R. D. Tikhonov, A. V. Kozlov, A. Krasukov, S. Polomoshnov, A.G. Balashov
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引用次数: 0
Abstract
The influence of the location of p-well-n-well and n-well-p-substrate junctions and the well formation diffusion parameters on the double-well magnetotransistor magnetic sensitivity value was investigated by means of numerical modeling.
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