A. Bairamis, A. Adikimenakis, A. O. Aijagunna, T. Kehagias, G. Dimitrakopulos, J. Kioseoglou, P. Komninou, C. Zervos, J. Kuzmík, A. Georgakilas
{"title":"Different polarities of InN (0001) heterostructures on Si (111) substrates","authors":"A. Bairamis, A. Adikimenakis, A. O. Aijagunna, T. Kehagias, G. Dimitrakopulos, J. Kioseoglou, P. Komninou, C. Zervos, J. Kuzmík, A. Georgakilas","doi":"10.1109/ASDAM.2014.6998663","DOIUrl":null,"url":null,"abstract":"The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct InN nucleation on Si at low temperature and N-rich conditions.","PeriodicalId":313866,"journal":{"name":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Tenth International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2014.6998663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The growth processes of plasma assisted molecular beam epitaxy (PAMBE) that result to heteroepitaxial growth of high crystal quality single polarity {0001} InN thin films on Si (111) substrates, with either N-face or In-face polarity, have been determined. N-face InN (000-1) films can be grown using high temperature AlN nucleation layer on Si (111) and In-face In (0001) films can be grown by direct InN nucleation on Si at low temperature and N-rich conditions.