Zahed M. Khan, Tien K. Ng, U. Schwingenschlogl, B. Ooi
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引用次数: 0
Abstract
We present a rate equation model for the analysis of static and dynamic characteristics of InAs/InP quantum-dash (Qdash) semiconductor laser. The model is applied to calculate the differential modal gain (DMG) and linewidth enhancement factor (LEF) of the Qdash laser. In addition, the effect of varying the Qdash height on these dynamic parameters is evaluated. The model predicts a decrease in the differential modal gain with increase in the Qdash height while the LEF value generally does not get affected. The LEF and DMG of the Qdash laser at peak gain attain a value of ∼1–1.5 and ∼0.6×10−15 −1.0×10−15 cm2, respectively.
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