M. Sayginer, M. Yazgi, A. Toker, H. Kuntman, B. Virdee
{"title":"Decade bandwidth single and cascaded travelling wave medium power amplifiers using sige hbts","authors":"M. Sayginer, M. Yazgi, A. Toker, H. Kuntman, B. Virdee","doi":"10.1109/ECCTD.2011.6043833","DOIUrl":null,"url":null,"abstract":"This paper presents two integrated class-A travelling wave medium power amplifiers employing 0.35µm SiGe HBT process. The first amplifier realized is a 1.3×1mm2 device comprising of a single-stage configuration using a single transistor that exhibits an average small-signal gain of 7dB and power level of 14dBm between 0.25 to 2.5GHz while maintaining power-added efficiency in the range 30% to 10%. The second amplifier is 1.8×2.3mm2 device comprising of a driver stage cascaded with two identical amplifier stages in a parallel configuration whose outputs are combined together to enhance the devices output power by 3dB across the wideband frequency range. This amplifier's unique topology is implemented using a version of the first amplifier. The amplifier's measured output power was approximately 18dBm, the average small-signal gain was 21dB, and efficiency between 30% to 10% across 0.2–2.2GHz.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043833","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents two integrated class-A travelling wave medium power amplifiers employing 0.35µm SiGe HBT process. The first amplifier realized is a 1.3×1mm2 device comprising of a single-stage configuration using a single transistor that exhibits an average small-signal gain of 7dB and power level of 14dBm between 0.25 to 2.5GHz while maintaining power-added efficiency in the range 30% to 10%. The second amplifier is 1.8×2.3mm2 device comprising of a driver stage cascaded with two identical amplifier stages in a parallel configuration whose outputs are combined together to enhance the devices output power by 3dB across the wideband frequency range. This amplifier's unique topology is implemented using a version of the first amplifier. The amplifier's measured output power was approximately 18dBm, the average small-signal gain was 21dB, and efficiency between 30% to 10% across 0.2–2.2GHz.
本文介绍了两种采用0.35 μ m SiGe HBT工艺的集成a类行波中功率放大器。实现的第一个放大器是1.3×1mm2器件，由单级配置组成，使用单晶体管，在0.25至2.5GHz之间显示出7dB的平均小信号增益和14dBm的功率水平，同时保持30%至10%的功率附加效率。第二个放大器是1.8×2.3mm2装置，包括一个驱动器级联两个相同的并联配置的放大器级，其输出组合在一起，以在宽带频率范围内提高3dB的设备输出功率。该放大器的独特拓扑是使用第一个放大器的一个版本来实现的。放大器的测量输出功率约为18dBm，平均小信号增益为21dB，在0.2-2.2GHz范围内效率在30%至10%之间。
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