An 88~100 GHz High-Robustness Low-Noise Amplifier with 3.0~3.5 dB Noise Figure Using $0.1\mu \mathrm{m}$ GaN-on-SiC process

Abstract

This paper demonstrates the designed process and experimental performance of a W -band low-noise amplifier (LNA) MMIC based on a $0.1\mu m$ gate length GaN-on-SiC process. A considerable available gain can be realized at low voltage in W-band. At the same time, the desired LNA takes into account enhanced output power, large power capacitance, high withstand voltage, anti-static electricity and improved reliability of GaN technology, which is more convenient to integrate with other GaN power amplifiers and switches. The LNA is composed of a 3-stage common-source amplifier constructed to operate over an 88~100 GHz frequency band. This measured amplifier achieves gain of 20-21dB, noise figure of 3.0-3.5dB, output power of 14.5dBm at 1dB compression point (P-1), power capacitance of 4 W, withstand voltage of 45 V and anti-static electricity of 2000 V. The MMIC is 3.1 $\mathrm{x}1.5\text{mm}^{2}$ in size and consumes 0.4 W of dc power from a 5 V supply.