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2012 IEEE 18th International On-Line Testing Symposium (IOLTS)最新文献

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An efficient probability framework for error propagation and correlation estimation 一种有效的误差传播和相关估计的概率框架
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313867
Liang Chen, M. Tahoori
Soft error is becoming one of the major reliability concerns with continuously shrinking transistor size. Low level transient events may result in multiple correlated bit flips at high level. Considering this correlation effect is essential for accurate error rate estimation and efficient error mitigation. This paper proposes a novel framework to address this correlation issue at logic level. Based on the concept of error propagation function, graph transformation techniques are utilized to convert the error probability and correlation problem into the computation of signal probability and correlation. The experimental results show that compared with Monte-Carlo simulation, our approach is 72× faster, while the average inaccuracy of error probability estimation is below 0.006.
随着晶体管尺寸的不断缩小,软误差正成为主要的可靠性问题之一。低电平瞬态事件可能导致高电平多个相关位翻转。考虑这种相关效应对于准确估计错误率和有效降低错误率至关重要。本文提出了一种新的框架来解决逻辑层面的相关问题。基于误差传播函数的概念,利用图变换技术将误差概率和相关问题转化为信号概率和相关问题的计算。实验结果表明,与蒙特卡罗模拟相比,我们的方法速度提高了72倍,而误差概率估计的平均不准确性低于0.006。
{"title":"An efficient probability framework for error propagation and correlation estimation","authors":"Liang Chen, M. Tahoori","doi":"10.1109/IOLTS.2012.6313867","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313867","url":null,"abstract":"Soft error is becoming one of the major reliability concerns with continuously shrinking transistor size. Low level transient events may result in multiple correlated bit flips at high level. Considering this correlation effect is essential for accurate error rate estimation and efficient error mitigation. This paper proposes a novel framework to address this correlation issue at logic level. Based on the concept of error propagation function, graph transformation techniques are utilized to convert the error probability and correlation problem into the computation of signal probability and correlation. The experimental results show that compared with Monte-Carlo simulation, our approach is 72× faster, while the average inaccuracy of error probability estimation is below 0.006.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125809874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
SEU-X: A SEu un-excitability prover for SRAM-FPGAs SEu - x:用于sram - fpga的SEu非兴奋性证明器
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313836
C. Bernardeschi, Luca Cassano, A. Domenici
We propose an un-excitability prover for Single Event Upset (SEU) faults affecting the configuration memory of logic resources of SRAM-FPGA systems. In particular, we focus on the subset of untestable faults that cannot even be excited, with the aim of optimizing the generation of test patterns, in particular for in-service testing. SEUs in configuration bits of the logic resources actually used by the system are addressed. This makes our fault model much more accurate than the classical stuck-at fault model. The tool relies on the SAL specification language for the modeling of netlists, and on the SAL model checker for the proof of the un-excitability of faults. Results from the application of the tool to some circuits from the ISCAS and ITC benchmarks are reported.
针对影响SRAM-FPGA系统逻辑资源组态存储器的单事件扰动(SEU)故障,提出了一种非兴奋性证明。特别是,我们将重点放在无法测试的故障子集上,这些故障甚至不能被激发,其目的是优化测试模式的生成,特别是在服务测试中。系统实际使用的逻辑资源的配置位中的seu被寻址。这使得我们的断层模型比经典的卡在断层模型要精确得多。该工具依赖于SAL规范语言对网络列表进行建模,并依赖于SAL模型检查器对故障的非激励性进行证明。报告了该工具在ISCAS和ITC基准电路中的应用结果。
{"title":"SEU-X: A SEu un-excitability prover for SRAM-FPGAs","authors":"C. Bernardeschi, Luca Cassano, A. Domenici","doi":"10.1109/IOLTS.2012.6313836","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313836","url":null,"abstract":"We propose an un-excitability prover for Single Event Upset (SEU) faults affecting the configuration memory of logic resources of SRAM-FPGA systems. In particular, we focus on the subset of untestable faults that cannot even be excited, with the aim of optimizing the generation of test patterns, in particular for in-service testing. SEUs in configuration bits of the logic resources actually used by the system are addressed. This makes our fault model much more accurate than the classical stuck-at fault model. The tool relies on the SAL specification language for the modeling of netlists, and on the SAL model checker for the proof of the un-excitability of faults. Results from the application of the tool to some circuits from the ISCAS and ITC benchmarks are reported.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125437553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Functional level embedded self testing for Walsh transform based adaptive hardware 基于Walsh变换的自适应硬件的功能级嵌入式自测试
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313857
A. Burg, O. Keren
The paper presents an embedded self test circuit for adaptive systems whose exact specification is unknown. In particular, a functional testing mechanism for systems that have an acceptable representation as polynomials of low order is introduced. The testing mechanism is based on linear-checks and is suitable for Walsh transform based architectures. The paper shows that it is possible to define a small set of linear-checks which does not depend on the actual functionality that the hardware has converged to. Moreover, the check-set can be defined even without knowing the number of input variables nor their precision. In addition, the implementation cost of this testing scheme is negligible in respect to the cost of overall system.
本文提出了一种嵌入式自适应系统自检测电路,该电路的具体规格不详。特别地,对具有可接受的低阶多项式表示的系统,介绍了一种功能测试机制。该测试机制基于线性检查,适用于基于Walsh变换的体系结构。本文表明,可以定义一组不依赖于硬件收敛到的实际功能的小线性检查。此外,即使不知道输入变量的数量及其精度,也可以定义检查集。此外,该测试方案的实施成本相对于整个系统的成本可以忽略不计。
{"title":"Functional level embedded self testing for Walsh transform based adaptive hardware","authors":"A. Burg, O. Keren","doi":"10.1109/IOLTS.2012.6313857","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313857","url":null,"abstract":"The paper presents an embedded self test circuit for adaptive systems whose exact specification is unknown. In particular, a functional testing mechanism for systems that have an acceptable representation as polynomials of low order is introduced. The testing mechanism is based on linear-checks and is suitable for Walsh transform based architectures. The paper shows that it is possible to define a small set of linear-checks which does not depend on the actual functionality that the hardware has converged to. Moreover, the check-set can be defined even without knowing the number of input variables nor their precision. In addition, the implementation cost of this testing scheme is negligible in respect to the cost of overall system.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132011871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Stream cipher hash based execution monitoring (SCHEM) framework for intrusion detection on embedded processors 基于流密码哈希的嵌入式处理器入侵检测执行监控框架
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313864
A. Chaudhari, J. Abraham
Hardware based execution monitoring of applications holds the promise for an effective and tamper-proof solution for intrusion detection on processor. This paper presents a practical hardware based intrusion detection framework which uses stream cipher based hashing techniques for runtime control flow and instruction integrity monitoring. This framework enables accurate monitoring of the control flow of a process with an instruction level granularity. Additional hardware required for implementation of our framework has very low power and area overheads which makes it possible to practically implement execution monitoring even on embedded processors. Our technique achieves an order of magnitude lower power overhead compared to other similar techniques. Furthermore, our implementation of the developed framework has a low intrusion detection latency, which enables us to verify the control flow integrity of the executing code before the violating control flow instructions are retired from the processor pipeline.
基于硬件的应用程序执行监控有望为处理器上的入侵检测提供有效且防篡改的解决方案。本文提出了一种实用的基于硬件的入侵检测框架,该框架采用基于流密码的哈希技术进行运行时控制流和指令完整性监控。该框架支持对具有指令级粒度的流程的控制流进行精确监控。实现我们的框架所需的额外硬件具有非常低的功耗和面积开销,这使得即使在嵌入式处理器上也可以实际实现执行监视。与其他类似技术相比,我们的技术实现了一个数量级的低功耗开销。此外,我们开发的框架的实现具有较低的入侵检测延迟,这使我们能够在违反控制流指令从处理器管道中退役之前验证执行代码的控制流完整性。
{"title":"Stream cipher hash based execution monitoring (SCHEM) framework for intrusion detection on embedded processors","authors":"A. Chaudhari, J. Abraham","doi":"10.1109/IOLTS.2012.6313864","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313864","url":null,"abstract":"Hardware based execution monitoring of applications holds the promise for an effective and tamper-proof solution for intrusion detection on processor. This paper presents a practical hardware based intrusion detection framework which uses stream cipher based hashing techniques for runtime control flow and instruction integrity monitoring. This framework enables accurate monitoring of the control flow of a process with an instruction level granularity. Additional hardware required for implementation of our framework has very low power and area overheads which makes it possible to practically implement execution monitoring even on embedded processors. Our technique achieves an order of magnitude lower power overhead compared to other similar techniques. Furthermore, our implementation of the developed framework has a low intrusion detection latency, which enables us to verify the control flow integrity of the executing code before the violating control flow instructions are retired from the processor pipeline.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131468262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evaluation of test algorithms stress effect on SRAMs under neutron radiation 中子辐射下测试算法对sram应力效应的评价
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313853
G. Tsiligiannis, L. Dilillo, A. Bosio, P. Girard, A. Todri, A. Virazel, A. Touboul, F. Wrobel, F. Saigné
Electronic system reliability over soft errors is very critical as the transistor size shrinks. Many recent works have defined the device error rate under radiation for SRAMs in hold mode (static) and during operation (dynamic). This paper evaluates the impact of running test algorithms on SRAMs exposed to neutron radiation in order to define their stressing factor. The results that we show are based on experiments performed at the TSL facility in Uppsala, Sweden using a Quasi-Monoenergetic neutron beam. The evaluation of the test algorithms is based on the calculated device SEU cross section.
随着晶体管尺寸的缩小,电子系统对软误差的可靠性是非常关键的。最近的许多工作已经定义了sram在保持模式(静态)和运行状态(动态)下的辐射误差率。本文评估了运行测试算法对中子辐射下sram的影响,以确定sram的应力因子。我们展示的结果是基于在瑞典乌普萨拉的TSL设施使用准单能中子束进行的实验。测试算法的评估是基于计算出的设备SEU截面。
{"title":"Evaluation of test algorithms stress effect on SRAMs under neutron radiation","authors":"G. Tsiligiannis, L. Dilillo, A. Bosio, P. Girard, A. Todri, A. Virazel, A. Touboul, F. Wrobel, F. Saigné","doi":"10.1109/IOLTS.2012.6313853","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313853","url":null,"abstract":"Electronic system reliability over soft errors is very critical as the transistor size shrinks. Many recent works have defined the device error rate under radiation for SRAMs in hold mode (static) and during operation (dynamic). This paper evaluates the impact of running test algorithms on SRAMs exposed to neutron radiation in order to define their stressing factor. The results that we show are based on experiments performed at the TSL facility in Uppsala, Sweden using a Quasi-Monoenergetic neutron beam. The evaluation of the test algorithms is based on the calculated device SEU cross section.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117294230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Analysis of FinFET technology on memories 存储器中的FinFET技术分析
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313866
E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber
Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.
只提供摘要形式。由于泄漏电流和可变性的增加,传统的体块技术已经达到了极限,必须找到一些替代方案。finfet就是其中一种选择。通过它们的三维结构,它们实现了更好的通道控制,这是可扩展性的关键。然而,一些可变性的来源仍然存在。这项工作分析了这种技术转变对SRAM和DRAM存储器的影响。
{"title":"Analysis of FinFET technology on memories","authors":"E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber","doi":"10.1109/IOLTS.2012.6313866","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313866","url":null,"abstract":"Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114070096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fault missing rate analysis of the arithmetic residue codes based fault-tolerant FIR filter design 基于算术剩余码的错误率分析的容错FIR滤波器设计
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313856
Zhen Gao, Wenhui Yang, Xiang Chen, Ming Zhao, Jing Wang
Relative to the Triple Modular Redundancy (TMR) scheme, the arithmetic residue codes based fault-tolerant DSP design consumes much less resources. However, the price for the low resource consumption is the fault missing problem. The basic tradeoff is that, smaller modulus used for the fault checking consumes fewer resources, but the fault missing rate is higher. The relationship between the value of modulus and the fault missing rate is analyzed theoretically in this paper for fault-tolerant FIR filter design, and the results are verified by FPGA implemented fault injections.
相对于三模冗余(TMR)方案,基于算术剩余码的容错DSP设计消耗的资源更少。然而,低资源消耗的代价是故障缺失问题。基本的权衡是,用于故障检查的模量越小,消耗的资源越少,但故障缺陷率越高。本文从理论上分析了模数值与故障缺失率之间的关系,用于容错FIR滤波器的设计,并通过FPGA实现故障注入对结果进行了验证。
{"title":"Fault missing rate analysis of the arithmetic residue codes based fault-tolerant FIR filter design","authors":"Zhen Gao, Wenhui Yang, Xiang Chen, Ming Zhao, Jing Wang","doi":"10.1109/IOLTS.2012.6313856","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313856","url":null,"abstract":"Relative to the Triple Modular Redundancy (TMR) scheme, the arithmetic residue codes based fault-tolerant DSP design consumes much less resources. However, the price for the low resource consumption is the fault missing problem. The basic tradeoff is that, smaller modulus used for the fault checking consumes fewer resources, but the fault missing rate is higher. The relationship between the value of modulus and the fault missing rate is analyzed theoretically in this paper for fault-tolerant FIR filter design, and the results are verified by FPGA implemented fault injections.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 50
RIIF - Reliability information interchange format RIIF—可靠性信息交换格式
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313849
A. Evans, M. Nicolaidis, Shi-Jie Wen, D. Alexandrescu, Enrico Costenaro
In this paper, a new standard language called RIIF (Reliability Information Interchange Format) is defined which enables designers to specify the failure characteristics and reliability requirements for simple and complex components. This language enables EDA tools to analyze reliability models and to compute the failure rates for complex systems. A formal language makes it possible for suppliers and consumers to exchange reliability information in a consistent fashion and to use this information to build accurate reliability models. The RIIF language is a general purpose reliability modeling language and is not tied to a specific application domain or implementation technology.
本文定义了一种新的标准语言RIIF(可靠性信息交换格式),使设计人员能够指定简单和复杂部件的失效特征和可靠性要求。这种语言使EDA工具能够分析可靠性模型并计算复杂系统的故障率。正式语言使供应商和消费者能够以一致的方式交换可靠性信息,并使用这些信息来构建准确的可靠性模型。RIIF语言是一种通用的可靠性建模语言,与特定的应用领域或实现技术无关。
{"title":"RIIF - Reliability information interchange format","authors":"A. Evans, M. Nicolaidis, Shi-Jie Wen, D. Alexandrescu, Enrico Costenaro","doi":"10.1109/IOLTS.2012.6313849","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313849","url":null,"abstract":"In this paper, a new standard language called RIIF (Reliability Information Interchange Format) is defined which enables designers to specify the failure characteristics and reliability requirements for simple and complex components. This language enables EDA tools to analyze reliability models and to compute the failure rates for complex systems. A formal language makes it possible for suppliers and consumers to exchange reliability information in a consistent fashion and to use this information to build accurate reliability models. The RIIF language is a general purpose reliability modeling language and is not tied to a specific application domain or implementation technology.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131197801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Towards optimized functional evaluation of SEE-induced failures in complex designs 面向复杂设计中see诱发失效的优化功能评估
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313869
D. Alexandrescu, Enrico Costenaro
Single Event Effects strongly impact the reliability of electronic circuits and systems, requiring careful SER characterization and adequately sized mitigation strategy. The SER study aims at providing relevant information about the circuit behavior in the specified working environment, in terms of Functional Failures rates, criticality and so on. Ultimately, the error mitigation efforts are directed at improving the function of the circuit in the presence of SEE by either reducing the failure occurrence rate or the failure impact. However, when dealing with SEEs affecting highly sophisticated electronic designs, functional issues are one of the most complex aspects to reliably characterize. This paper aims at proposing and evaluating several fault characterization techniques, meant to approximate the functional failures induced by Single Event Upsets in complex circuits, very early in the design flow. The two main contributions of our efforts consist in a differential fault simulation approach based on standard simulation tools and a novel parallel, SEE-optimized, stand-alone simulation tool. Both methods accurately evaluate the immediate propagation of SEE-induced faults and predict the long-term behavior of the faulty circuit running a specified application. The works described in this paper also benefit from various optimization techniques targeting lower simulation costs (in terms of CPU and man-power) while preserving the accuracy of the results. Ultimately, the results of each method compare positively with reference data obtained from an exhaustive fault simulation campaign. This encouraging outcome suggests that we can reliably obtain highly informative functional error information while spending reasonable resources (CPU, man-power, time).
单事件效应强烈影响电子电路和系统的可靠性,需要仔细的SER表征和适当规模的缓解策略。SER研究旨在提供电路在特定工作环境下的相关信息,如功能故障率、临界性等。最终,减少错误的努力是通过降低故障发生率或故障影响来改善电路在SEE存在下的功能。然而,当处理影响高度复杂电子设计的see时,功能问题是最复杂的方面之一,难以可靠地表征。本文旨在提出和评估几种故障表征技术,旨在在设计流程的早期近似复杂电路中由单事件中断引起的功能故障。我们的两个主要贡献包括基于标准仿真工具的差分故障仿真方法和一种新的并行的、优化的、独立的仿真工具。这两种方法都能准确地评估see引起的故障的即时传播,并预测故障电路运行特定应用的长期行为。本文中描述的工作还受益于各种优化技术,旨在降低模拟成本(在CPU和人力方面),同时保持结果的准确性。最后,每种方法的结果都与从详尽故障模拟活动中获得的参考数据进行了正面比较。这一令人鼓舞的结果表明,在花费合理的资源(CPU、人力和时间)的同时,我们可以可靠地获得信息丰富的功能错误信息。
{"title":"Towards optimized functional evaluation of SEE-induced failures in complex designs","authors":"D. Alexandrescu, Enrico Costenaro","doi":"10.1109/IOLTS.2012.6313869","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313869","url":null,"abstract":"Single Event Effects strongly impact the reliability of electronic circuits and systems, requiring careful SER characterization and adequately sized mitigation strategy. The SER study aims at providing relevant information about the circuit behavior in the specified working environment, in terms of Functional Failures rates, criticality and so on. Ultimately, the error mitigation efforts are directed at improving the function of the circuit in the presence of SEE by either reducing the failure occurrence rate or the failure impact. However, when dealing with SEEs affecting highly sophisticated electronic designs, functional issues are one of the most complex aspects to reliably characterize. This paper aims at proposing and evaluating several fault characterization techniques, meant to approximate the functional failures induced by Single Event Upsets in complex circuits, very early in the design flow. The two main contributions of our efforts consist in a differential fault simulation approach based on standard simulation tools and a novel parallel, SEE-optimized, stand-alone simulation tool. Both methods accurately evaluate the immediate propagation of SEE-induced faults and predict the long-term behavior of the faulty circuit running a specified application. The works described in this paper also benefit from various optimization techniques targeting lower simulation costs (in terms of CPU and man-power) while preserving the accuracy of the results. Ultimately, the results of each method compare positively with reference data obtained from an exhaustive fault simulation campaign. This encouraging outcome suggests that we can reliably obtain highly informative functional error information while spending reasonable resources (CPU, man-power, time).","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126529173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A fault attack robust TRNG 故障攻击稳健TRNG
Pub Date : 2012-06-27 DOI: 10.1109/IOLTS.2012.6313851
E. Böhl, Markus Ihle
True random number generators (TRNGs) are used for cryptographic operations. By the use of TRNGs secret keys can be generated and the design can be made robust against attacks. In order to simplify further attacks the adversary tries to introduce some bias in the probability distribution of the TRNG output. A possibility to detect such attacks is shown in this paper. In difference to the most former publications all investigations are performed taking into account realistic technology parameters and parasitics.
真随机数生成器(trng)用于加密操作。通过使用trng,可以生成密钥,使设计具有抗攻击的鲁棒性。为了简化进一步的攻击,攻击者试图在TRNG输出的概率分布中引入一些偏差。本文给出了一种检测此类攻击的可能性。与大多数以前的出版物不同,所有的调查都考虑到现实的技术参数和寄生虫。
{"title":"A fault attack robust TRNG","authors":"E. Böhl, Markus Ihle","doi":"10.1109/IOLTS.2012.6313851","DOIUrl":"https://doi.org/10.1109/IOLTS.2012.6313851","url":null,"abstract":"True random number generators (TRNGs) are used for cryptographic operations. By the use of TRNGs secret keys can be generated and the design can be made robust against attacks. In order to simplify further attacks the adversary tries to introduce some bias in the probability distribution of the TRNG output. A possibility to detect such attacks is shown in this paper. In difference to the most former publications all investigations are performed taking into account realistic technology parameters and parasitics.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130410770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
期刊
2012 IEEE 18th International On-Line Testing Symposium (IOLTS)
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