{"title":"Synthesis of cubic-GaN nanoparticles using the Na flux method: A novel use for the ultra-high pressure apparatus","authors":"F. Kawamura, T. Taniguchi","doi":"10.1109/ICIPRM.2010.5516353","DOIUrl":null,"url":null,"abstract":"Nano-scale cubic-GaN particles were successfully synthesized using the Na flux method under about 500 atm with a belt-type ultra-high pressure apparatus. High pressure nitrogen gas of about 500 atm was sealed in the ultra-high pressure apparatus, which enabled the dissolution of pressurized nitrogen gas into a Ga-Na melt at 500°C without a compressor. In contrast, the conventional Na flux method is carried out under a pressure of 150 atm, the maximum pressure of a nitrogen gas cylinder. A characteristic feature of the process used herein is that the high-pressure reaction gas is dissolved into a flux within the ultra-high pressure apparatus. The c-GaN nanoparticles obtained by this method show excellent crystallinity and a low mixing ratio of hexagonal-GaN, and thus the method solves two common problems in the synthesis of c-GaN.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"110 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Nano-scale cubic-GaN particles were successfully synthesized using the Na flux method under about 500 atm with a belt-type ultra-high pressure apparatus. High pressure nitrogen gas of about 500 atm was sealed in the ultra-high pressure apparatus, which enabled the dissolution of pressurized nitrogen gas into a Ga-Na melt at 500°C without a compressor. In contrast, the conventional Na flux method is carried out under a pressure of 150 atm, the maximum pressure of a nitrogen gas cylinder. A characteristic feature of the process used herein is that the high-pressure reaction gas is dissolved into a flux within the ultra-high pressure apparatus. The c-GaN nanoparticles obtained by this method show excellent crystallinity and a low mixing ratio of hexagonal-GaN, and thus the method solves two common problems in the synthesis of c-GaN.