M. Marso, M. Mikulics, A. Winden, Y. Arango, A. Schafer, Zdenek Sofer, D. Grutzmacher, H. Hardtdegen
{"title":"InGaN nano-LEDs for energy saving optoelectronics","authors":"M. Marso, M. Mikulics, A. Winden, Y. Arango, A. Schafer, Zdenek Sofer, D. Grutzmacher, H. Hardtdegen","doi":"10.1109/ASDAM.2014.6998707","DOIUrl":null,"url":null,"abstract":"Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p-GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge luminescence energy of the nano-LEDs could be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates; it depends linearly on the structure size. The results of reliability measurements prove that our technological process is perfectly suited for long-term operation of the LEDs without any indication of degradation effects. The presented technology shows strong potential for future low energy consumption optoelectronics.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Vertically integrated III-nitride nano-LEDs designed for operation in the telecommunication-wavelength range were fabricated and tested in the (p-GaN/InGaN/n-GaN/sapphire) material system. We found that the band edge luminescence energy of the nano-LEDs could be engineered by their size and by the strain interaction with the masked SiO2/GaN substrates; it depends linearly on the structure size. The results of reliability measurements prove that our technological process is perfectly suited for long-term operation of the LEDs without any indication of degradation effects. The presented technology shows strong potential for future low energy consumption optoelectronics.