Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516156
M. Moehrle, J. Kreissl, W. Molzow, G. Przyrembel, C. Wagner, A. Sigmund, L. Moerl, N. Grote
1490nm surface emitting BH-DFB-laser diodes incorporating a 45° turning mirror and an integrated monitor photodiode are presented for the first time. The devices show VCSEL-like threshold currents of as low as 3…7mA in the operation temperature range between 20°C and 90°C and a modulation bandwidth of >8GHz. The integrated monitor diode operates temperature independent and is therefore well suited for laser power control.
{"title":"Ultra-low threshold 1490 nm surface-emitting BH-DFB laser diode with integrated monitor photodiode","authors":"M. Moehrle, J. Kreissl, W. Molzow, G. Przyrembel, C. Wagner, A. Sigmund, L. Moerl, N. Grote","doi":"10.1109/ICIPRM.2010.5516156","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516156","url":null,"abstract":"1490nm surface emitting BH-DFB-laser diodes incorporating a 45° turning mirror and an integrated monitor photodiode are presented for the first time. The devices show VCSEL-like threshold currents of as low as 3…7mA in the operation temperature range between 20°C and 90°C and a modulation bandwidth of >8GHz. The integrated monitor diode operates temperature independent and is therefore well suited for laser power control.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125093171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515926
A. Olivier, N. Wichmann, J. Mo, A. Noudéviwa, Y. Roelens, L. Desplanque, X. Wallart, F. Danneville, G. Dambrine, S. Bollaert, F. Martin, O. Desplats, J. Saint-Martin, M. Shi, Y. Wang, M. Chauvat, P. Ruterana, H. Maher
In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance of 70 mS/mm and the maximum drain current of 200 mA/mm.
{"title":"Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET","authors":"A. Olivier, N. Wichmann, J. Mo, A. Noudéviwa, Y. Roelens, L. Desplanque, X. Wallart, F. Danneville, G. Dambrine, S. Bollaert, F. Martin, O. Desplats, J. Saint-Martin, M. Shi, Y. Wang, M. Chauvat, P. Ruterana, H. Maher","doi":"10.1109/ICIPRM.2010.5515926","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515926","url":null,"abstract":"In this paper, a 200 nm n-channel inversion-type self-aligned In0.53Ga0.47As MOSFET with a Al2O3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and drain regions. The 200 nm gate-length MOSFET with a gate oxide thickness of 8 nm features the transconductance of 70 mS/mm and the maximum drain current of 200 mA/mm.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125155706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516056
O. Parillaud, M. Carras, G. Maisons, B. Simozrag, M. Garcia, X. Marcadet, F. Alexandre, O. Patard, F. Pommereau, O. Drisse
We report on the realization of both Distributed Feedback (DFB) and Fabry-Pérot (FP) Quantum Cascade Lasers (QCLs) at Alcatel Thales III-V Lab, involving MOVPE regrowth steps for the realization of the upper cladding and buried ridge structures. We present our results on both device types. Optimization of the planarization process as well as reduction of the thermal resistance achieved using semi-insulating InP:Fe for regrowth is shown and performance perspectives using these building blocks are addressed.
我们报告了在阿尔卡特泰雷兹III-V实验室实现分布式反馈(DFB)和fabry - p (FP)量子级联激光器(qcl)，包括实现上包层和埋脊结构的MOVPE再生步骤。我们展示了两种设备类型的结果。展示了使用半绝缘InP:Fe进行再生的平面化过程的优化以及热阻的降低，并讨论了使用这些构建块的性能前景。
{"title":"MOVPE regrowth steps for high power Quantum Cascade Lasers","authors":"O. Parillaud, M. Carras, G. Maisons, B. Simozrag, M. Garcia, X. Marcadet, F. Alexandre, O. Patard, F. Pommereau, O. Drisse","doi":"10.1109/ICIPRM.2010.5516056","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516056","url":null,"abstract":"We report on the realization of both Distributed Feedback (DFB) and Fabry-Pérot (FP) Quantum Cascade Lasers (QCLs) at Alcatel Thales III-V Lab, involving MOVPE regrowth steps for the realization of the upper cladding and buried ridge structures. We present our results on both device types. Optimization of the planarization process as well as reduction of the thermal resistance achieved using semi-insulating InP:Fe for regrowth is shown and performance perspectives using these building blocks are addressed.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125848414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516289
G. Takahashi, T. Amemiya, Takuo Tanemura, A. Higo, K. Takeda, Y. Nakano
We propose and experimentally demonstrate a novel structure for monolithically integrating a TM-mode waveguide optical isolator with active InP devices. A semiconductor ring laser with integrated isolator is fabricated and demonstrated for the first time.
{"title":"TM mode waveguide isolator monolithically integrated with InP active devices","authors":"G. Takahashi, T. Amemiya, Takuo Tanemura, A. Higo, K. Takeda, Y. Nakano","doi":"10.1109/ICIPRM.2010.5516289","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516289","url":null,"abstract":"We propose and experimentally demonstrate a novel structure for monolithically integrating a TM-mode waveguide optical isolator with active InP devices. A semiconductor ring laser with integrated isolator is fabricated and demonstrated for the first time.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122564129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516728
S. Fortuna, R. Dowdy, Xiuling Li
We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and compatible with existing processing technology and integratable with various devices.
{"title":"Epitaxial III-V planar nanowires: Self-aligned, high-mobility and transfer-printable","authors":"S. Fortuna, R. Dowdy, Xiuling Li","doi":"10.1109/ICIPRM.2010.5516728","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516728","url":null,"abstract":"We present planar, self-aligned, twin-free, and high-mobility GaAs semiconductor nanowires epitaxially grown on (100) and (110) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and compatible with existing processing technology and integratable with various devices.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122652899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516096
S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, S. Arai
A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.
{"title":"Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding","authors":"S. Kondo, T. Okumura, R. Osabe, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2010.5516096","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516096","url":null,"abstract":"A low-temperature direct wafer bonding technique has been researched by using plasma treatment. Si-to-Si direct bonding strength was 1.6 MPa by using plasma pretreatment prior to the heating and weighting. 1.4 MPa of InP/Si bonding strength was obtained by improving chemical cleaning process. On the other hand, photoluminescence properties of GaInAs/InP quantum wells bonded on Si substrate were investigated. An introduction of a 30-nm-thick superlattice buffer on the top of the wafer greatly suppressed photoluminescence intensity degradation near the bonded interface.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114439378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516035
T. Nagira, K. Ono, M. Takemi
In the growth of AlGaInAs/InP material system by metal organic vapor phase epitaxy (MOVPE), there are many hillocks on the wafer in some growth conditions. We analyzed the hillocks by TEM and EDX and found that the origin of the hillocks is InAs dots on growth interrupted interface. In addition, we investigated the growth condition dependence of hillock distribution in details, and revealed the origin and the mechanism of the formation of InAs dots.
{"title":"Investigation of the origin of InAs dot formation at the growth interrupted AlGaInAs hetero-interface grown by MOVPE","authors":"T. Nagira, K. Ono, M. Takemi","doi":"10.1109/ICIPRM.2010.5516035","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516035","url":null,"abstract":"In the growth of AlGaInAs/InP material system by metal organic vapor phase epitaxy (MOVPE), there are many hillocks on the wafer in some growth conditions. We analyzed the hillocks by TEM and EDX and found that the origin of the hillocks is InAs dots on growth interrupted interface. In addition, we investigated the growth condition dependence of hillock distribution in details, and revealed the origin and the mechanism of the formation of InAs dots.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"275 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130549729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5515998
A. Khadour, S. Bouchoule, J. Decobert, J. Harmand, J. Oudar
A 1.55µm VECSEL with a metal-GaAs/AlAs hybrid metamorphic mirror optimized for high power room temperature operation has been assembled with a fast saturable absorber mirror (SESAM) in a four-mirror cavity to generate mode-locked pulses at a frequency of 2 GHz. Stable pulses are obtained at room temperature avoiding the need for water cooling, with a pulsewidth < 2 ps and an average optical power at the output coupling mirror of 10 mW. The RF linewidth of the free running laser has been measured to be less than 1000 Hz.
{"title":"Room temperature picosecond mode-locked pulse generation from a 1.55µm VECSEL with an InGaAsN/GaAsN fast saturable absorber mirror","authors":"A. Khadour, S. Bouchoule, J. Decobert, J. Harmand, J. Oudar","doi":"10.1109/ICIPRM.2010.5515998","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5515998","url":null,"abstract":"A 1.55µm VECSEL with a metal-GaAs/AlAs hybrid metamorphic mirror optimized for high power room temperature operation has been assembled with a fast saturable absorber mirror (SESAM) in a four-mirror cavity to generate mode-locked pulses at a frequency of 2 GHz. Stable pulses are obtained at room temperature avoiding the need for water cooling, with a pulsewidth < 2 ps and an average optical power at the output coupling mirror of 10 mW. The RF linewidth of the free running laser has been measured to be less than 1000 Hz.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123229384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516132
Kuan-Wei Lee, Jung-Sheng Huang, Yu-Lin Lu, F. Lee, H. Lin, J. Huang, Yeong-Her Wang
The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ~ 4.24 × 10−7 A/cm2 at 1 MV/cm, and the interface trap density is ~ 1.7 × 1011 cm−2eV−1 for the LPD-SiO2 thickness of 29 nm.
{"title":"Investigation of SiO2 on AlGaAs prepared by liquid phase deposition","authors":"Kuan-Wei Lee, Jung-Sheng Huang, Yu-Lin Lu, F. Lee, H. Lin, J. Huang, Yeong-Her Wang","doi":"10.1109/ICIPRM.2010.5516132","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516132","url":null,"abstract":"The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO<inf>2</inf>) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO<inf>2</inf> very economically. Both the aqueous solution of hydro-fluosilicic acid (H<inf>2</inf>SiF<inf>6</inf>) and boric acid (H<inf>3</inf>BO<inf>3</inf>) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ~ 4.24 × 10<sup>−7</sup> A/cm<sup>2</sup> at 1 MV/cm, and the interface trap density is ~ 1.7 × 10<sup>11</sup> cm<sup>−2</sup>eV<sup>−1</sup> for the LPD-SiO<inf>2</inf> thickness of 29 nm.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127904914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2010-07-23DOI: 10.1109/ICIPRM.2010.5516084
D. Sapkota, M. S. Kayastha, K. Wakita
Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm−2 was obtained for the devices with Al0.1Ga0.16In0.74As well which is the lowest value ever reported at this well composition.
{"title":"Dependence of threshold current density on quantum well composition for compressive strained-layer AlxGayIn1−x−yAs lasers","authors":"D. Sapkota, M. S. Kayastha, K. Wakita","doi":"10.1109/ICIPRM.2010.5516084","DOIUrl":"https://doi.org/10.1109/ICIPRM.2010.5516084","url":null,"abstract":"Separate confinement AlGaInAs/InP compressive strained quantum well lasers especially in the wavelength range of 1.55 μm and 1.3 μm with 7.6 nm well thick have been studied. Threshold current density and emission wavelengths have been calculated as a function of well composition. A minimum of threshold current density of 146 Acm<sup>−2</sup> was obtained for the devices with Al<inf>0.1</inf>Ga<inf>0.16</inf>In<inf>0.74</inf>As well which is the lowest value ever reported at this well composition.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"246 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132028541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：