{"title":"Modeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETs","authors":"N. Parihar, R. Tiwari, S. Mahapatra","doi":"10.1109/SISPAD.2018.8551740","DOIUrl":null,"url":null,"abstract":"Negative Bias Temperature Instability (NBTI) stress and recovery time kinetics fromReplacement Metal Gate (RMG) High-K Metal Gate (HKMG) p-channel FinFETs are measured and modeled. The impact of channel length (L) scaling on shift in threshold voltage ($\\mathrm{V}_{T})$,its power-law time exponent (n), Voltage Acceleration Factor (VAF) and Temperature (T) activation $( \\mathrm{E}_{A})$ is analyzed. TCAD and band structure calculations are utilized to explain the L dependence of experimental data.","PeriodicalId":170070,"journal":{"name":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"40 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2018.8551740","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
Negative Bias Temperature Instability (NBTI) stress and recovery time kinetics fromReplacement Metal Gate (RMG) High-K Metal Gate (HKMG) p-channel FinFETs are measured and modeled. The impact of channel length (L) scaling on shift in threshold voltage ($\mathrm{V}_{T})$,its power-law time exponent (n), Voltage Acceleration Factor (VAF) and Temperature (T) activation $( \mathrm{E}_{A})$ is analyzed. TCAD and band structure calculations are utilized to explain the L dependence of experimental data.
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