{"title":"Tunnel junctions in GaN/AlN for optoelectronic applications","authors":"M. Grundmann, J. Speck, U. Mishra","doi":"10.1109/DRC.2005.1553039","DOIUrl":null,"url":null,"abstract":"The authors propose a new device design using the polarization properties of the III-nitrides system that eliminates the need for high doping concentrations and has the further benefit of potentially eliminating problematic p-type contacts. P-type material in the nitrides is plagued by high contact resistance and high sheet resistance. These problems could be eliminated by contacting n-type material that acts as a current spreading layer and using a tunnel junction to transfer current to p-type material with minimal losses (Takeuchi et al., 2001)","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
The authors propose a new device design using the polarization properties of the III-nitrides system that eliminates the need for high doping concentrations and has the further benefit of potentially eliminating problematic p-type contacts. P-type material in the nitrides is plagued by high contact resistance and high sheet resistance. These problems could be eliminated by contacting n-type material that acts as a current spreading layer and using a tunnel junction to transfer current to p-type material with minimal losses (Takeuchi et al., 2001)
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