Numerical Corrections to Estimate Depletion Region Width in Pseudo-two-dimensional Model of Double-Gate Tunneling FET

Abstract

There is always a great demand for TFET analytical models to understand its underlined physics. One of the most widely known and citable models is the pseudo model as it gives satisfying results compared to TCAD simulations. However, the calculation of the depletion regions lengths is erroneous when using fully analytical solutions. The base on which the depletion regions is calculated should be revised to accurately model the electrostatic potential. In this work, we review the expressions that are based on pn junction assumption regarding the depletion regions lengths. A discussion is provided to prove the inability of the used equation to correctly predict the depletion lengths inside the source and the drain.