Comparative Analysis of Dual-edge Triggered and Sense Amplifier Based Flip-flops in 32 nm CMOS Regime

O. Shah, Shivangi Bansal, Prashant Kumar Mavi, A. Yadav, Satvik Vats, Zaiba Ishrat
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Abstract

The article summarizes the outcomes of extensive research carried out on dual-edge triggered flip-flops (DETFFs) and sense amplifier based flip-flops (SAFFs) in relation to their power consumption, delay measurements and area requirements. The research focused on four of the most advanced flip-flops (FFs) currently available, and simulations were conducted in SPICE using 32 nm CMOS technology. The results showed that Lee's FF had better power efficiency at data activities of greater than 25% whereas Lapshev's FF could be used for circuits with less data activity. Jeong's FF had better speed efficiency at higher voltages. Lee's FF also had the best power delay product (PDP) followed closely by Jeong's FF at nominal conditions. Additionally, Jeong's FF outperformed other designs in terms of area overhead.
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基于32纳米CMOS器件的双边缘触发触发器和感测放大器的比较分析
本文总结了对双边触发触发器(detff)和基于感测放大器的触发器(sfs)在功耗、延迟测量和面积要求方面进行的广泛研究的结果。该研究集中在目前可用的四种最先进的触发器(ff)上,并使用32纳米CMOS技术在SPICE中进行了模拟。结果表明,Lee的FF在数据活动中具有更好的功率效率,大于25%,而Lapshev的FF可用于数据活动较少的电路。Jeong的FF在更高的电压下具有更好的速度效率。在标称条件下,Lee的FF也具有最佳的功率延迟积(PDP),其次是Jeong的FF。此外,Jeong的FF在面积开销方面优于其他设计。
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