A. Panchal, Ankit Malik, Bidisha Nath, Praveen C Ramamurthy
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引用次数: 1
Abstract
This work presents the sensing ability demonstrated by thiophene derivative in an OFET architecture. The detection ability of the fabricated device was tested in real-time for acetone at various intervals manifesting as variation in drain currents. 1x1 cm2 90 nm thermal oxide substrate were used for lithographically patterning of interdigitated source-drain structures with a channel length of 40um. A reduction in drain current by ~35% and charge carrier mobility by ~ 53% was observed attributed to the sensing action performed by thiophene derivative film by acetone vapor interaction. The photoluminescence spectra corroborate the specific interaction of acetone molecules with sensing element.