Very high-Q inductors using RF-MEMS technology for System-On-Package wireless communication integrated module

S. Pinel, F. Cros, S. Nuttinck, S. Yoon, M. Allen, J. Laskar
{"title":"Very high-Q inductors using RF-MEMS technology for System-On-Package wireless communication integrated module","authors":"S. Pinel, F. Cros, S. Nuttinck, S. Yoon, M. Allen, J. Laskar","doi":"10.1109/MWSYM.2003.1210420","DOIUrl":null,"url":null,"abstract":"We present the fabrication and the characterization of very high-Q suspended RF-MEMS inductors for RF applications in C-band, X-band and Ku-band. The fabrication technique relies on conventional MEMS micro-machining on a low cost ceramic RF substrate. This low temperature, low cost manufacturing technique is therefore compatible with the fabrication of a complete S-O-P wireless integrated module. A physical based model of the inductors is presented. It takes into account the influence of substrate losses and radiation losses. The fabricated devices exhibit very high performances such as Q above 100 and self-resonance frequency as high as 50 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"38","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 38

Abstract

We present the fabrication and the characterization of very high-Q suspended RF-MEMS inductors for RF applications in C-band, X-band and Ku-band. The fabrication technique relies on conventional MEMS micro-machining on a low cost ceramic RF substrate. This low temperature, low cost manufacturing technique is therefore compatible with the fabrication of a complete S-O-P wireless integrated module. A physical based model of the inductors is presented. It takes into account the influence of substrate losses and radiation losses. The fabricated devices exhibit very high performances such as Q above 100 and self-resonance frequency as high as 50 GHz.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
采用RF-MEMS技术的超高q电感器用于系统级封装无线通信集成模块
我们介绍了用于c波段,x波段和ku波段射频应用的高q悬浮RF- mems电感器的制造和表征。制造技术依赖于传统的MEMS微加工在低成本的陶瓷射频基板上。因此,这种低温,低成本的制造技术与完整的S-O-P无线集成模块的制造相兼容。提出了电感器的物理模型。它考虑了衬底损耗和辐射损耗的影响。制作的器件具有非常高的性能,如Q > 100和自谐振频率高达50 GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
V-band transmission and reflection grid amplifier packaged in waveguide Experimental demonstration of a 35 GHz holographic antenna A novel vector control active patch for beamsteering with linearity enhancement capability Very high-Q inductors using RF-MEMS technology for System-On-Package wireless communication integrated module Novel microwave devices and structures based on the transmission line approach of meta-materials
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1