Pub Date : 2003-07-15DOI: 10.1109/MWSYM.2003.1210519
Chun-Tung Cheung, R. Tsai, R. Kagiwada, D. Rutledge
We designed and demonstrated two monolithic V-band grid amplifiers packaged in waveguides. We measured a 2 dB small-signal system gain for both transmission and reflection amplifiers. This is the first monolithic grid amplifier packaged and measured in a waveguide in the V-band.
{"title":"V-band transmission and reflection grid amplifier packaged in waveguide","authors":"Chun-Tung Cheung, R. Tsai, R. Kagiwada, D. Rutledge","doi":"10.1109/MWSYM.2003.1210519","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210519","url":null,"abstract":"We designed and demonstrated two monolithic V-band grid amplifiers packaged in waveguides. We measured a 2 dB small-signal system gain for both transmission and reflection amplifiers. This is the first monolithic grid amplifier packaged and measured in a waveguide in the V-band.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117305068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210520
A. Al-Zayed, S. Ortiz, M. Ozkar, A. Mortazawi
This paper presents experimental and numerical investigations on a 49-element Ka-band amplifier array. This study is aimed at determining the origin of various losses in the amplifier array. Passive simulation data confirms that the load seen by the active devices is well matched and that most of the power is coupled to the LSE/sub 10/ mode. This means that coherent power combining should take place if there is no phase and amplitude variation due to the active devices and phase correcting dielectric lenses.
{"title":"Numerical and experimental investigation of losses in a tray based spatial power amplifier","authors":"A. Al-Zayed, S. Ortiz, M. Ozkar, A. Mortazawi","doi":"10.1109/MWSYM.2003.1210520","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210520","url":null,"abstract":"This paper presents experimental and numerical investigations on a 49-element Ka-band amplifier array. This study is aimed at determining the origin of various losses in the amplifier array. Passive simulation data confirms that the load seen by the active devices is well matched and that most of the power is coupled to the LSE/sub 10/ mode. This means that coherent power combining should take place if there is no phase and amplitude variation due to the active devices and phase correcting dielectric lenses.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124432464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212487
J. Brinkhoff, A. Parker
Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.
{"title":"Implication of baseband impedance and bias for FET amplifier linearization","authors":"J. Brinkhoff, A. Parker","doi":"10.1109/MWSYM.2003.1212487","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212487","url":null,"abstract":"Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123179066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210455
T. Gasseling, S. Heckmann, D. Barataud, J. Nebus, J. Villotte, R. Quéré, D. Floriot, P. Auxemery
This paper presents an on-wafer set up for the characterization of high voltage (26V) power HBTs under simultaneous large pulsed RF signal and pulsed DC test conditions. Both RF power profiles and DC current/voltage profiles are measured thanks to the use of a pulsed VNA (for RF) and a sampling scope (for DC). Typically the pulse width range is (300 ns - 300 ms) and a 10% duty cycle is applied. RF power performances and DC consumption of the transistors under test are recorded at different time positions within the pulse width This enables to investigate the effects of transient thermal aspects on RF power characteristics. S Band Measurements of 10 Watt (20 finger 2*70mm/sup 2/ GaAs-GaInP HBTs from Thales; TRT and UMS foundry) with specific gold radiator are reported in this paper.
{"title":"Large signal pulsed RF and DC load pull characterization of high voltage 10W GaAs-GaInP HBTs","authors":"T. Gasseling, S. Heckmann, D. Barataud, J. Nebus, J. Villotte, R. Quéré, D. Floriot, P. Auxemery","doi":"10.1109/MWSYM.2003.1210455","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210455","url":null,"abstract":"This paper presents an on-wafer set up for the characterization of high voltage (26V) power HBTs under simultaneous large pulsed RF signal and pulsed DC test conditions. Both RF power profiles and DC current/voltage profiles are measured thanks to the use of a pulsed VNA (for RF) and a sampling scope (for DC). Typically the pulse width range is (300 ns - 300 ms) and a 10% duty cycle is applied. RF power performances and DC consumption of the transistors under test are recorded at different time positions within the pulse width This enables to investigate the effects of transient thermal aspects on RF power characteristics. S Band Measurements of 10 Watt (20 finger 2*70mm/sup 2/ GaAs-GaInP HBTs from Thales; TRT and UMS foundry) with specific gold radiator are reported in this paper.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127267147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210488
D. Peroulis, L. Katehi
This paper reports on the design, fabrication, and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40-160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).
{"title":"Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300%","authors":"D. Peroulis, L. Katehi","doi":"10.1109/MWSYM.2003.1210488","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210488","url":null,"abstract":"This paper reports on the design, fabrication, and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40-160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127378122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210476
T. Weldon, K. Miehle
A new linearization method is presented where a device with poor linearity is combined with a second device having good linearity. The resulting composite device has much better linearity than the two original devices. The new method is applicable to both receivers and transmitters, and is implemented as an integrated circuit without external components. Third order intermodulation distortion is canceled by appropriate design of the gains and intercept points of two amplifiers. Finally, hardware test data is presented both for an integrated circuit prototype and for a prototype using off-the-shelf amplifiers.
{"title":"Using amplifiers with poor linearity to linearize amplifiers with good linearity","authors":"T. Weldon, K. Miehle","doi":"10.1109/MWSYM.2003.1210476","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210476","url":null,"abstract":"A new linearization method is presented where a device with poor linearity is combined with a second device having good linearity. The resulting composite device has much better linearity than the two original devices. The new method is applicable to both receivers and transmitters, and is implemented as an integrated circuit without external components. Third order intermodulation distortion is canceled by appropriate design of the gains and intercept points of two amplifiers. Finally, hardware test data is presented both for an integrated circuit prototype and for a prototype using off-the-shelf amplifiers.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127459571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212563
T. Takenaka, T. Hiraoka, H. Jui-Pang
A stripline T-junction with a rectangular cut at the symmetric center is analyzed based on a two dimensional (2-D) planar circuit model, mode theory and the derived Foster-type equivalent network. Wide-band frequency characteristics are calculated with cut-size as a parameter, which leads to a discussion about transmission vs bandwidth characteristics, the realized limit of characteristics and determination of the optimum cut.
{"title":"Analysis of stripline T-junction with rectangular cut based on eigenmode expansion method and Foster-type equivalent network","authors":"T. Takenaka, T. Hiraoka, H. Jui-Pang","doi":"10.1109/MWSYM.2003.1212563","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212563","url":null,"abstract":"A stripline T-junction with a rectangular cut at the symmetric center is analyzed based on a two dimensional (2-D) planar circuit model, mode theory and the derived Foster-type equivalent network. Wide-band frequency characteristics are calculated with cut-size as a parameter, which leads to a discussion about transmission vs bandwidth characteristics, the realized limit of characteristics and determination of the optimum cut.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127465416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1212503
T. Shimura, T. Satoh, Y. Hasegawa, J. Fukaya
A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 /spl times/ 3.0 mm/sup 2/. The HPA achieved 570 mW output power per 1 mm/sup 2/ die area. This value is the highest power density at Ku/K/Ka-Band reported to date.
{"title":"A high power density, 6W MMIC for Ku/K-Band applications","authors":"T. Shimura, T. Satoh, Y. Hasegawa, J. Fukaya","doi":"10.1109/MWSYM.2003.1212503","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212503","url":null,"abstract":"A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 /spl times/ 3.0 mm/sup 2/. The HPA achieved 570 mW output power per 1 mm/sup 2/ die area. This value is the highest power density at Ku/K/Ka-Band reported to date.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125142376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210877
S. Srisathit, S. Virunphun, K. Bandudej, M. Chongcheawchamnan, A. Worapishet
A new dual-band 3-dB three-port power divider with arbitrary impedance terminations is presented in this paper. The structure is composed of a two-section transmission line transformer and an isolation resistor. The transmission line's electrical length is /spl pi//3 each at fundamental frequency, resulting in a 2/spl pi//3 total length. The proposed circuit's design equations and graph obtained from analytical results are also given. The technique is validated by the experimental results on 3-dB 900/1800 MHz power divider with Z/sub s/=100 /spl Omega/ and Z/sub L/=50 /spl Omega/. Good performances of the proposed power combiner/divider at both frequencies are obtained.
{"title":"A dual-band 3-dB three-port power divider based on a two-section transmission line transformer","authors":"S. Srisathit, S. Virunphun, K. Bandudej, M. Chongcheawchamnan, A. Worapishet","doi":"10.1109/MWSYM.2003.1210877","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210877","url":null,"abstract":"A new dual-band 3-dB three-port power divider with arbitrary impedance terminations is presented in this paper. The structure is composed of a two-section transmission line transformer and an isolation resistor. The transmission line's electrical length is /spl pi//3 each at fundamental frequency, resulting in a 2/spl pi//3 total length. The proposed circuit's design equations and graph obtained from analytical results are also given. The technique is validated by the experimental results on 3-dB 900/1800 MHz power divider with Z/sub s/=100 /spl Omega/ and Z/sub L/=50 /spl Omega/. Good performances of the proposed power combiner/divider at both frequencies are obtained.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125849473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-06-08DOI: 10.1109/MWSYM.2003.1210968
M. Obol, C. Vittoria
We have investigated the zero field permeability behavior of Y-type hexaferrites. The measured permeability from 0.045 to 10 GHz was theoretically explained in term of zero magnetic field multi-domain and domain wall resonance. The basal plane anisotropy field, H/sub /spl phi///sup A/, domain wall thickness /spl delta/ and length L of the domain wall were estimated from resonance and permeability data.
{"title":"Microwave permeability measurement of unsaturated hexaferrites of Y-type","authors":"M. Obol, C. Vittoria","doi":"10.1109/MWSYM.2003.1210968","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210968","url":null,"abstract":"We have investigated the zero field permeability behavior of Y-type hexaferrites. The measured permeability from 0.045 to 10 GHz was theoretically explained in term of zero magnetic field multi-domain and domain wall resonance. The basal plane anisotropy field, H/sub /spl phi///sup A/, domain wall thickness /spl delta/ and length L of the domain wall were estimated from resonance and permeability data.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125917480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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