Ridge-waveguide InAs/GaAs lasers

L. Kuna, F. Uherek, J. Kovác, J. Jakabovic, V. Gottschalch, B. Rheinlander
{"title":"Ridge-waveguide InAs/GaAs lasers","authors":"L. Kuna, F. Uherek, J. Kovác, J. Jakabovic, V. Gottschalch, B. Rheinlander","doi":"10.1109/ASDAM.2000.889464","DOIUrl":null,"url":null,"abstract":"We report on the reduction of current spreading of InAs/GaAs lasers by using ridge-waveguide geometry. For the investigation of current spreading, lasers with various ridge widths 5, 10, 20 and 50 /spl mu/m are prepared. The laser properties are experimentally studied by the light output versus current characteristics (L-I) and near field patterns (NFP). Threshold current densities (J/sub th/) as a function of ridge width are compared to oxide-stripe geometry lasers with the same material structure. Finally, lasers with ridge-waveguide geometry show a reduction of total J/sub th/ for all ridge widths. Furthermore, the fundamental zero-order mode TEM/sub 00/ is achieved for 10 /spl mu/m ridge width.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"133 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889464","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We report on the reduction of current spreading of InAs/GaAs lasers by using ridge-waveguide geometry. For the investigation of current spreading, lasers with various ridge widths 5, 10, 20 and 50 /spl mu/m are prepared. The laser properties are experimentally studied by the light output versus current characteristics (L-I) and near field patterns (NFP). Threshold current densities (J/sub th/) as a function of ridge width are compared to oxide-stripe geometry lasers with the same material structure. Finally, lasers with ridge-waveguide geometry show a reduction of total J/sub th/ for all ridge widths. Furthermore, the fundamental zero-order mode TEM/sub 00/ is achieved for 10 /spl mu/m ridge width.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
脊波导InAs/GaAs激光器
我们报道了利用脊波导几何结构减少InAs/GaAs激光器的电流扩散。为了研究电流扩散,制备了不同脊宽为5、10、20和50 /spl μ m的激光器。通过光输出对电流特性(L-I)和近场模式(NFP)实验研究了激光器的特性。比较了具有相同材料结构的氧化条纹几何激光器的阈值电流密度(J/sub /)与脊宽的关系。最后,具有脊波导几何形状的激光器显示出所有脊宽度的总J/sub /的减小。此外,在10 /spl mu/m脊宽下实现了基本零阶模式TEM/sub / 00/。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Ridge-waveguide InAs/GaAs lasers Transversal photovoltage in heterostructure and Schottky contact Process optimization and diffusion length evaluation of a new aqueous base developable negative epoxy electron beam resist Nature of the red photoluminescence in porous silicon Kinetics of surface processes arising in hydride pyrolysis and the problem of alloy intermixing near interfaces in Si(Ge)/Si/sub 1-x/Ge/sub x/ structures grown by gas source molecular beam epitaxy
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1