Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693897
Joan Farre-Gisbert, Reynaldo Font-Hernandez, Lourdes Mestres-Vila, M. Martínez-Sarrión, O. Herrera
Multifunctional materials such as the single phase compound Pb(Fe0.5Nb0.5)O3 (PFN), where ferroelectric and magnetic order coexist, are very promising and have great interest from the academic and technological points of view. However, as was established in previous work, the occurrence of Fe2+ and oxygen vacancies originated during the sintering process increase electrical conductivity, dielectric loss, and space-charge accumulation at the grain boundary, all of them detrimental to optimal device performance.1-3 Here, a report on the effects of an O2 atmosphere during the calcination and sintering stages of the preparation process using the traditional ceramic method is presented. A comparative study of structural, morphological and small signal dielectric frequency-temperature response study, where appropriate microstructural and equivalent circuit models were established using the impedance spectroscopy technique is presented. Big differences in the hysteret!ic behavior of the samples prepared in the presence and without the O2 atmosphere were observed and are discussed. The O2 atmosphere improves the dielectric and ferroelectric properties largely, in comparison with previous reports on PFN ceramics where other methods such as sintering in air, Pb atmospheres or fabricated from sol-gel-derived powders were used. 1 O. Raymond et al, J. Appl. Phys. 97, 084107 (2005). 2 O. Raymond et al. J. Appl. Phys. 97, 084108 (2005). 3 O. Raymond et al. J. Appl. Phys. 99, 124101 (2006). This work was partially supported by DGAPA-UNAM Project IN109305-3 and CoNaCyT Projects No. 47714-F and 49986-F. The authors thank E. Aparicio, P. Casillas, I. Gradilla, and J. Peralta for their technical assistance.
{"title":"Effects on the dielectric and ferroelectric properties of an O2 atmosphere during sintering of Pb(Fe0.5Nb0.5)O3 ceramics","authors":"Joan Farre-Gisbert, Reynaldo Font-Hernandez, Lourdes Mestres-Vila, M. Martínez-Sarrión, O. Herrera","doi":"10.1109/ISAF.2008.4693897","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693897","url":null,"abstract":"Multifunctional materials such as the single phase compound Pb(Fe0.5Nb0.5)O3 (PFN), where ferroelectric and magnetic order coexist, are very promising and have great interest from the academic and technological points of view. However, as was established in previous work, the occurrence of Fe2+ and oxygen vacancies originated during the sintering process increase electrical conductivity, dielectric loss, and space-charge accumulation at the grain boundary, all of them detrimental to optimal device performance.1-3 Here, a report on the effects of an O2 atmosphere during the calcination and sintering stages of the preparation process using the traditional ceramic method is presented. A comparative study of structural, morphological and small signal dielectric frequency-temperature response study, where appropriate microstructural and equivalent circuit models were established using the impedance spectroscopy technique is presented. Big differences in the hysteret!ic behavior of the samples prepared in the presence and without the O2 atmosphere were observed and are discussed. The O2 atmosphere improves the dielectric and ferroelectric properties largely, in comparison with previous reports on PFN ceramics where other methods such as sintering in air, Pb atmospheres or fabricated from sol-gel-derived powders were used. 1 O. Raymond et al, J. Appl. Phys. 97, 084107 (2005). 2 O. Raymond et al. J. Appl. Phys. 97, 084108 (2005). 3 O. Raymond et al. J. Appl. Phys. 99, 124101 (2006). This work was partially supported by DGAPA-UNAM Project IN109305-3 and CoNaCyT Projects No. 47714-F and 49986-F. The authors thank E. Aparicio, P. Casillas, I. Gradilla, and J. Peralta for their technical assistance.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127147891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693881
D. Wu, Q. Zhou, B. Zhu, K. Shung, F. Djuth, C. G. Liu
This paper presents the latest development of high-frequency (>100MHz) PZT film ultrasonic transducers and kerfless arrays. PZT thick films of 12 ¿m in thickness were fabricated with a spin-coating method. The films were found to have a remanent polarization of 33 ¿C/cm2 and a coercive field Ec of 70 kV/cm. High-frequency (120MHz) single element transducers and a kerfless array were successfully fabricated with these films. The transducer and array have ¿6dB bandwidth of 40% without matching, and 60% with a layer of parylene as the matching layer. The single element transducer was found to have an axial resolution of 20¿m and lateral resolution of 100¿m. Ultrasonic images of a porcine eye were also successfully acquired with the single element transducer. Kerfless array imaging is onging.
{"title":"High-frequency (>100MHz) PZT thick film transducers and Kerfless arrays","authors":"D. Wu, Q. Zhou, B. Zhu, K. Shung, F. Djuth, C. G. Liu","doi":"10.1109/ISAF.2008.4693881","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693881","url":null,"abstract":"This paper presents the latest development of high-frequency (>100MHz) PZT film ultrasonic transducers and kerfless arrays. PZT thick films of 12 ¿m in thickness were fabricated with a spin-coating method. The films were found to have a remanent polarization of 33 ¿C/cm2 and a coercive field Ec of 70 kV/cm. High-frequency (120MHz) single element transducers and a kerfless array were successfully fabricated with these films. The transducer and array have ¿6dB bandwidth of 40% without matching, and 60% with a layer of parylene as the matching layer. The single element transducer was found to have an axial resolution of 20¿m and lateral resolution of 100¿m. Ultrasonic images of a porcine eye were also successfully acquired with the single element transducer. Kerfless array imaging is onging.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"10 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127379260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693883
T. Tsurumi, T. Hoshina, K. Takizawa, H. Kakemoto
The size effect of BaTiO3 (BTO) is the most important issue to design the high-capacitance MLCCs in the next generation. In the size effect of BTO ceramics and powders, the maxima of the permittivity were observed at certain grain size and the particle size. The permittivity maximum in the ceramics was due to the domain wall contribution, while that in the powders related with the complex structure of the BTO powders. Computer simulation technique was developed to predict the limit of capacitance density of the multilayer ceramics capacitors (MLCCs) produced by the current technology.
{"title":"Size effect of barium titanate and MLCCs in the next generation","authors":"T. Tsurumi, T. Hoshina, K. Takizawa, H. Kakemoto","doi":"10.1109/ISAF.2008.4693883","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693883","url":null,"abstract":"The size effect of BaTiO3 (BTO) is the most important issue to design the high-capacitance MLCCs in the next generation. In the size effect of BTO ceramics and powders, the maxima of the permittivity were observed at certain grain size and the particle size. The permittivity maximum in the ceramics was due to the domain wall contribution, while that in the powders related with the complex structure of the BTO powders. Computer simulation technique was developed to predict the limit of capacitance density of the multilayer ceramics capacitors (MLCCs) produced by the current technology.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124995430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693752
N. Orloff, J. Booth, M. Murakami, I. Takeuchi
We demonstrate a novel experimental technique to measure the complex permittivity of dielectric thin films over the frequency range from 100 Hz to 40 GHz. We apply this technique to determine the broadband permittivity for ferroelectric thin films such as PbTiO3 at room temperature. We discuss the value of such frequency-dependent measurements for determining the dielectric response of ferroelectric thin films at finite frequencies.
{"title":"Broadband permittivity measurements of thin-film ferroelectrics to 40 GHz","authors":"N. Orloff, J. Booth, M. Murakami, I. Takeuchi","doi":"10.1109/ISAF.2008.4693752","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693752","url":null,"abstract":"We demonstrate a novel experimental technique to measure the complex permittivity of dielectric thin films over the frequency range from 100 Hz to 40 GHz. We apply this technique to determine the broadband permittivity for ferroelectric thin films such as PbTiO3 at room temperature. We discuss the value of such frequency-dependent measurements for determining the dielectric response of ferroelectric thin films at finite frequencies.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122329493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693759
A. Kanareykin, S. Kazakov, E. Nansheva, A. Tagantsev, V. Yakovlev
We present recent results on development of BST based ferroelectric compositions synthesized for use in high power technology components for X-band and Ka-band RF systems and offer significant advantages for high power RF manipulation in the 300¿1000 MHz frequency range as well. These low loss ferroelectric materials can be used as key elements of both tuning and phase shifting components. Fast, electrically-controlled ferroelectric RF switches and phase shifters are under development for different accelerator applications in X, Ka and L - frequency bands either. The exact design of such a devise depends on the electrical parameters of particular ferroelectric material to be used, namely its dielectric constant, loss tangent and tunability. We have identified BST based ferroelectric-oxide compounds as suitable materials for a fast electrically-controlled 700 MHz, 50 kW tuner for Brookhaven National Lab and for high-power fast RF phase shifters to be used for SNS, Oakridge National Lab vector modulation applications. The bulk ferroelectric based phase shifter will allow coupling adjustment and control of the power consumption during the process of SC cavity filling, which is of great importance for the Intl. Linear Collider (ILC) program. New methods were developed in order to measure parameters of large ferroelectric components. The results of measurements are presented.
{"title":"Ferroelectric based technologies for high power RF and accelerator applications","authors":"A. Kanareykin, S. Kazakov, E. Nansheva, A. Tagantsev, V. Yakovlev","doi":"10.1109/ISAF.2008.4693759","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693759","url":null,"abstract":"We present recent results on development of BST based ferroelectric compositions synthesized for use in high power technology components for X-band and Ka-band RF systems and offer significant advantages for high power RF manipulation in the 300¿1000 MHz frequency range as well. These low loss ferroelectric materials can be used as key elements of both tuning and phase shifting components. Fast, electrically-controlled ferroelectric RF switches and phase shifters are under development for different accelerator applications in X, Ka and L - frequency bands either. The exact design of such a devise depends on the electrical parameters of particular ferroelectric material to be used, namely its dielectric constant, loss tangent and tunability. We have identified BST based ferroelectric-oxide compounds as suitable materials for a fast electrically-controlled 700 MHz, 50 kW tuner for Brookhaven National Lab and for high-power fast RF phase shifters to be used for SNS, Oakridge National Lab vector modulation applications. The bulk ferroelectric based phase shifter will allow coupling adjustment and control of the power consumption during the process of SC cavity filling, which is of great importance for the Intl. Linear Collider (ILC) program. New methods were developed in order to measure parameters of large ferroelectric components. The results of measurements are presented.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122469739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693751
M. Mirsaneh, B. Zalinska, O. Leisten, I. Reaney
Dielectrically-loaded quadrifillar-helix (D-LQH) antennas are used in applications such as global positioning systems and satellite radio where high gain is required for direct communication with satellites. The current generation of D-LQH antenna are made from hollow cylinders of medium permittivity (15Ç,ßå¿rÇß80), high quality factor (Qf), temperature stable ceramics coated with a helical Cu metallisation. To reduce the processing costs of the ceramic core, a castable bismuth niobate glass-ceramics (30% Bi2O3, 30% Nb2O5, 30% B2O3 and 10% SiO2, in mol%) has been developed. On crystallisation at 600°C, a nano-dendritic, pyrochlore-structured phase evolves with å¿r = 41 and Qf = 226. This phase is unstable at >700°C and is initially replaced by triclinic-BiNbO4 (BN) (700 Ç¿Ï 900°C) and then by orthorhombic BN (>900°C). Optimum properties for antenna core applications occur at 920°C heat treatment with å¿r = 15, Qf = 8000 GHz at which point the temperature ! coefficient of resonant frequency is ¿60 MK-1.
{"title":"Bismuth niobate glass-ceramics for dielectrically-loaded microwave antenna applications","authors":"M. Mirsaneh, B. Zalinska, O. Leisten, I. Reaney","doi":"10.1109/ISAF.2008.4693751","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693751","url":null,"abstract":"Dielectrically-loaded quadrifillar-helix (D-LQH) antennas are used in applications such as global positioning systems and satellite radio where high gain is required for direct communication with satellites. The current generation of D-LQH antenna are made from hollow cylinders of medium permittivity (15Ç,ßå¿rÇß80), high quality factor (Qf), temperature stable ceramics coated with a helical Cu metallisation. To reduce the processing costs of the ceramic core, a castable bismuth niobate glass-ceramics (30% Bi2O3, 30% Nb2O5, 30% B2O3 and 10% SiO2, in mol%) has been developed. On crystallisation at 600°C, a nano-dendritic, pyrochlore-structured phase evolves with å¿r = 41 and Qf = 226. This phase is unstable at >700°C and is initially replaced by triclinic-BiNbO4 (BN) (700 Ç¿Ï 900°C) and then by orthorhombic BN (>900°C). Optimum properties for antenna core applications occur at 920°C heat treatment with å¿r = 15, Qf = 8000 GHz at which point the temperature ! coefficient of resonant frequency is ¿60 MK-1.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122605038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693905
W. Makcharoen, J. Tontrakoon, P. Thavornyutikarn, D. Cann, T. Tunkasiri
In this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solid-state reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (¿r) still remains high. The sample CaCu3Ti3.76Mn0.24O12 exhibits a high ¿r over 1200 and a low dielectric loss below 0.06 at room temperature. Furthermore, the ¿r value of this sample shows rather independent with temperature. SEM micrographs show that the sample is dense (¿ 90% of theoretical density) and the grain size of the samples was gradually reduced with increasing x. This CaCu3Ti4-xMnxO12 system is believed to be a promising candidate for capacitor applications.
{"title":"Dielectric properties and microstructure of CaCu3Ti4-xMnxO12 ceramics","authors":"W. Makcharoen, J. Tontrakoon, P. Thavornyutikarn, D. Cann, T. Tunkasiri","doi":"10.1109/ISAF.2008.4693905","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693905","url":null,"abstract":"In this work, we have reported the dielectric properties and microstructure of the Mn doped CaCu3Ti4O12 (CCTO) ceramics. The conventional solid-state reaction was employed. By the partial Mn -for Ti substitution, the dielectric loss was suppressed remarkably while the dielectric constant (¿r) still remains high. The sample CaCu3Ti3.76Mn0.24O12 exhibits a high ¿r over 1200 and a low dielectric loss below 0.06 at room temperature. Furthermore, the ¿r value of this sample shows rather independent with temperature. SEM micrographs show that the sample is dense (¿ 90% of theoretical density) and the grain size of the samples was gradually reduced with increasing x. This CaCu3Ti4-xMnxO12 system is believed to be a promising candidate for capacitor applications.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117103173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693886
H. Ogihara, C. Randall, S. Trolier-McKinstry
The structural and dielectric properties of bulk (1¿x) BaTiO3¿x BiScO3 (x = 0 ¿ 0.6) ceramics were investigated to acquire a better understanding of the binary system, including determination of the phase diagram, dielectric properties, and the difference in roles of Bi and BiScO3 doping on BaTiO3. The solubility limit for BiScO3 into the BaTiO3 perovskite structure was determined to be about x = 0.4, which was much higher than the solubility of Bi alone. A structural change from tetragonal to pseudocubic was observed at about x = 0.05 ¿ 0.1 at room temperature. Dielectric measurements revealed the gradual change from typical ferroelectric behavior in pure BaTiO3 to a highly diffusive and dispersive relaxor behavior from 10 to 40 mol% BiScO3. Several of the compositions showed high permittivities (approximately 1000) with low temperature coefficients of capacitance.
{"title":"Structural and dielectric properties of BaTiO3 - BiScO3 ceramics","authors":"H. Ogihara, C. Randall, S. Trolier-McKinstry","doi":"10.1109/ISAF.2008.4693886","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693886","url":null,"abstract":"The structural and dielectric properties of bulk (1¿x) BaTiO3¿x BiScO3 (x = 0 ¿ 0.6) ceramics were investigated to acquire a better understanding of the binary system, including determination of the phase diagram, dielectric properties, and the difference in roles of Bi and BiScO3 doping on BaTiO3. The solubility limit for BiScO3 into the BaTiO3 perovskite structure was determined to be about x = 0.4, which was much higher than the solubility of Bi alone. A structural change from tetragonal to pseudocubic was observed at about x = 0.05 ¿ 0.1 at room temperature. Dielectric measurements revealed the gradual change from typical ferroelectric behavior in pure BaTiO3 to a highly diffusive and dispersive relaxor behavior from 10 to 40 mol% BiScO3. Several of the compositions showed high permittivities (approximately 1000) with low temperature coefficients of capacitance.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130548088","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693940
C. Lakeman, P. Fleig, J. T. Trainor, Mark A. Fuge
Wireless sensors provide solutions to otherwise intractable problems where it is impractical to deploy wired sensors. One of the biggest challenges facing wireless sensors is power. Advances in power management and battery technologies may soon enable three year life from primary batteries, but will require stringent control over sensor operation that, in many applications, will place unacceptable limits on the performance of parameters such as data rate or transmission range. Energy harvesting provides a solution to these problems, but tends to be limited by the inherent low and fluctuating level of ambient energy. In this presentation we will demonstrate a system that combines smart, ultra-low power charge management circuitry and electrochemical energy storage that is compatible with any energy harvesting technology. This building block is essential for realizing a power system that can replace batteries in end-user systems providing the benefits of energy harvesting technology while mitigating the drawbacks.
{"title":"Combining energy harvesting and power management for a complete wireless sensor power solution","authors":"C. Lakeman, P. Fleig, J. T. Trainor, Mark A. Fuge","doi":"10.1109/ISAF.2008.4693940","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693940","url":null,"abstract":"Wireless sensors provide solutions to otherwise intractable problems where it is impractical to deploy wired sensors. One of the biggest challenges facing wireless sensors is power. Advances in power management and battery technologies may soon enable three year life from primary batteries, but will require stringent control over sensor operation that, in many applications, will place unacceptable limits on the performance of parameters such as data rate or transmission range. Energy harvesting provides a solution to these problems, but tends to be limited by the inherent low and fluctuating level of ambient energy. In this presentation we will demonstrate a system that combines smart, ultra-low power charge management circuitry and electrochemical energy storage that is compatible with any energy harvesting technology. This building block is essential for realizing a power system that can replace batteries in end-user systems providing the benefits of energy harvesting technology while mitigating the drawbacks.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126819312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-12-02DOI: 10.1109/ISAF.2008.4693753
A. Giere, Y. Zheng, H. Maune, M. Sazegar, F. Paul, X. Zhou, J. Binder, S. Muller, R. Jakoby
This paper gives a short introduction into tunable dielectrics for microwave applications based on nematic liquid crystal and Barium-Strontium-Titanate (BST) thin- and thick-films. Due to their tuning voltage dependent electromagnetic properties, both are very promising material candidates for tunable passives in the microwave and millimeter-wave regions. For applications, such as frequency-agile communications and sensor systems we illustrate the challenges of optimization BST films based on a multi-scale view for material, processing, device and application design.
{"title":"Tunable dielectrics for microwave applications","authors":"A. Giere, Y. Zheng, H. Maune, M. Sazegar, F. Paul, X. Zhou, J. Binder, S. Muller, R. Jakoby","doi":"10.1109/ISAF.2008.4693753","DOIUrl":"https://doi.org/10.1109/ISAF.2008.4693753","url":null,"abstract":"This paper gives a short introduction into tunable dielectrics for microwave applications based on nematic liquid crystal and Barium-Strontium-Titanate (BST) thin- and thick-films. Due to their tuning voltage dependent electromagnetic properties, both are very promising material candidates for tunable passives in the microwave and millimeter-wave regions. For applications, such as frequency-agile communications and sensor systems we illustrate the challenges of optimization BST films based on a multi-scale view for material, processing, device and application design.","PeriodicalId":228914,"journal":{"name":"2008 17th IEEE International Symposium on the Applications of Ferroelectrics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129222533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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