Temperature Compensation Circuit for ISFET based pH Sensor

Neelu Tiwari, Pankaj Gupta
{"title":"Temperature Compensation Circuit for ISFET based pH Sensor","authors":"Neelu Tiwari, Pankaj Gupta","doi":"10.1109/SPIN52536.2021.9566148","DOIUrl":null,"url":null,"abstract":"The ion sensitive field effect transistor (ISFET) are being utilized in pH sensor technology to sense pH values. However, it is highly sensitive to temperature and may introduce variations in the output resulting into errors in the reading. This paper proposes a readout integrated circuit (ROIC) for temperature compensation of an ISFET based pH sensor. The resistor present in the bridge works as a thermistor and helps in stabilizing the output. The test circuit is simulated using LTSpice. The analysis is done for a temperature range of 0 − 50°C and pH range of 5.5 to 14 respectively. The performance analysis has been presented with four different type of sensing films i.e. SiO2, Al2O3, Ta2O3 and Si3N4. The proposed circuit gave optimum results, wherein a constant output voltage is achieved throughout the temperature range 0 − 50°C with sensitivity less than 56.33mV/pH. The proposed circuit has been briefly compared with the existing circuits.","PeriodicalId":343177,"journal":{"name":"2021 8th International Conference on Signal Processing and Integrated Networks (SPIN)","volume":"15 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 8th International Conference on Signal Processing and Integrated Networks (SPIN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPIN52536.2021.9566148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

The ion sensitive field effect transistor (ISFET) are being utilized in pH sensor technology to sense pH values. However, it is highly sensitive to temperature and may introduce variations in the output resulting into errors in the reading. This paper proposes a readout integrated circuit (ROIC) for temperature compensation of an ISFET based pH sensor. The resistor present in the bridge works as a thermistor and helps in stabilizing the output. The test circuit is simulated using LTSpice. The analysis is done for a temperature range of 0 − 50°C and pH range of 5.5 to 14 respectively. The performance analysis has been presented with four different type of sensing films i.e. SiO2, Al2O3, Ta2O3 and Si3N4. The proposed circuit gave optimum results, wherein a constant output voltage is achieved throughout the temperature range 0 − 50°C with sensitivity less than 56.33mV/pH. The proposed circuit has been briefly compared with the existing circuits.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于ISFET的pH传感器温度补偿电路
离子敏感场效应晶体管(ISFET)正被应用于pH传感器技术中来检测pH值。然而,它对温度高度敏感,可能会引入输出变化,导致读数误差。本文提出了一种用于ISFET pH传感器温度补偿的读出集成电路(ROIC)。电桥中的电阻作为热敏电阻工作,有助于稳定输出。使用LTSpice对测试电路进行了仿真。分析分别在0 - 50°C的温度范围和5.5至14的pH范围内完成。对SiO2、Al2O3、Ta2O3和Si3N4四种不同类型的传感膜进行了性能分析。所提出的电路给出了最佳结果,其中在整个温度范围0 - 50°C内实现恒定输出电压,灵敏度小于56.33mV/pH。提出的电路与现有的电路进行了简要的比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Temperature Compensation Circuit for ISFET based pH Sensor Knowledge Adaptation for Cross-Domain Opinion Mining Voltage Profile Enhancement of a 33 Bus System Integrated with Renewable Energy Sources and Electric Vehicle Power Quality Enhancement of Cascaded H Bridge 5 Level and 7 Level Inverters PIC simulation study of Beam Tunnel for W- Band high power Gyrotron
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1