{"title":"Low power interference-robust UWB Low Noise Amplifier in 0.18-μm CMOS technology","authors":"A. Youssef, J. Haslett","doi":"10.1109/MWSCAS.2007.4488732","DOIUrl":null,"url":null,"abstract":"This paper proposes a very low power low noise amplifier (LNA) operating from 3.1 GHz to 8 GHz for OFDM- UWB systems. The LNA is intended to cover groups 1 and 3 while filtering out group 2, whose spectrum is shared with WLAN signals representing troublesome interference. By utilizing both nMOS and pMOS transistors to boost the transconductance, the LNA draws only 1.5 mA from a 1.5 V supply. The LNA IC has been realized in 0.18 mum CMOS technology from TSMC.","PeriodicalId":256061,"journal":{"name":"2007 50th Midwest Symposium on Circuits and Systems","volume":"150 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 50th Midwest Symposium on Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSCAS.2007.4488732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper proposes a very low power low noise amplifier (LNA) operating from 3.1 GHz to 8 GHz for OFDM- UWB systems. The LNA is intended to cover groups 1 and 3 while filtering out group 2, whose spectrum is shared with WLAN signals representing troublesome interference. By utilizing both nMOS and pMOS transistors to boost the transconductance, the LNA draws only 1.5 mA from a 1.5 V supply. The LNA IC has been realized in 0.18 mum CMOS technology from TSMC.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
