Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells

Deewakar Poudel, Benjamin Belfore, Adam Masters, A. Rockett, S. Marsillac
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Abstract

Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 °C to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Overall, AgBr seems to be a suitable transport agent and beneficial for device fabrication.
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金属卤化物处理对高通量低温CIGS太阳能电池的影响
采用单段热共蒸发法在钼背触点上高速低温沉积铜铟镓二硒化半导体薄膜。沉积后处理是在350℃下闪蒸AgBr以诱导再结晶。通过SEM和XRD检测,形貌发生了变化,晶粒尺寸增大,FWHM减小。结果表明,经过AgBr气相处理后,器件性能得到了改善,所有光伏参数都得到了提高。总的来说,AgBr似乎是一种合适的运输剂,有利于器件制造。
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