{"title":"4-bit, 15 GS/s ADC in SiGe","authors":"Y. Borokhovych, H. Gustat","doi":"10.1109/NORCHP.2008.4738325","DOIUrl":null,"url":null,"abstract":"This paper presents a high-speed 4 bits full-flash Analog-to-Digital Converter for an UWB radar applications, implemented in 190 GHz SiGe BiCMOS technology. The ADC occupies 1.5 × 1.5 mm2, including bondpads. Converter has 6 GHz input bandwidth and operates up to 15 GSample/s. Power dissipation is 1 W including test buffers and 600 mW for a core part itself.","PeriodicalId":199376,"journal":{"name":"2008 NORCHIP","volume":" 27","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 NORCHIP","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2008.4738325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper presents a high-speed 4 bits full-flash Analog-to-Digital Converter for an UWB radar applications, implemented in 190 GHz SiGe BiCMOS technology. The ADC occupies 1.5 × 1.5 mm2, including bondpads. Converter has 6 GHz input bandwidth and operates up to 15 GSample/s. Power dissipation is 1 W including test buffers and 600 mW for a core part itself.
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