{"title":"A Simple Model for Channel Noise of Deep Submicron MOSFETs","authors":"Z. Lu, Y. Ye","doi":"10.1109/EDSSC.2005.1635269","DOIUrl":null,"url":null,"abstract":"A simple analytical model of MOSFETs channel noise is presented by considering short-channel effect of deep submicron MOSFETs, such as mobility degradation, channel length modulation. The model is explicit functions of MOSFETs geometry and biasing conditions, and hence is useful for circuit design purposes. Simulating results derived by using different channel noise model are compared and discussed.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635269","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A simple analytical model of MOSFETs channel noise is presented by considering short-channel effect of deep submicron MOSFETs, such as mobility degradation, channel length modulation. The model is explicit functions of MOSFETs geometry and biasing conditions, and hence is useful for circuit design purposes. Simulating results derived by using different channel noise model are compared and discussed.
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