S. Lung, D. Lin, S. S. Chen, G. Weng, C. L. Liu, S. Lai, C. Tsai, T. B. Wu, Ru-Gun Liu
{"title":"Modularized low temperature LNO/PZT/LNO ferroelectric capacitor-over-interconnect (COI) FeRAM for advanced SOC (ASOC) application","authors":"S. Lung, D. Lin, S. S. Chen, G. Weng, C. L. Liu, S. Lai, C. Tsai, T. B. Wu, Ru-Gun Liu","doi":"10.1109/CICC.2002.1012882","DOIUrl":null,"url":null,"abstract":"Embedded FeRAM module is achieved by a low temperature capacitor-over-interconnect (COI) process. A conductive perovskite LaNiO/sub 3/ (LNO) bottom electrode is used as seed layer, the crystallization temperature of in-situ sputter deposited PZT is greatly reduced from 600/spl deg/C to 350 /spl deg/C/spl sim/400/spl deg/C LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. When LNO is used as top electrode of the ferroelectric capacitor, the fatigue performance is greatly improved. The COI LNO/PZT/LNO FeRAM structure achieved by this low temperature process is completely modular and is ideal for advanced Cu/low-K SOC application.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"311 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2002.1012882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Embedded FeRAM module is achieved by a low temperature capacitor-over-interconnect (COI) process. A conductive perovskite LaNiO/sub 3/ (LNO) bottom electrode is used as seed layer, the crystallization temperature of in-situ sputter deposited PZT is greatly reduced from 600/spl deg/C to 350 /spl deg/C/spl sim/400/spl deg/C LNO's near-perfect lattice match with PZT allows PZT to growth epitaxially at low temperature. When LNO is used as top electrode of the ferroelectric capacitor, the fatigue performance is greatly improved. The COI LNO/PZT/LNO FeRAM structure achieved by this low temperature process is completely modular and is ideal for advanced Cu/low-K SOC application.
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