EPIC Via Last on SOI Wafer Integration Challenges

W. Loh, Qin Ren
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Abstract

In this paper, Through Silicon Via (TSV) of Silicon on isolator (SOI) platform on via last wafer integration challenges were evaluated. TSV profile at Buried Oxide (BOX) and bulk Silicon of SOI substrates undercut improvement was assessed. Electroplating (ECP) TSV wafer uniformity and its impact on Chemical Mechanical Polishing (CMP) was discussed. Improvement in Electroplating wafer uniformity has shown significant improvement in CMP remaining oxide uniformity.
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关于SOI晶圆集成挑战的最后一篇
本文对隔振器上硅(SOI)平台的通硅通孔(TSV)在通晶圆集成上面临的挑战进行了评估。评估了SOI衬底在埋藏氧化物(BOX)和大块硅处的TSV分布。讨论了电镀(ECP) TSV晶圆均匀性及其对化学机械抛光(CMP)的影响。电镀晶片均匀性的改善显著改善了CMP残留氧化物的均匀性。
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