{"title":"Transversal photovoltage in heterostructure and Schottky contact","authors":"L. V. Shekhovtsov","doi":"10.1109/ASDAM.2000.889539","DOIUrl":null,"url":null,"abstract":"We have investigated the transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for the Ge-GaAs heterostructure and NbN-GaAs Schottky contact is determined by the interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples changes the interaction between the photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to obtain the characteristics of the interface uniformity in composite semiconductor structures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We have investigated the transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for the Ge-GaAs heterostructure and NbN-GaAs Schottky contact is determined by the interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples changes the interaction between the photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to obtain the characteristics of the interface uniformity in composite semiconductor structures.
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