Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79816
A. Kleinsasser, T. Jackson
The authors consider the implications of inducing superconducting properties in the channel of a FET by using superconductors as the source and drain metallizations. Under some circumstances the semiconductor source and drain regions can themselves become superconducting due to the proximity effect, i.e. the penetration of Cooper pairs into normal material at the interface with a superconductor. The proximity-effect regions can overlap if the channel is short enough, making the device a Josephson weak link in which a gate controls both superconductive and normal currents. The authors review the basic device concept and electrical characteristics, discuss several important materials-related issues, examine the present experimental and theoretical situation, and discuss the potential for applications. They describe recent work on superconducting In/sub 0.47/Ga/sub 0.53/As JFETs (junction FETs) that addresses several of the issues raised by the present discussion.<>
{"title":"FETs with superconducting channels","authors":"A. Kleinsasser, T. Jackson","doi":"10.1109/CORNEL.1989.79816","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79816","url":null,"abstract":"The authors consider the implications of inducing superconducting properties in the channel of a FET by using superconductors as the source and drain metallizations. Under some circumstances the semiconductor source and drain regions can themselves become superconducting due to the proximity effect, i.e. the penetration of Cooper pairs into normal material at the interface with a superconductor. The proximity-effect regions can overlap if the channel is short enough, making the device a Josephson weak link in which a gate controls both superconductive and normal currents. The authors review the basic device concept and electrical characteristics, discuss several important materials-related issues, examine the present experimental and theoretical situation, and discuss the potential for applications. They describe recent work on superconducting In/sub 0.47/Ga/sub 0.53/As JFETs (junction FETs) that addresses several of the issues raised by the present discussion.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116620584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79851
S.D. Offsey, W. Schaff, P. Tasker, W. D. Braddock, L. Eastman
The authors have fabricated InGaAs-GaAs-AlGaAs strained-layer graded-index separate-confinement-heterostructure (GRINSCH) quantum-well lasers grown by molecular beam epitaxy (MBE). Use of optimized growth conditions resulted in low-threshold performance. The lasers emit at a wavelength of 1.03 mu m and have threshold currents of 12 mA for 3- mu m*400- mu m devices and threshold current densities of 168 A/cm/sup 2/ for 150- mu m*800- mu m devices. They emit at longer wavelengths and have lower threshold currents than previously reported strained-layer lasers grown by MBE and have threshold currents below those of strained-layer lasers grown by OMVPE (organometallic vapor-phase epitaxy). Measurements of threshold current and microwave modulation response have been performed on strained-layer InGaAs and unstrained GaAs GRINSCH SQW (single-quantum-well) lasers with identical cladding and graded regions grown by molecular beam epitaxy. They confirm the lower threshold currents and higher modulation bandwidths that have been theoretically predicted for strained-layer lasers.<>
作者利用分子束外延(MBE)制备了InGaAs-GaAs-AlGaAs应变层梯度折射率分离束缚异质结构(GRINSCH)量子阱激光器。使用优化的生长条件可获得低阈值性能。激光器发射波长为1.03 μ m, 3 μ m*400 μ m器件的阈值电流为12 mA, 150 μ m*800 μ m器件的阈值电流密度为168 a /cm/sup /。与先前报道的MBE生长的应变层激光器相比，它们发射波长更长，阈值电流更低，阈值电流低于OMVPE(有机金属气相外延)生长的应变层激光器。用分子束外延生长的梯度区和包层相同的应变层InGaAs和非应变GaAs GRINSCH SQW(单量子阱)激光器进行了阈值电流和微波调制响应的测量。他们证实了理论上对应变层激光器的较低阈值电流和较高调制带宽的预测。
{"title":"Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers","authors":"S.D. Offsey, W. Schaff, P. Tasker, W. D. Braddock, L. Eastman","doi":"10.1109/CORNEL.1989.79851","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79851","url":null,"abstract":"The authors have fabricated InGaAs-GaAs-AlGaAs strained-layer graded-index separate-confinement-heterostructure (GRINSCH) quantum-well lasers grown by molecular beam epitaxy (MBE). Use of optimized growth conditions resulted in low-threshold performance. The lasers emit at a wavelength of 1.03 mu m and have threshold currents of 12 mA for 3- mu m*400- mu m devices and threshold current densities of 168 A/cm/sup 2/ for 150- mu m*800- mu m devices. They emit at longer wavelengths and have lower threshold currents than previously reported strained-layer lasers grown by MBE and have threshold currents below those of strained-layer lasers grown by OMVPE (organometallic vapor-phase epitaxy). Measurements of threshold current and microwave modulation response have been performed on strained-layer InGaAs and unstrained GaAs GRINSCH SQW (single-quantum-well) lasers with identical cladding and graded regions grown by molecular beam epitaxy. They confirm the lower threshold currents and higher modulation bandwidths that have been theoretically predicted for strained-layer lasers.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122357383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79827
Y. Ando, T. Itoh
The authors have developed a 2DEGFET (two-dimensional-electron-gas field-effect transistor) noise model that includes accurate charge-control characteristics. It is based on analytical functions relating carrier concentration to Fermi level. Using this model, the influence of drain current, frequency and device parameters on NF (noise figure) was studied. The theory was found to explain the experimentally observed trend in NF behavior. The Fukui fitting factor deduced from this calculation agrees with typical experimental results. This agreement indicates that the present noise model is applicable to the design of 2DEGFETs and amplifiers.<>
{"title":"Noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge control characteristics","authors":"Y. Ando, T. Itoh","doi":"10.1109/CORNEL.1989.79827","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79827","url":null,"abstract":"The authors have developed a 2DEGFET (two-dimensional-electron-gas field-effect transistor) noise model that includes accurate charge-control characteristics. It is based on analytical functions relating carrier concentration to Fermi level. Using this model, the influence of drain current, frequency and device parameters on NF (noise figure) was studied. The theory was found to explain the experimentally observed trend in NF behavior. The Fukui fitting factor deduced from this calculation agrees with typical experimental results. This agreement indicates that the present noise model is applicable to the design of 2DEGFETs and amplifiers.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121962431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79831
N.L. Wang, N. Sheng, M. Chang, W. Ho, G. Sullivan, E. Sovero, J. Higgins, P. Asbeck
Excellent power performance from a common-emitter GaAlAs/GaAs HBT (heterojunction bipolar transistor) at 10 GHz is reported. Record high added efficiency of 67.8% and 11.6-dB associated gain were obtained, with 0.226-W output power. HBTs of various sizes were tested, and 55% added efficiency and 10-dB associated gain were obtained regularly. From the largest available device 0.63 W with 8-dB gain was obtained. The base current crowding effect does not appear in the HBTs tested. The operation of the HBT is analyzed and shown to be close to that of the class-B amplifier. The collector-current behavior with respect to the power level is explained. Harmonic content is found to be very low. Compared with other solid-state power devices at 10 GHz the HBT demonstrates the highest added efficiency and associated gain at high-output-power condition. In addition, the low HBT input Q factor eases broadband matching, making it the best candidate for microwave power application.<>
{"title":"High power efficiency X-band GaAlAs/GaAs HBT","authors":"N.L. Wang, N. Sheng, M. Chang, W. Ho, G. Sullivan, E. Sovero, J. Higgins, P. Asbeck","doi":"10.1109/CORNEL.1989.79831","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79831","url":null,"abstract":"Excellent power performance from a common-emitter GaAlAs/GaAs HBT (heterojunction bipolar transistor) at 10 GHz is reported. Record high added efficiency of 67.8% and 11.6-dB associated gain were obtained, with 0.226-W output power. HBTs of various sizes were tested, and 55% added efficiency and 10-dB associated gain were obtained regularly. From the largest available device 0.63 W with 8-dB gain was obtained. The base current crowding effect does not appear in the HBTs tested. The operation of the HBT is analyzed and shown to be close to that of the class-B amplifier. The collector-current behavior with respect to the power level is explained. Harmonic content is found to be very low. Compared with other solid-state power devices at 10 GHz the HBT demonstrates the highest added efficiency and associated gain at high-output-power condition. In addition, the low HBT input Q factor eases broadband matching, making it the best candidate for microwave power application.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132356428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79854
G. Feak, D. Nichols, J. Singh, J. Loehr, J. Pamulapati, P. Bhattacharya, D. Biswas
Results of calculations on how band-structure changes introduced by strain affect the gain spectra in multi-quantum-well (MQW) lasers are presented. Reduction of threshold injection as well as increased TE mode emission occurs for the compressive-strain case. In tensile strain the thresholds for TE and TM modes approach each other. Experimental studies on the compressive-strain laser structures show that the spontaneous and lasing spectra shift to longer wavelengths, the threshold current density is reduced, and a more rapid rise of gain with increased injection occurs. The output spectrum shifted from the 959-962 nm range for the GaInAs devices with 20% In to the 1033.5-1041.0-nm range for devices with 30% In. The threshold current density decreased with increasing strain, as expected from the theory. The modal gain of the devices and the peak modal gain were shown to rise very quickly with increased injection. This qualitatively agrees with the expected decrease in hole density of states brought about by strain, which could cause the hole states to be more rapidly filled and result in a more rapid rise in the material gain.<>
{"title":"The influence of strain on the small signal gain and lasing threshold of GaInAs/GaAs and GaAs/GaInAlAs strained-layer quantum well lasers","authors":"G. Feak, D. Nichols, J. Singh, J. Loehr, J. Pamulapati, P. Bhattacharya, D. Biswas","doi":"10.1109/CORNEL.1989.79854","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79854","url":null,"abstract":"Results of calculations on how band-structure changes introduced by strain affect the gain spectra in multi-quantum-well (MQW) lasers are presented. Reduction of threshold injection as well as increased TE mode emission occurs for the compressive-strain case. In tensile strain the thresholds for TE and TM modes approach each other. Experimental studies on the compressive-strain laser structures show that the spontaneous and lasing spectra shift to longer wavelengths, the threshold current density is reduced, and a more rapid rise of gain with increased injection occurs. The output spectrum shifted from the 959-962 nm range for the GaInAs devices with 20% In to the 1033.5-1041.0-nm range for devices with 30% In. The threshold current density decreased with increasing strain, as expected from the theory. The modal gain of the devices and the peak modal gain were shown to rise very quickly with increased injection. This qualitatively agrees with the expected decrease in hole density of states brought about by strain, which could cause the hole states to be more rapidly filled and result in a more rapid rise in the material gain.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134240056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79839
D. Stoneking, R. Trew, L. Mukundan
A simulator for calculating MESFET large-signal figures of merit and their sensitivities with respect to various device design, material and operational parameters has been developed. A study of an ion-implanted device with a 0.42- mu m gate length and 1.0-mm gate width is presented. The effects on maximum power-added efficiency, output power at the maximum power-added efficiency, and output power at 1-dB gain compression due to variation in implant peak doping density, implant range, implant straggle, gate length, gate width, and gate-drain breakdown voltage are presented. The data indicate that the device performance is most sensitive to changes in V/sub gdbd/ for values of V/sub gdbd/ less than 20 V. However, performance sensitivity goes to zero for V/sub gdbd/ greater than 20 V. RF performance is also sensitive to changes in the channel implant parameters. However, the simulated sensitivities are less than those for V/sub gdbd/. Over fairly broad ranges, device performance is less sensitive to changes in L/sub g/ and W/sub g/ but degrades rapidly at the extrema.<>
{"title":"Simulation of the variation and sensitivity of GaAs MESFET large signal figures-of-merit due to process, material, parasitic, and bias parameters","authors":"D. Stoneking, R. Trew, L. Mukundan","doi":"10.1109/CORNEL.1989.79839","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79839","url":null,"abstract":"A simulator for calculating MESFET large-signal figures of merit and their sensitivities with respect to various device design, material and operational parameters has been developed. A study of an ion-implanted device with a 0.42- mu m gate length and 1.0-mm gate width is presented. The effects on maximum power-added efficiency, output power at the maximum power-added efficiency, and output power at 1-dB gain compression due to variation in implant peak doping density, implant range, implant straggle, gate length, gate width, and gate-drain breakdown voltage are presented. The data indicate that the device performance is most sensitive to changes in V/sub gdbd/ for values of V/sub gdbd/ less than 20 V. However, performance sensitivity goes to zero for V/sub gdbd/ greater than 20 V. RF performance is also sensitive to changes in the channel implant parameters. However, the simulated sensitivities are less than those for V/sub gdbd/. Over fairly broad ranges, device performance is less sensitive to changes in L/sub g/ and W/sub g/ but degrades rapidly at the extrema.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131090361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79845
I. Saadat, J.P. Krusius
The characteristics of a new compound-semiconductor heterostructure tunneling resonator are analyzed using the time-dependent Schrodinger equation. The device is formed by imbedding the usual double-barrier tunneling structure between two additional heterojunctions forming the reflectors of the resonator. Tunable quantum mechanical oscillations in the frequency range from 300 to 600 GHz are observed for typical device parameters. Two potential millimeter-wave device applications are proposed.<>
{"title":"Analysis of resonant tunneling structures for high frequency oscillator applications via time-dependent solution of Schrodinger's equation","authors":"I. Saadat, J.P. Krusius","doi":"10.1109/CORNEL.1989.79845","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79845","url":null,"abstract":"The characteristics of a new compound-semiconductor heterostructure tunneling resonator are analyzed using the time-dependent Schrodinger equation. The device is formed by imbedding the usual double-barrier tunneling structure between two additional heterojunctions forming the reflectors of the resonator. Tunable quantum mechanical oscillations in the frequency range from 300 to 600 GHz are observed for typical device parameters. Two potential millimeter-wave device applications are proposed.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121633590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79826
G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito
State-of-the-art FET performance with f/sub t/'s of 55 and 61 GHz has been achieved using 0.5- mu m-gate In/sub 0.1/Ga/sub 0.9/As and graded In/sub x/Ga/sub 1-x/As MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In/sub 0.1/Ga/sub 0.9/As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.<>
{"title":"Mixed technology of ion implantation and heteroepitaxy: ion-implanted In/sub x/Ga/sub 1-x/As/GaAs MESFETs","authors":"G. Wang, M. Feng, R. Kaliski, Y. P. Liaw, C. Lau, C. Ito","doi":"10.1109/CORNEL.1989.79826","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79826","url":null,"abstract":"State-of-the-art FET performance with f/sub t/'s of 55 and 61 GHz has been achieved using 0.5- mu m-gate In/sub 0.1/Ga/sub 0.9/As and graded In/sub x/Ga/sub 1-x/As MESFETs, respectively. The material growth and device fabrication are described, and the device characteristics are reported. In comparison to the In/sub 0.1/Ga/sub 0.9/As MESFET, the graded-material MESFET shows a better Schottky gate, which is essential for device performance. This novel InGaAs MESFET is of interest for InGaAs-based circuits that are suitable, among other applications, for long-wavelength fiber-optic communication.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"53 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133871845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79848
J. Cooper, Y. Yin, M. Balzan, A.E. Geissberger
The authors describe experimental measurements and computer simulations of a semiconductor oscillator device which makes use of the contiguous domain effect in GaAs. This effect consists of the formation of a contiguous sequence of dipole domains in GaAs devices of appropriate electrostatic geometry. The contiguous domain oscillator is the first experimental realization of this effect. It is unique compared to other semiconductor oscillator devices in that it is not a transit-time device, does not act as a negative resistance, and does not require submicron physical dimensions to achieve high frequencies. Instead, it behaves as a microwave current source whose frequency is controlled by a DC voltage. It has the added advantage of being structurally compatible with planar ion-implanted GaAs MESFETs (or MODFETs) for use in millimeter-wave integrated circuits.<>
{"title":"Experimental verification of the contiguous domain oscillator concept","authors":"J. Cooper, Y. Yin, M. Balzan, A.E. Geissberger","doi":"10.1109/CORNEL.1989.79848","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79848","url":null,"abstract":"The authors describe experimental measurements and computer simulations of a semiconductor oscillator device which makes use of the contiguous domain effect in GaAs. This effect consists of the formation of a contiguous sequence of dipole domains in GaAs devices of appropriate electrostatic geometry. The contiguous domain oscillator is the first experimental realization of this effect. It is unique compared to other semiconductor oscillator devices in that it is not a transit-time device, does not act as a negative resistance, and does not require submicron physical dimensions to achieve high frequencies. Instead, it behaves as a microwave current source whose frequency is controlled by a DC voltage. It has the added advantage of being structurally compatible with planar ion-implanted GaAs MESFETs (or MODFETs) for use in millimeter-wave integrated circuits.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120949404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1989-08-07DOI: 10.1109/CORNEL.1989.79833
S. Tanaka, A. Furukawa, T. Baba, M. Madihian, M. Mizuta, K. Honjo
The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-f/sub T/ operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an f/sub T/-V/sub CE/ characteristic with a broad peak at around 2.2 V (V/sub BE/=1.0 V). It was found that the electron transit time t/sub B/+t/sub C/ is insensitive to external voltages. A realistic flat f/sub T/-V/sub CE/ characteristic can be obtained by reducing extrinsic delay time.<>
作者报告了AlInAs/InGaAs异质结双极晶体管(hbt)的制造和特性，该晶体管具有基极集电极结构，可在广泛的集电极偏置电压变化范围内实现高f/sub T/工作。由于逻辑摆幅的影响，器件的工作偏置点变化很大，这一特性为数字电路提供了高速开关性能。该器件具有f/sub T/-V/sub CE/特性，在2.2 V左右有宽峰(V/sub BE/=1.0 V)，电子传递时间T/ sub B/+ T/ sub C/对外部电压不敏感。通过减小外部延迟时间，可以得到一个真实的平坦的f/sub - T/-V/sub - CE/特性。
{"title":"Extension of high f/sub T/ operation bias range for an AlInAs/InGaAs HBT","authors":"S. Tanaka, A. Furukawa, T. Baba, M. Madihian, M. Mizuta, K. Honjo","doi":"10.1109/CORNEL.1989.79833","DOIUrl":"https://doi.org/10.1109/CORNEL.1989.79833","url":null,"abstract":"The authors report on the fabrication and characteristics of AlInAs/InGaAs HBTs (heterojunction bipolar transistors) with a base-collector structure that results in high-f/sub T/ operation over a wide range of collector bias voltage variation. This feature results in high-speed switching performance for digital circuits, where the device operating bias point varies widely due to logic swing. The fabricated device exhibited an f/sub T/-V/sub CE/ characteristic with a broad peak at around 2.2 V (V/sub BE/=1.0 V). It was found that the electron transit time t/sub B/+t/sub C/ is insensitive to external voltages. A realistic flat f/sub T/-V/sub CE/ characteristic can be obtained by reducing extrinsic delay time.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"419 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120866042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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