C. Yin, Miloš Rančić, N. Stavrias, G. D. Boo, J. McCallum, M. Sellars, S. Rogge
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Abstract
We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.
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