{"title":"Threshold Switching in Amorphous Cr-Doped Vanadium Oxide for New Crossbar Selector","authors":"J. Rupp, R. Waser, D. Wouters","doi":"10.1109/IMW.2016.7495293","DOIUrl":null,"url":null,"abstract":"Symmetrical (Pt) electroded undoped (Pt/a-VO<sub>x</sub>/Pt) and Cr-doped amorphous Vanadium Oxide (Pt/a-V<sub>1-y</sub>Cr<sub>y</sub>O<sub>x</sub>/Pt) devices were fabricated and electrically analyzed. Both devices show reproducible and symmetrical threshold switching after an initial forming step. However, the kind of threshold switching was basically different. For the undoped VO<sub>x</sub>, threshold switching was identified as a low T<sub>C</sub>, VO<sub>2</sub>-type IMT, consistent with disappearance of the switching around 60 °C, whereas Cr-doped VO<sub>x</sub> switches up to > 90 °C, with a lower OFF-state current. These properties together with the poor conduction in the initial amorphous films make this new Cr-doped amorphous VO<sub>x</sub> material of high interest for selector material in both 2D 1S1R and a newly proposed 3D selector scheme.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"6 10","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7495293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
Symmetrical (Pt) electroded undoped (Pt/a-VOx/Pt) and Cr-doped amorphous Vanadium Oxide (Pt/a-V1-yCryOx/Pt) devices were fabricated and electrically analyzed. Both devices show reproducible and symmetrical threshold switching after an initial forming step. However, the kind of threshold switching was basically different. For the undoped VOx, threshold switching was identified as a low TC, VO2-type IMT, consistent with disappearance of the switching around 60 °C, whereas Cr-doped VOx switches up to > 90 °C, with a lower OFF-state current. These properties together with the poor conduction in the initial amorphous films make this new Cr-doped amorphous VOx material of high interest for selector material in both 2D 1S1R and a newly proposed 3D selector scheme.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
