D. Sotskov, V. Elesin, G. Nazarova, K. Amburkin, D. Amburkin, G. Chukov, N. Usachev, A. Nikiforov
{"title":"Design and Test Issues of a SOl CMOS Voltage Controlled Oscillators for Radiation Tolerant Frequency Synthesizers","authors":"D. Sotskov, V. Elesin, G. Nazarova, K. Amburkin, D. Amburkin, G. Chukov, N. Usachev, A. Nikiforov","doi":"10.1109/EWDTS.2018.8524835","DOIUrl":null,"url":null,"abstract":"Design and test issues of RF voltage controlled oscillators (VCOs) for space applications are presented. The proposed approach was demonstrated during the design and testing of the differential cross-coupled inductance-capacitance (DCC-LC) VCOs implemented in 350 nm and 180 nm SOI CMOS processes. According to the radiation test results the DCC-LC VCOs are tolerant to total ionizing dose damage up to 300 krad, low-sensitive to heavy ions exposure with LET up to 80 Me V. cm2/mg and can be effectively used in frequency synthesizers for space applications.","PeriodicalId":127240,"journal":{"name":"2018 IEEE East-West Design & Test Symposium (EWDTS)","volume":"75 13","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2018.8524835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Design and test issues of RF voltage controlled oscillators (VCOs) for space applications are presented. The proposed approach was demonstrated during the design and testing of the differential cross-coupled inductance-capacitance (DCC-LC) VCOs implemented in 350 nm and 180 nm SOI CMOS processes. According to the radiation test results the DCC-LC VCOs are tolerant to total ionizing dose damage up to 300 krad, low-sensitive to heavy ions exposure with LET up to 80 Me V. cm2/mg and can be effectively used in frequency synthesizers for space applications.
介绍了空间应用射频压控振荡器(vco)的设计和测试问题。该方法在350 nm和180 nm SOI CMOS工艺中实现的差分交叉耦合电感-电容(dc - lc)压控振荡器的设计和测试中得到了验证。根据辐射测试结果，DCC-LC vco可耐受高达300 krad的总电离剂量损伤，对LET高达80 Me V. cm2/mg的重离子暴露低敏感，可有效用于空间应用的频率合成器。
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