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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)最新文献

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High speed, low power, optoelectronic InP-based HBT integrated circuits 高速,低功耗,光电基于inp的HBT集成电路
M. Sokolich
The next generation of fiber optic communication systems will require circuits operating at 50 GHz clock rates. InP-based Heterojunction Bipolar Transistors (HBTs) are ideally suited for the relatively low integration levels but high speed and low power required in optoelectronic transceivers. We review material, device and circuit issues related to InP HBT and the significant challenge that exists because communication system requirements are approaching the performance limits of high speed technologies.
下一代光纤通信系统将需要以50 GHz时钟速率运行的电路。基于inp的异质结双极晶体管(hbt)非常适合于相对低集成度但要求高速度和低功耗的光电收发器。我们回顾了与InP HBT相关的材料、器件和电路问题,以及由于通信系统要求接近高速技术的性能极限而存在的重大挑战。
{"title":"High speed, low power, optoelectronic InP-based HBT integrated circuits","authors":"M. Sokolich","doi":"10.1109/CICC.2002.1012883","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012883","url":null,"abstract":"The next generation of fiber optic communication systems will require circuits operating at 50 GHz clock rates. InP-based Heterojunction Bipolar Transistors (HBTs) are ideally suited for the relatively low integration levels but high speed and low power required in optoelectronic transceivers. We review material, device and circuit issues related to InP HBT and the significant challenge that exists because communication system requirements are approaching the performance limits of high speed technologies.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115236638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Dual mixer downconversion architecture using complex mixing signals: enabling solutions for software defined radios 使用复杂混频器信号的双混频器下变频架构:实现软件定义无线电的解决方案
T. Manku, C. Snyder, Michele Ting, Y. Ling, J. Khajehpour, Bill Kung, L. Wong
A dual mixer architecture using complex mixing functions to perform RF downconversion is described. This architecture eliminates the need for the image-reject and IF filters present in the heterodyne architecture, while achieving better LO leakage, 1/f noise. and second-order intercept performance than the direct conversion architecture. This architecture, implemented in a 1.8 V, 0.18 /spl mu/m CMOS process, achieves a maximum IIP2 of 85 dBm, a baseband 1/f noise corner frequency of less than 100 kHz, a LO-RF leakage equaling -138 dBm, and an operating frequency ranging from 400 MHz to 2.5 GHz.
描述了一种使用复杂混频器功能来执行RF下变频的双混频器架构。这种结构消除了外差结构中存在的图像抑制和中频滤波器的需要,同时实现了更好的LO泄漏和1/f噪声。并且二阶截距性能优于直接转换体系结构。该架构采用1.8 V、0.18 /spl mu/m CMOS工艺实现,最大IIP2为85 dBm,基带1/f噪声角频率小于100 kHz, LO-RF漏率为-138 dBm,工作频率范围为400 MHz至2.5 GHz。
{"title":"Dual mixer downconversion architecture using complex mixing signals: enabling solutions for software defined radios","authors":"T. Manku, C. Snyder, Michele Ting, Y. Ling, J. Khajehpour, Bill Kung, L. Wong","doi":"10.1109/CICC.2002.1012802","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012802","url":null,"abstract":"A dual mixer architecture using complex mixing functions to perform RF downconversion is described. This architecture eliminates the need for the image-reject and IF filters present in the heterodyne architecture, while achieving better LO leakage, 1/f noise. and second-order intercept performance than the direct conversion architecture. This architecture, implemented in a 1.8 V, 0.18 /spl mu/m CMOS process, achieves a maximum IIP2 of 85 dBm, a baseband 1/f noise corner frequency of less than 100 kHz, a LO-RF leakage equaling -138 dBm, and an operating frequency ranging from 400 MHz to 2.5 GHz.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115374839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A central office combined ADSL-VDSL line driver solution in .35/spl mu/m CMOS 一种在0.35 /spl μ m CMOS中结合ADSL-VDSL线路驱动方案
T. Piessens, M. Steyaert
A central office ADSL-VDSL line driver in a 0.35 /spl mu/m 3.3 V CMOS technology is presented. The chip has a missing tone power ratio (MTPR) over 55 dB driving ADSL signals and can deliver VDSL downstream signals with a bandwidth of 8.6 MHz and an out-of-band PSD of -103 dBm/Hz. The power efficiency is 47% for 100 mW ADSL signals with a crest factor of >5.
提出了一种采用0.35 /spl mu/m 3.3 V CMOS技术的中局ADSL-VDSL线路驱动器。该芯片驱动ADSL信号的缺音功率比(MTPR)超过55 dB,可以传输带宽为8.6 MHz的VDSL下行信号,带外PSD为-103 dBm/Hz。对于波峰系数>5的100mw ADSL信号,功率效率为47%。
{"title":"A central office combined ADSL-VDSL line driver solution in .35/spl mu/m CMOS","authors":"T. Piessens, M. Steyaert","doi":"10.1109/CICC.2002.1012763","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012763","url":null,"abstract":"A central office ADSL-VDSL line driver in a 0.35 /spl mu/m 3.3 V CMOS technology is presented. The chip has a missing tone power ratio (MTPR) over 55 dB driving ADSL signals and can deliver VDSL downstream signals with a bandwidth of 8.6 MHz and an out-of-band PSD of -103 dBm/Hz. The power efficiency is 47% for 100 mW ADSL signals with a crest factor of >5.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121071832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On-chip RF spiral inductors and bandpass filters using active magnetic energy recovery 片上射频螺旋电感和带通滤波器采用主动磁能回收
Yi-Cheng Wu, M. F. Chang
We present designs to achieve monolithic integration of high-Q spiral inductors and bandpass filters (BPFs) in standard CMOS technology. The designed transformer-type inductor behaves like an ideal inductor due to the active magnetic feedback from the secondary coil for compensating energy loss in the primary coil. This approach is compatible with mainstream IC technologies and has potential to achieve high-Q reactance with low power, low noise and high linearity. The fabricated inductors exhibit Q/spl sim/3000 between 1.5 to 2.1 GHz. The fabricated BPF shows 3 dB bandwidth of 120 MHz at 1.75 GHz with 3.1 dB in-band gain and 30 dB out-of-band rejection below 1.2 GHZ.
我们提出了在标准CMOS技术中实现高q螺旋电感器和带通滤波器(bpf)的单片集成的设计。所设计的变压器型电感由于二次线圈的有源磁反馈补偿了一次线圈的能量损失而表现为理想电感。该方法与主流IC技术兼容,具有实现低功耗、低噪声和高线性度的高q抗的潜力。制作的电感器在1.5至2.1 GHz之间显示Q/spl sim/3000。所制备的BPF在1.75 GHz时带宽为120mhz,带宽为3db,带内增益为3.1 dB,带外抑制为30db。
{"title":"On-chip RF spiral inductors and bandpass filters using active magnetic energy recovery","authors":"Yi-Cheng Wu, M. F. Chang","doi":"10.1109/CICC.2002.1012812","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012812","url":null,"abstract":"We present designs to achieve monolithic integration of high-Q spiral inductors and bandpass filters (BPFs) in standard CMOS technology. The designed transformer-type inductor behaves like an ideal inductor due to the active magnetic feedback from the secondary coil for compensating energy loss in the primary coil. This approach is compatible with mainstream IC technologies and has potential to achieve high-Q reactance with low power, low noise and high linearity. The fabricated inductors exhibit Q/spl sim/3000 between 1.5 to 2.1 GHz. The fabricated BPF shows 3 dB bandwidth of 120 MHz at 1.75 GHz with 3.1 dB in-band gain and 30 dB out-of-band rejection below 1.2 GHZ.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123648984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
The role of monolithic transmission lines in high-speed integrated circuits 单片传输线在高速集成电路中的作用
B. Razavi
This paper describes the role of transmission lines amenable to integration in VLSI technologies and their important circuit implications. First, an overview of microstrips, coplanar lines, and striplines is given and their performance limitations are quantified. Next, modeling and simulation issues are addressed and the role of transmission lines as circuit elements is discussed. Finally, examples of circuits that benefit from monolithic transmission lines are presented.
本文介绍了适合集成的传输线在VLSI技术中的作用及其重要的电路含义。首先,概述了微带线、共面线和带状线,并量化了它们的性能限制。接下来,建模和仿真问题得到解决,并讨论了传输线作为电路元件的作用。最后,给出了受益于单片传输线的电路实例。
{"title":"The role of monolithic transmission lines in high-speed integrated circuits","authors":"B. Razavi","doi":"10.1109/CICC.2002.1012845","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012845","url":null,"abstract":"This paper describes the role of transmission lines amenable to integration in VLSI technologies and their important circuit implications. First, an overview of microstrips, coplanar lines, and striplines is given and their performance limitations are quantified. Next, modeling and simulation issues are addressed and the role of transmission lines as circuit elements is discussed. Finally, examples of circuits that benefit from monolithic transmission lines are presented.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124343687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Technology trends and challenges for CMOS/system LSIs for the next 10-15 years 未来10-15年CMOS/系统lsi的技术趋势和挑战
S. Kawamura
There are many challenges which we will be facing in the next 10 to 15 years in developing a state-of-the-art CMOS technology for system LSIs. Among them, lithography, gate-stack, shallow junction and interconnect technologies are major ones. In this paper, these major challenges as well as "Design Crisis" and "Power Crisis" are discussed in detail from an ITRS (international Technology Roadmap for Semiconductors) perspective, and some potential solutions are described to overcome these challenges and crises.
在未来10到15年,我们将面临许多挑战,以开发最先进的CMOS技术用于系统lsi。其中,光刻技术、栅堆技术、浅结技术和互连技术是主要技术。本文从ITRS(国际半导体技术路线图)的角度详细讨论了这些主要挑战以及“设计危机”和“电源危机”,并描述了一些潜在的解决方案来克服这些挑战和危机。
{"title":"Technology trends and challenges for CMOS/system LSIs for the next 10-15 years","authors":"S. Kawamura","doi":"10.1109/CICC.2002.1012879","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012879","url":null,"abstract":"There are many challenges which we will be facing in the next 10 to 15 years in developing a state-of-the-art CMOS technology for system LSIs. Among them, lithography, gate-stack, shallow junction and interconnect technologies are major ones. In this paper, these major challenges as well as \"Design Crisis\" and \"Power Crisis\" are discussed in detail from an ITRS (international Technology Roadmap for Semiconductors) perspective, and some potential solutions are described to overcome these challenges and crises.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128006745","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sea of leads (SoL) characterization and design for compatibility with board-level optical waveguide interconnection 引线海(SoL)的特性和设计,以兼容板级光波导互连
M. Bakir, H. Reed, A. Mulé, P. Kohl, K. Martin, J. Meindl
Sea of leads (SoL) is a novel ultra-high-density compliant wafer-level packaging technology. The x-y-z compliant input/output (I/O) leads are batch fabricated by simply extending wafer-level batch fabrication of on-chip multilevel interconnect networks. Two-port microwave measurements reveal that the leads exhibit an insertion-loss of less than 0.4dB in the 0.1-45GHz frequency range. In addition, worst-case insertion-loss of signal propagation into and out of the package is 1.15dB at 45GHz. Because the compliant leads are short, their electrical parasitics are minimal. A mixed-signal system-on-a-chip (SoC) requires packages that are compatible with optical interconnect technology. Physical design rules describing SoL design compatibility with board-level optical signal distribution via waveguides are derived.
引线海(Sea of leads, SoL)是一种新型的超高密度兼容晶圆级封装技术。x-y-z兼容的输入/输出(I/O)引线是通过简单地扩展片上多层互连网络的晶圆级批量制造而批量制造的。双端口微波测量表明,引线在0.1-45GHz频率范围内的插入损耗小于0.4dB。此外,在45GHz时,信号传播进出封装的最坏情况插入损耗为1.15dB。由于柔性引线很短,它们的电寄生很小。混合信号片上系统(SoC)需要与光互连技术兼容的封装。物理设计规则描述了通过波导的板级光信号分布的SoL设计兼容性。
{"title":"Sea of leads (SoL) characterization and design for compatibility with board-level optical waveguide interconnection","authors":"M. Bakir, H. Reed, A. Mulé, P. Kohl, K. Martin, J. Meindl","doi":"10.1109/CICC.2002.1012885","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012885","url":null,"abstract":"Sea of leads (SoL) is a novel ultra-high-density compliant wafer-level packaging technology. The x-y-z compliant input/output (I/O) leads are batch fabricated by simply extending wafer-level batch fabrication of on-chip multilevel interconnect networks. Two-port microwave measurements reveal that the leads exhibit an insertion-loss of less than 0.4dB in the 0.1-45GHz frequency range. In addition, worst-case insertion-loss of signal propagation into and out of the package is 1.15dB at 45GHz. Because the compliant leads are short, their electrical parasitics are minimal. A mixed-signal system-on-a-chip (SoC) requires packages that are compatible with optical interconnect technology. Physical design rules describing SoL design compatibility with board-level optical signal distribution via waveguides are derived.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122241642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A single-chip MPEG-2 codec based on customizable media microprocessor 基于可定制媒体微处理器的单片MPEG-2编解码器
S. Ishiwata, T. Yamakage, Y. Tsuboi, T. Shimazawa, T. Kitazawa, Shuji Michinaka, Kunihiko Yahagi, Hideki Takeda, Akihiro Oue, T. Kodama, Nobu Matsumoto, Takayuki Kamei, T. Miyamori, G. Ootomo, M. Matsui
A single-chip MPEG2 MP@ML codec, integrating 3.8M gates on a 72mm/sup 2/ die, is described. It has a heterogeneous multiprocessor architecture in which six microprocessors with the same instruction set but different customization execute specific tasks such as video, audio etc. concurrently. The microprocessor, developed for digital media processing, provides various extensions such as a VLIW one and a DSP one inherent in its architecture. Making full use of the extensions, the chip executes encoding and decoding of video, audio and system concurrently in real time.
描述了一种单片MPEG2 MP@ML编解码器,该编解码器在72mm/sup /芯片上集成了3.8M门。它具有异构多处理器架构,其中六个具有相同指令集但不同定制的微处理器同时执行特定任务,如视频,音频等。为数字媒体处理而开发的微处理器,在其架构中提供了各种扩展,如VLIW扩展和DSP扩展。该芯片充分利用扩展,实现视频、音频和系统的实时并行编解码。
{"title":"A single-chip MPEG-2 codec based on customizable media microprocessor","authors":"S. Ishiwata, T. Yamakage, Y. Tsuboi, T. Shimazawa, T. Kitazawa, Shuji Michinaka, Kunihiko Yahagi, Hideki Takeda, Akihiro Oue, T. Kodama, Nobu Matsumoto, Takayuki Kamei, T. Miyamori, G. Ootomo, M. Matsui","doi":"10.1109/CICC.2002.1012789","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012789","url":null,"abstract":"A single-chip MPEG2 MP@ML codec, integrating 3.8M gates on a 72mm/sup 2/ die, is described. It has a heterogeneous multiprocessor architecture in which six microprocessors with the same instruction set but different customization execute specific tasks such as video, audio etc. concurrently. The microprocessor, developed for digital media processing, provides various extensions such as a VLIW one and a DSP one inherent in its architecture. Making full use of the extensions, the chip executes encoding and decoding of video, audio and system concurrently in real time.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132059772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
A vector DSP for imaging 矢量DSP成像
John Redford, Bret Bersack, M. Monk, Fred Huettig, D. Fitzgerald
The CW4011 is an SoC containing a DSP with a novel vector architecture. It exploits the parallelism and narrow data typical of image processing to gain high performance at a low cost and power. It contains eight 32-bit datapaths all working off of a single instruction. It can do 16 16-bit MACs/cycle, and also four 32-bit memory accesses per cycle to 128 KB of on-chip memory. It also contains a serial datapath for handling low-performance code and OS functions. The chip also includes memory, video, and IO interfaces on an industry-standard bus. it is built in 0.18 /spl mu/m CMOS technology, is 7.8 /spl times/ 6.8 mm, runs at 200 MHz (worst-case) and draws less than 500 mW. This gives the best cost-performance of any processor on the market for imaging applications.
CW4011是一个包含DSP的SoC,具有新颖的矢量架构。它利用图像处理的并行性和窄数据,以低成本和低功耗获得高性能。它包含8个32位的数据路径,全部由一条指令完成。它可以在一个周期内进行16个16位mac操作,每个周期还可以进行4个32位内存访问,以获得128 KB的片上内存。它还包含一个串行数据路径,用于处理低性能代码和操作系统函数。该芯片还包括存储器、视频和IO接口,采用工业标准总线。它采用0.18 /spl mu/m CMOS技术,频率为7.8 /spl / 6.8 mm,工作频率为200 MHz(最坏情况),功耗小于500 mW。这为成像应用提供了市场上任何处理器的最佳性价比。
{"title":"A vector DSP for imaging","authors":"John Redford, Bret Bersack, M. Monk, Fred Huettig, D. Fitzgerald","doi":"10.1109/CICC.2002.1012788","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012788","url":null,"abstract":"The CW4011 is an SoC containing a DSP with a novel vector architecture. It exploits the parallelism and narrow data typical of image processing to gain high performance at a low cost and power. It contains eight 32-bit datapaths all working off of a single instruction. It can do 16 16-bit MACs/cycle, and also four 32-bit memory accesses per cycle to 128 KB of on-chip memory. It also contains a serial datapath for handling low-performance code and OS functions. The chip also includes memory, video, and IO interfaces on an industry-standard bus. it is built in 0.18 /spl mu/m CMOS technology, is 7.8 /spl times/ 6.8 mm, runs at 200 MHz (worst-case) and draws less than 500 mW. This gives the best cost-performance of any processor on the market for imaging applications.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132327410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An interpolating sense circuit for molecular memory 分子记忆的插值感测电路
Y. Nishida, Wentai Liu
Presented herein is a novel sensing circuit for multistate molecular memory technologies. The circuit employs an interpolating sensing scheme to achieve low power dissipation and high speed sensing of molecular memory cells. A novel "reference level offset reduction" circuit technique is used to reduce the current thresholder's offset to nearly zero. Our interpolating sensing circuit consists of two sense amplifiers and two interpolators. At 2.5 V, the total current for the amplifiers and interpolators is 587 /spl mu/A and 161 /spl mu/A, respectively. The sense circuit exhibits an overall rise time of 41 ns and fall time of 56 ns in TSMC 0.25-/spl mu/m process.
本文提出了一种新的多态分子记忆传感电路。该电路采用内插式传感方案,实现了对分子记忆细胞的低功耗和高速传感。采用一种新颖的“基准电平偏置减小”电路技术,将电流阈值的偏置减小到接近于零。我们的插值传感电路由两个检测放大器和两个插值器组成。在2.5 V时,放大器和插补器的总电流分别为587 /spl mu/A和161 /spl mu/A。在TSMC 0.25-/spl mu/m工艺下,传感电路的整体上升时间为41 ns,下降时间为56 ns。
{"title":"An interpolating sense circuit for molecular memory","authors":"Y. Nishida, Wentai Liu","doi":"10.1109/CICC.2002.1012776","DOIUrl":"https://doi.org/10.1109/CICC.2002.1012776","url":null,"abstract":"Presented herein is a novel sensing circuit for multistate molecular memory technologies. The circuit employs an interpolating sensing scheme to achieve low power dissipation and high speed sensing of molecular memory cells. A novel \"reference level offset reduction\" circuit technique is used to reduce the current thresholder's offset to nearly zero. Our interpolating sensing circuit consists of two sense amplifiers and two interpolators. At 2.5 V, the total current for the amplifiers and interpolators is 587 /spl mu/A and 161 /spl mu/A, respectively. The sense circuit exhibits an overall rise time of 41 ns and fall time of 56 ns in TSMC 0.25-/spl mu/m process.","PeriodicalId":209025,"journal":{"name":"Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129981582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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Proceedings of the IEEE 2002 Custom Integrated Circuits Conference (Cat. No.02CH37285)
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