E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber
{"title":"Analysis of FinFET technology on memories","authors":"E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber","doi":"10.1109/IOLTS.2012.6313866","DOIUrl":null,"url":null,"abstract":"Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2012.6313866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
