":null,"abstract":"In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T/sub 0/ value of about 100 K in the temperature range 20-80/spl deg/C and low threshold current density of 87 A/cm/sup 2/ per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115115356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492322
W. Si, H. Chung, M. Dudley, A. Anselmo, D. F. Bliss, V. Prasad
The application of synchrotron white beam X-ray topography (SWBXT) as a non-destructive diagnostic technique to the characterization of defect structures in large size InP single crystals was presented. Various kinds of defect configurations, including slip bands, micro-twin lamellae, growth striations, individual dislocations, and precipitates, were revealed. The relationship between defect formation and growth conditions was briefly discussed.
{"title":"Study of defect structures in MLEK grown InP single crystals by synchrotron white beam X-ray topography","authors":"W. Si, H. Chung, M. Dudley, A. Anselmo, D. F. Bliss, V. Prasad","doi":"10.1109/ICIPRM.1996.492322","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492322","url":null,"abstract":"The application of synchrotron white beam X-ray topography (SWBXT) as a non-destructive diagnostic technique to the characterization of defect structures in large size InP single crystals was presented. Various kinds of defect configurations, including slip bands, micro-twin lamellae, growth striations, individual dislocations, and precipitates, were revealed. The relationship between defect formation and growth conditions was briefly discussed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123541626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492409
E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau
The generation of short optical pulses at 1.55 /spl mu/m with a high frequency repetition is of great interest for future optical communication systems as Optical Time Division Multiplexed (OTDM) systems. Such sources have been widely investigated but most of the techniques (active, passive and hybrid modelocking...) are often limited by a low output optical power and a small tunability of the repetition rate. To overcome these limitations and to allow a flexible soliton transmission, we developed a two-section MQW-DFB laser diode structure based on the Q-switching effect. The two-segment configuration consists of a long length (gain section) combined to a short length (saturable absorber section). The gain section is biased in a CW forward mode while a modulated voltage, around a value lower than the built-in voltage (0.8 V for 1.53 /spl mu/m), is applied to the saturable absorber. The LD fabrication and characteristics are discussed.
产生频率为1.55 /spl μ m /m的高重复短光脉冲对于光时分复用(OTDM)等未来光通信系统具有重要意义。这类光源已经得到了广泛的研究，但大多数技术(主动、被动和混合模型锁定…)往往受到输出光功率低和重复率可调性小的限制。为了克服这些限制并允许灵活的孤子传输，我们开发了基于q开关效应的两段MQW-DFB激光二极管结构。两段结构包括一个长长度(增益部分)和一个短长度(可饱和吸收部分)。增益部分以连续波正向模式偏置，同时在可饱和吸收器上施加一个约低于内置电压(1.53 /spl mu/m时0.8 V)的调制电压。讨论了LD的制备方法和特点。
{"title":"1.55 /spl mu/m MQW-DFB Q-switch two-section laser for high frequency-short pulse generation","authors":"E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau","doi":"10.1109/ICIPRM.1996.492409","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492409","url":null,"abstract":"The generation of short optical pulses at 1.55 /spl mu/m with a high frequency repetition is of great interest for future optical communication systems as Optical Time Division Multiplexed (OTDM) systems. Such sources have been widely investigated but most of the techniques (active, passive and hybrid modelocking...) are often limited by a low output optical power and a small tunability of the repetition rate. To overcome these limitations and to allow a flexible soliton transmission, we developed a two-section MQW-DFB laser diode structure based on the Q-switching effect. The two-segment configuration consists of a long length (gain section) combined to a short length (saturable absorber section). The gain section is biased in a CW forward mode while a modulated voltage, around a value lower than the built-in voltage (0.8 V for 1.53 /spl mu/m), is applied to the saturable absorber. The LD fabrication and characteristics are discussed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116071399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491963
R. Zimmermann, S. Kramer, F. Steinhagen, H. Hillmer, H. Burkhard, A. Hangleiter
Carrier transport is supposed to be one of the major limiting processes for the high speed dynamics of SCH-MQW laser structures. It contributes to gain compression in addition to phenomena like spectral holeburning or carrier heating. The carrier transport effect also shows its influence in an RC-like rolloff of the high frequency response of laser devices. This reduction in bandwidth has been studied in the past to overcome transport problems in finding the appropriate structure, It has been proposed that it is mostly the slow transport of the heavier holes which limits the laser bandwidth. In this paper we have studied the phenomenon of carrier transport by investigating two asymmetric confined laser structures, using a parasitic-free optical modulation method. This made it possible to measure the apparent carrier transport time not only in total but for each side of the confinement layer. Finally we result in a diffusion constant for the barrier/confinement carriers in InGaAlAs material which is in good agreement with reported mobilities.
{"title":"Parasitic-free study of carrier transport in asymmetric 1.55 /spl mu/m MQW laser structures","authors":"R. Zimmermann, S. Kramer, F. Steinhagen, H. Hillmer, H. Burkhard, A. Hangleiter","doi":"10.1109/ICIPRM.1996.491963","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491963","url":null,"abstract":"Carrier transport is supposed to be one of the major limiting processes for the high speed dynamics of SCH-MQW laser structures. It contributes to gain compression in addition to phenomena like spectral holeburning or carrier heating. The carrier transport effect also shows its influence in an RC-like rolloff of the high frequency response of laser devices. This reduction in bandwidth has been studied in the past to overcome transport problems in finding the appropriate structure, It has been proposed that it is mostly the slow transport of the heavier holes which limits the laser bandwidth. In this paper we have studied the phenomenon of carrier transport by investigating two asymmetric confined laser structures, using a parasitic-free optical modulation method. This made it possible to measure the apparent carrier transport time not only in total but for each side of the confinement layer. Finally we result in a diffusion constant for the barrier/confinement carriers in InGaAlAs material which is in good agreement with reported mobilities.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116243700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491934
R. Bauknecht, H. Schneibel, J. Schmid, H. Melchior
A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f/sub T/=66 GHz and f/sub max/=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 /spl Omega/ and current swings of 120 mA.
{"title":"A 12 Gb/s laser and optical modulator driver circuit with InGaAs/InP double heterostructure bipolar transistors","authors":"R. Bauknecht, H. Schneibel, J. Schmid, H. Melchior","doi":"10.1109/ICIPRM.1996.491934","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491934","url":null,"abstract":"A versatile driver circuit for semiconductor lasers and optical modulators in optical fiber links is presented. The ICs are fabricated in a MOVPE-based InGaAs/InP double heterostructure bipolar transistor technology with f/sub T/=66 GHz and f/sub max/=107 GHz. The circuits operate up to 12 Gb/s with maximum output voltages of 3.0 V across 25 /spl Omega/ and current swings of 120 mA.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124690611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491925
B. Lakshmi, B. Robinson, D. Cassidy
The authors report the measurement of the polarization of luminescence from the [001] surface ([001] growth direction) and relate the observations to interfacial structure of the quantum wells in zinc blende semiconductors.
{"title":"[001] interface anisotropy using degree of polarization [quantum wells]","authors":"B. Lakshmi, B. Robinson, D. Cassidy","doi":"10.1109/ICIPRM.1996.491925","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491925","url":null,"abstract":"The authors report the measurement of the polarization of luminescence from the [001] surface ([001] growth direction) and relate the observations to interfacial structure of the quantum wells in zinc blende semiconductors.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123836156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.491935
Cynthia Baringer, J. Jensen, Larry Burns, Bob Walden
A 3-bit multi-Gigasamples/sec (Gs/s) flash analog-to-digital converter (ADC) for high-speed data acquisition systems is reported in this paper. Nyquist operation up to 8 Gs/s has been achieved. The quantizer can convert analog input signals beyond fs/2 up to fs at a sampling rate of 5 Gs/s. In addition, the converter can be operated up to 12.7 Gs/s when the input signal is at low frequencies. This ADC is fabricated in an AlInAs-GaInAs HBT process fabricated on InP substrates with an f/sub T/ of 75 GHz and f/sub max/ of 85 GHz.
{"title":"3-bit, 8 GSPS flash ADC","authors":"Cynthia Baringer, J. Jensen, Larry Burns, Bob Walden","doi":"10.1109/ICIPRM.1996.491935","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.491935","url":null,"abstract":"A 3-bit multi-Gigasamples/sec (Gs/s) flash analog-to-digital converter (ADC) for high-speed data acquisition systems is reported in this paper. Nyquist operation up to 8 Gs/s has been achieved. The quantizer can convert analog input signals beyond fs/2 up to fs at a sampling rate of 5 Gs/s. In addition, the converter can be operated up to 12.7 Gs/s when the input signal is at low frequencies. This ADC is fabricated in an AlInAs-GaInAs HBT process fabricated on InP substrates with an f/sub T/ of 75 GHz and f/sub max/ of 85 GHz.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116362044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492297
R. LaPierre, B. Robinson, D. A. Thompson
In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates.
{"title":"Improved structural and optical properties of InGaAsP grown on InP by ECR plasma-assisted epitaxy","authors":"R. LaPierre, B. Robinson, D. A. Thompson","doi":"10.1109/ICIPRM.1996.492297","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492297","url":null,"abstract":"In this work, plasma-assisted epitaxy is be shown to be an alternative technique for reducing the lateral composition modulation (LCM) in thick InGaAsP layers and single quantum wells (QWs) grown on (100) InP substrates.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124323765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492268
F. Reier, C. Bornholdt, D. Hoffmann, F. Kappe, L. Morl
In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material.
{"title":"Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures","authors":"F. Reier, C. Bornholdt, D. Hoffmann, F. Kappe, L. Morl","doi":"10.1109/ICIPRM.1996.492268","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492268","url":null,"abstract":"In this work we have investigated the MOVPE growth of multi-period InGaAsP/InP quantum confined Stark effect (QCSE) layer structures and provide evidence that the QCSE response can be influenced by optimizing the gas exchange procedure, mainly to minimize carry-over effects. Secondly, we present new results on the thermal stability behaviour of these MQW structures which appear to be strongly related with the underlying buffer layer and substrate material.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127714841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1996-04-21DOI: 10.1109/ICIPRM.1996.492317
K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J. Zettler, W. Richter, P. Kurpas, M. Weyers
In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth.
{"title":"Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy","authors":"K. Knorr, A. Rumberg, M. Zorn, C. Meyne, T. Trepk, J. Zettler, W. Richter, P. Kurpas, M. Weyers","doi":"10.1109/ICIPRM.1996.492317","DOIUrl":"https://doi.org/10.1109/ICIPRM.1996.492317","url":null,"abstract":"In a metal organic vapour phase epitaxy (MOVPE) reactor two optical methods, reflectance anisotropy spectroscopy (RAS) and spectroscopic ellipsometry (SE) are applied simultaneously for a general characterisation of all steps of growth. The deoxidation behaviour of InP is studied in order to determine the desorption temperature of InP oxide. The influences of doping to the optical spectra are measured with RAS and the surface temperature of InP is determined in-situ from the optical data. Finally, the growth rates of InGaP on GaAs are determined with RAS by the evaluation of Fabry-Perot like oscillations during growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121716944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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