Pub Date : 2022-12-22DOI: 10.5750/ejpch.v4i2.1083.s126
A. V. Dvurechenskiy, A. Yakovlev
{"title":"First page","authors":"A. V. Dvurechenskiy, A. Yakovlev","doi":"10.5750/ejpch.v4i2.1083.s126","DOIUrl":"https://doi.org/10.5750/ejpch.v4i2.1083.s126","url":null,"abstract":"","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125270834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Just six months after the American invasion of Iraq began, President George W. Bush went before the United Nations General Assembly to announce that he was prepared to make "the greatest financial commitment of its kind since the Marshall Plan" in order to rebuild Iraq. The president's decision to link his policy in Iraq with George Marshall's policy in post–World War II Europe reminds us of how influential the Marshall Plan remains sixty years after it was conceived. But the president's effort at linkage also reminds us of how enormously talented the men around Marshall were in the 1947–48 period in which he served as secretary of state.
就在美国入侵伊拉克六个月后，乔治·w·布什(George W. Bush)总统在联合国大会(United Nations General Assembly)上宣布，为了重建伊拉克，他准备做出“自马歇尔计划(Marshall Plan)以来最大规模的财政承诺”。总统决定将他的伊拉克政策与乔治·马歇尔(George Marshall)在二战后的欧洲政策联系起来，这提醒我们，马歇尔计划(Marshall Plan)在构想60年后仍具有多大的影响力。但是，总统在联系方面的努力也提醒我们，在1947年至1948年马歇尔担任国务卿期间，他身边的人是多么有才能。
{"title":"Last page","authors":"Nicolaus Mills","doi":"10.1353/dss.2007.0093","DOIUrl":"https://doi.org/10.1353/dss.2007.0093","url":null,"abstract":"Just six months after the American invasion of Iraq began, President George W. Bush went before the United Nations General Assembly to announce that he was prepared to make \"the greatest financial commitment of its kind since the Marshall Plan\" in order to rebuild Iraq. The president's decision to link his policy in Iraq with George Marshall's policy in post–World War II Europe reminds us of how influential the Marshall Plan remains sixty years after it was conceived. But the president's effort at linkage also reminds us of how enormously talented the men around Marshall were in the 1947–48 period in which he served as secretary of state.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127760267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173947
V. A. Abanin, Mihail Ju. Loktev
The main provisions of the techniques of imitation modeling by the numerical methods of measuring processes of the multifunctional force sensor are analyzed. Its physical model is described. One of the options for elastic element design is provided.
{"title":"Techniques of imitation modeling by the numerical methods of measuring processes of the multifunctional force sensor","authors":"V. A. Abanin, Mihail Ju. Loktev","doi":"10.1109/EDM.2009.5173947","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173947","url":null,"abstract":"The main provisions of the techniques of imitation modeling by the numerical methods of measuring processes of the multifunctional force sensor are analyzed. Its physical model is described. One of the options for elastic element design is provided.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115296499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173999
D. V. Gerasimov, A. Sidorenko, A. Pavlov, E. Sypin
In article the way of ignition pyrometric gauge development is considered. This gauge is allow to detect ignitions in early stages of evolution and dangerous heating of object in controlled area that allow to create effective explosion suppressing systems for industry with potential explosion dangerous.
{"title":"Quick-operating object temperature control gauge with multiple alarm thresholds","authors":"D. V. Gerasimov, A. Sidorenko, A. Pavlov, E. Sypin","doi":"10.1109/EDM.2009.5173999","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173999","url":null,"abstract":"In article the way of ignition pyrometric gauge development is considered. This gauge is allow to detect ignitions in early stages of evolution and dangerous heating of object in controlled area that allow to create effective explosion suppressing systems for industry with potential explosion dangerous.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115767852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173930
Ya. V. Titovskaya, N. Shwartz, S. I. Romanov, Z. Yanovitskaja
Possibility to decrease nanochannel diameters up to one nanometer was demonstrated by Monte Carlo simulation of molecular beam epitaxy on nanochannel surface with following thermal oxidation. Study of atomic processes on porous Si(111) substrates was carried out. In wide range of deposition parameters the rate of nanochannel inlet size decrease was estimated to be 0.13 – 0.15 nm/ML. Optimal conditions for silicon deposition on membrane surface were determined: substrate temperature - from 520 to 700 K, and silicon flux intensity of 10−2 − 10 ML/s. Simulation of nanochannel membranes oxidation in oxygen flux revealed that effect of channel inlet size decreasing due oxidation was insignificant.
{"title":"Monte Carlo simulation of MBE and oxidation of porous silicon surface for production nanochannel membranes","authors":"Ya. V. Titovskaya, N. Shwartz, S. I. Romanov, Z. Yanovitskaja","doi":"10.1109/EDM.2009.5173930","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173930","url":null,"abstract":"Possibility to decrease nanochannel diameters up to one nanometer was demonstrated by Monte Carlo simulation of molecular beam epitaxy on nanochannel surface with following thermal oxidation. Study of atomic processes on porous Si(111) substrates was carried out. In wide range of deposition parameters the rate of nanochannel inlet size decrease was estimated to be 0.13 – 0.15 nm/ML. Optimal conditions for silicon deposition on membrane surface were determined: substrate temperature - from 520 to 700 K, and silicon flux intensity of 10−2 − 10 ML/s. Simulation of nanochannel membranes oxidation in oxygen flux revealed that effect of channel inlet size decreasing due oxidation was insignificant.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125181945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174001
D. Karnaushenko, V. G. Polovinkin
In this paper described scanning infrared microscope (SIRM) based on F408 infrared (IR) line spectrometer designed and developed in the ISP SB RAS. An automatically scanning system has been designed and implemented. Optical magnification and spatial resolution for given optical system has been determined. Advantages and disadvantages of SIRM in compare with F401 InAs matrix infrared microscope are also shown.
{"title":"Scanning infrared microscope","authors":"D. Karnaushenko, V. G. Polovinkin","doi":"10.1109/EDM.2009.5174001","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174001","url":null,"abstract":"In this paper described scanning infrared microscope (SIRM) based on F408 infrared (IR) line spectrometer designed and developed in the ISP SB RAS. An automatically scanning system has been designed and implemented. Optical magnification and spatial resolution for given optical system has been determined. Advantages and disadvantages of SIRM in compare with F401 InAs matrix infrared microscope are also shown.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122461804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173948
A. S. Volokhin, G. Devyatkov
This paper deals with structural and parametric synthesis of broadband matching and matching-correcting networks. The synthesis of the network structure is performed using the evolutional algorithm developed. For optimization of the element values the real-coded genetic algorithm is used. In the paper the brief description of the method developed is given and some special test cases are considered.
{"title":"Evolutional synthesis of broadband matching and matching-correcting networks","authors":"A. S. Volokhin, G. Devyatkov","doi":"10.1109/EDM.2009.5173948","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173948","url":null,"abstract":"This paper deals with structural and parametric synthesis of broadband matching and matching-correcting networks. The synthesis of the network structure is performed using the evolutional algorithm developed. For optimization of the element values the real-coded genetic algorithm is used. In the paper the brief description of the method developed is given and some special test cases are considered.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114291176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173985
V. Khmelev, S. Khmelev, D. Abramenko, S. N. Tsyganok
The article is devoted to the problems which can occur during the ultrasonic processing of liquid media with high damping of ultrasonic vibrations. The disadvantages of existing equipment are shown. The new ways of ultrasonic cavitational processing of viscous media are offered; they let to realize new technological processes, which are impossible in ordinary conditions without ultrasonic influence.
{"title":"Effectiveness increase of ultrasonic cavitational processing of viscous liquid media","authors":"V. Khmelev, S. Khmelev, D. Abramenko, S. N. Tsyganok","doi":"10.1109/EDM.2009.5173985","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173985","url":null,"abstract":"The article is devoted to the problems which can occur during the ultrasonic processing of liquid media with high damping of ultrasonic vibrations. The disadvantages of existing equipment are shown. The new ways of ultrasonic cavitational processing of viscous media are offered; they let to realize new technological processes, which are impossible in ordinary conditions without ultrasonic influence.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128596314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5173934
E. Sheremet, A. Nastovjak, I. Neizvestny, N. Shwartz
The dependence of nanowhisker morphology on growth conditions was studied by Monte Carlo simulation. Areas of growth conditions of filled and hollow nanowhiskers (nanotubes) were found. The area of inside dimension of nanotubes was shown to rise with increasing of flux.
{"title":"Examination of nanotube growth conditions by Monte Carlo simulation","authors":"E. Sheremet, A. Nastovjak, I. Neizvestny, N. Shwartz","doi":"10.1109/EDM.2009.5173934","DOIUrl":"https://doi.org/10.1109/EDM.2009.5173934","url":null,"abstract":"The dependence of nanowhisker morphology on growth conditions was studied by Monte Carlo simulation. Areas of growth conditions of filled and hollow nanowhiskers (nanotubes) were found. The area of inside dimension of nanotubes was shown to rise with increasing of flux.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129280759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-07-01DOI: 10.1109/EDM.2009.5174013
M. Dybko, S. S. Turnaev, S. Brovanov
This paper presents analytical equations for power losses calculation in three-level VSI controlled by carrier-based PWM with third harmonic injection. A magnitude current value in the four leg devices depending on three-phase load unbalance was obtained.
{"title":"A power losses calculation in a four-legged three-level voltage source inverter","authors":"M. Dybko, S. S. Turnaev, S. Brovanov","doi":"10.1109/EDM.2009.5174013","DOIUrl":"https://doi.org/10.1109/EDM.2009.5174013","url":null,"abstract":"This paper presents analytical equations for power losses calculation in three-level VSI controlled by carrier-based PWM with third harmonic injection. A magnitude current value in the four leg devices depending on three-phase load unbalance was obtained.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130651793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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