{"title":"30 dB of AGC from an FET","authors":"B. Hallford","doi":"10.1109/MWSYM.1985.1132054","DOIUrl":null,"url":null,"abstract":"A low-noise single-gate GaAs MESFET has been successfully used to provide a 30-dB AGC range for low-noise amplifiers in down-converters used in microwave communication systems from 4 to 11 GHz. Threshold NF is not affected. With 30 dB of AGC, the FET amplifier NF is 18 dB.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1132054","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A low-noise single-gate GaAs MESFET has been successfully used to provide a 30-dB AGC range for low-noise amplifiers in down-converters used in microwave communication systems from 4 to 11 GHz. Threshold NF is not affected. With 30 dB of AGC, the FET amplifier NF is 18 dB.
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