Menka Jain, N. Karan, Jongsik Yoon, Haiyan Wang, R. Katiyar, Q. Jia
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引用次数: 0
Abstract
For the applications in tunable microwave devices, thin films of a potential candidate material, PbxSr1-xTiO3 (with ¿=0.3), were studied. To study dielectric proeprties in coplanar and metal-insulator-metal configuration, the PbxSr1-xTiO3 films were deposited on single crystalline LaAlO3 and conductive LaNiO3 coated LaAlO3 substrates using sol-gel technique. The film on LaAlO3 was highly c-axis oriented and epitaxial. At room temperature, dielectric tunability values as high as 18% (at 20kV/cm) and 70% (at 225kV/cm) were achieved for the Pb0.3Sr0.7TiO3 film on LaAlO3 and LaNiO3/LaAlO3, respectively.
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