S. Pinel, F. Cros, S. Nuttinck, S. Yoon, M. Allen, J. Laskar
{"title":"Very high-Q inductors using RF-MEMS technology for System-On-Package wireless communication integrated module","authors":"S. Pinel, F. Cros, S. Nuttinck, S. Yoon, M. Allen, J. Laskar","doi":"10.1109/MWSYM.2003.1210420","DOIUrl":null,"url":null,"abstract":"We present the fabrication and the characterization of very high-Q suspended RF-MEMS inductors for RF applications in C-band, X-band and Ku-band. The fabrication technique relies on conventional MEMS micro-machining on a low cost ceramic RF substrate. This low temperature, low cost manufacturing technique is therefore compatible with the fabrication of a complete S-O-P wireless integrated module. A physical based model of the inductors is presented. It takes into account the influence of substrate losses and radiation losses. The fabricated devices exhibit very high performances such as Q above 100 and self-resonance frequency as high as 50 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38
Abstract
We present the fabrication and the characterization of very high-Q suspended RF-MEMS inductors for RF applications in C-band, X-band and Ku-band. The fabrication technique relies on conventional MEMS micro-machining on a low cost ceramic RF substrate. This low temperature, low cost manufacturing technique is therefore compatible with the fabrication of a complete S-O-P wireless integrated module. A physical based model of the inductors is presented. It takes into account the influence of substrate losses and radiation losses. The fabricated devices exhibit very high performances such as Q above 100 and self-resonance frequency as high as 50 GHz.