{"title":"A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode","authors":"Xingyu Zhai, Wen-Yan Yin, Yanbin Yang, Wenchao Chen","doi":"10.1109/piers55526.2022.9792782","DOIUrl":null,"url":null,"abstract":"A compact model for set process of RRAM with graphene as electrode is proposed. Operation mechanisms, including the generation of oxygen vacancies, the migration of oxygen ions and the oxidation of graphene electrode, are considered to simulate the set process of RRAM. The simulated I-V characteristics of RRAM during set process agree well with previous experiments. The compact model shows good potential in simulation and design of emerging RRAM based integrated circuit.","PeriodicalId":422383,"journal":{"name":"2022 Photonics & Electromagnetics Research Symposium (PIERS)","volume":"7 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Photonics & Electromagnetics Research Symposium (PIERS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/piers55526.2022.9792782","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A compact model for set process of RRAM with graphene as electrode is proposed. Operation mechanisms, including the generation of oxygen vacancies, the migration of oxygen ions and the oxidation of graphene electrode, are considered to simulate the set process of RRAM. The simulated I-V characteristics of RRAM during set process agree well with previous experiments. The compact model shows good potential in simulation and design of emerging RRAM based integrated circuit.
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