Power generation of millimeter-wave diamond IMPATT diodes

Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Pub Date : 1989-08-07 DOI:10.1109/CORNEL.1989.79856

P.M. Mock, R. Trew

{"title":"Power generation of millimeter-wave diamond IMPATT diodes","authors":"P.M. Mock, R. Trew","doi":"10.1109/CORNEL.1989.79856","DOIUrl":null,"url":null,"abstract":"The results of a large-signal simulation of diamond IMPATT (impact avalanche and transit time) diodes are presented. The purpose of this investigation is to determine the potential of diamond IMPATTs as millimeter-wave power generators. This computer simulation is used to compare the performance of diamond IMPATTs with that of similar Si, GaAs, and InP devices. In addition, diamond IMPATT output power and power conversion efficiency are compared with experimental results on Si, GaAs and InP IMPATT and Gunn diodes. Thermal effects on the RF performance are investigated by means of an area-current-density plane analysis. The results indicate that diamond IMPATTs could produce power conversion efficiencies comparable to those of Si and GaAs. Due to their higher operating voltages and thermal conductivity, diamond IMPATTs could produce output power much greater than that of the other materials at frequencies below 100 GHz. At higher frequencies, diamond IMPATT performance is limited by its electrical properties and produces powers comparable to those of Si devices.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"367 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79856","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

Abstract

The results of a large-signal simulation of diamond IMPATT (impact avalanche and transit time) diodes are presented. The purpose of this investigation is to determine the potential of diamond IMPATTs as millimeter-wave power generators. This computer simulation is used to compare the performance of diamond IMPATTs with that of similar Si, GaAs, and InP devices. In addition, diamond IMPATT output power and power conversion efficiency are compared with experimental results on Si, GaAs and InP IMPATT and Gunn diodes. Thermal effects on the RF performance are investigated by means of an area-current-density plane analysis. The results indicate that diamond IMPATTs could produce power conversion efficiencies comparable to those of Si and GaAs. Due to their higher operating voltages and thermal conductivity, diamond IMPATTs could produce output power much greater than that of the other materials at frequencies below 100 GHz. At higher frequencies, diamond IMPATT performance is limited by its electrical properties and produces powers comparable to those of Si devices.<>

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毫米波金刚石IMPATT二极管的发电

本文介绍了金刚石冲击雪崩和传递时间二极管的大信号仿真结果。本研究的目的是确定金刚石IMPATTs作为毫米波发电机的潜力。该计算机模拟用于比较金刚石IMPATTs与类似Si, GaAs和InP器件的性能。此外，将金刚石IMPATT输出功率和功率转换效率与Si、GaAs和InP IMPATT和Gunn二极管的实验结果进行了比较。采用面积-电流-密度平面分析法研究了热效应对射频性能的影响。结果表明，金刚石IMPATTs可以产生与Si和GaAs相当的功率转换效率。由于其较高的工作电压和导热性，金刚石IMPATTs在低于100 GHz的频率下可以产生比其他材料大得多的输出功率。在更高的频率下，金刚石IMPATT的性能受到其电学特性的限制，产生的功率与硅器件相当。

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Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,

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