Pub Date : 2013-11-07DOI: 10.1109/IPCON.2013.6656393
S. Hofling, M. Lermer, J. Beetz, T. Hoang, J. P. Sprengers, A. Gaggero, D. Sahin, L. Midolo, M. Skacel, L. Balet, P. Jiang, S. Jahanmirinejad, G. Frucci, N. Chauvin, F. Mattioli, R. Sanjinés, R. Leoni, E. Engin, M. Thompson, J. O'Brien, A. Fiore, M. Kamp
Progress towards the development of a quantum integrated photonics platform on GaAs will be reported, including on-chip single photon sources, detectors, splitters, couplers and modulators.
将报告GaAs上量子集成光子学平台的发展进展，包括片上单光子源、探测器、分离器、耦合器和调制器。
{"title":"Quantum integrated photonics on GaAs","authors":"S. Hofling, M. Lermer, J. Beetz, T. Hoang, J. P. Sprengers, A. Gaggero, D. Sahin, L. Midolo, M. Skacel, L. Balet, P. Jiang, S. Jahanmirinejad, G. Frucci, N. Chauvin, F. Mattioli, R. Sanjinés, R. Leoni, E. Engin, M. Thompson, J. O'Brien, A. Fiore, M. Kamp","doi":"10.1109/IPCON.2013.6656393","DOIUrl":"https://doi.org/10.1109/IPCON.2013.6656393","url":null,"abstract":"Progress towards the development of a quantum integrated photonics platform on GaAs will be reported, including on-chip single photon sources, detectors, splitters, couplers and modulators.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131112104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472356
W. Lei, P. Parkinson, H. Tan, C. Jagadish
This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.
{"title":"Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications","authors":"W. Lei, P. Parkinson, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472356","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472356","url":null,"abstract":"This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125909333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Photonic crystals are widely known for their light-trapping capabilities. This is often associated with the occurrence of a photonic band gap or other suppression in the electromagnetic density of states [1-3]. This also enables unprecedented forms of strong coupling between light and matter. A less studied form of light-trapping occurs in the higher bands of a photonic crystal, where the electromagnetic density of states is enhanced rather than suppressed. This enables strong absorption of light from a broadband source over a wide acceptance angle in a material with weak intrinsic absorption [4].
{"title":"Light trapping and solar energy harvesting in thin film photonic crystals","authors":"S. John","doi":"10.1117/12.2061129","DOIUrl":"https://doi.org/10.1117/12.2061129","url":null,"abstract":"Photonic crystals are widely known for their light-trapping capabilities. This is often associated with the occurrence of a photonic band gap or other suppression in the electromagnetic density of states [1-3]. This also enables unprecedented forms of strong coupling between light and matter. A less studied form of light-trapping occurs in the higher bands of a photonic crystal, where the electromagnetic density of states is enhanced rather than suppressed. This enables strong absorption of light from a broadband source over a wide acceptance angle in a material with weak intrinsic absorption [4].","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122343869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472390
R. Elliman, M. Saleh, D. Venkatachalam, T. Kim, K. Belay, F. Karouta
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.
{"title":"Resistive switching in high-k dielectrics for non-volatile memory applications","authors":"R. Elliman, M. Saleh, D. Venkatachalam, T. Kim, K. Belay, F. Karouta","doi":"10.1109/COMMAD.2012.6472390","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472390","url":null,"abstract":"We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122628597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472438
B. C. Johnson, S. Castelletto, T. Ohshima, T. Umeda
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.
{"title":"Fabrication of single photon centres in silicon carbide","authors":"B. C. Johnson, S. Castelletto, T. Ohshima, T. Umeda","doi":"10.1109/COMMAD.2012.6472438","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472438","url":null,"abstract":"Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129009101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472361
J. Cadusch, T. James, T. Davis, A. Roberts
We report on a plasmonic metamaterial approach to controlling the polarisation state of visible and near infra-red (NIR) light.
我们报告了一种等离子体超材料方法来控制可见光和近红外光的偏振状态。
{"title":"A metamaterial antenna approach to near infra-red polarisation state control","authors":"J. Cadusch, T. James, T. Davis, A. Roberts","doi":"10.1109/COMMAD.2012.6472361","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472361","url":null,"abstract":"We report on a plasmonic metamaterial approach to controlling the polarisation state of visible and near infra-red (NIR) light.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114212144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472353
S. Mokkapati, D. Saxena, Q. Gao, H. Tan, C. Jagadish
We study the possibility of increasing the quantum efficiency of III-V semiconductor nanowire emitters using plasmonics. Results on the effect of plasmonic nanoparticle size, emitter-plasmonic nanoparticle distance and the initial quantum efficiency of the emitter on the quantum efficiency enhancement factor are presented.
{"title":"Effect of plasmonic nanoparticles on the quantum efficiency of III–V semiconductor nanowire emitters","authors":"S. Mokkapati, D. Saxena, Q. Gao, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2012.6472353","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472353","url":null,"abstract":"We study the possibility of increasing the quantum efficiency of III-V semiconductor nanowire emitters using plasmonics. Results on the effect of plasmonic nanoparticle size, emitter-plasmonic nanoparticle distance and the initial quantum efficiency of the emitter on the quantum efficiency enhancement factor are presented.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114823578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472398
P. Sajewicz, L. Fu, H. Tan, K. Vora, C. Jagadish
In this work, we report the use of dielectric capping layer of TiO2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ~ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.
{"title":"Monolithically integrated multi-section semiconductor laser by selective area quantum well intermixing","authors":"P. Sajewicz, L. Fu, H. Tan, K. Vora, C. Jagadish","doi":"10.1109/COMMAD.2012.6472398","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472398","url":null,"abstract":"In this work, we report the use of dielectric capping layer of TiO2 to selectively suppress thermal interdiffusion of an InGaAs/GaAs quantum well laser structure. Large differential wavelength shift of ~ 25nm has been obtained across the same wafer between the uncapped and capped regions which is promising for achieving monolithic integration of multi-section semiconductor laser consisting of a gain, a phase and a passive waveguide sections.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127977081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Lim, J. McCallum, N. Stavrias, R. Marvel, R. Haglund
Vanadium dioxide (VO2) undergoes an insulator-metal transition (IMT) that involves drastic changes in its electrical and optical properties at relatively low critical temperature Tc ≈ 67°C [1]. The switching speed when triggered by an optical impulse is incredibly fast, within a femtosecond timescale [2]. Erbium (Er3+) with a stimulated emission at the standard telecommunication wave-length of 1535nm has been used extensively in fiber-optic communication systems [3]. The combination of VO2 and Er3+ could make an ultrafast optical switch that is capable of simultaneous signal amplification. In this work, we investigated the possibilities of making such a device, both theoretically and experimentally. Our experimental methods involve temperature-driven optical switching tests and photoluminescence (PL) spectroscopy on Er3+ implanted VO2 thin films. The observations of the IMT of VO2 and the PL of Er3+ in the thin films would be vital in determining whether the VO2:Er system would work as an optical switch and amplifier. A range of implantation and post-annealing schemes were explored in an attempt to find the optimal processing conditions that would maximize the qualities of the optical switching and PL.
{"title":"Optical switching and photoluminescence in erbium implanted vanadium dioxide thin films","authors":"H. Lim, J. McCallum, N. Stavrias, R. Marvel, R. Haglund","doi":"10.1557/OPL.2013.544","DOIUrl":"https://doi.org/10.1557/OPL.2013.544","url":null,"abstract":"Vanadium dioxide (VO2) undergoes an insulator-metal transition (IMT) that involves drastic changes in its electrical and optical properties at relatively low critical temperature Tc ≈ 67°C [1]. The switching speed when triggered by an optical impulse is incredibly fast, within a femtosecond timescale [2]. Erbium (Er3+) with a stimulated emission at the standard telecommunication wave-length of 1535nm has been used extensively in fiber-optic communication systems [3]. The combination of VO2 and Er3+ could make an ultrafast optical switch that is capable of simultaneous signal amplification. In this work, we investigated the possibilities of making such a device, both theoretically and experimentally. Our experimental methods involve temperature-driven optical switching tests and photoluminescence (PL) spectroscopy on Er3+ implanted VO2 thin films. The observations of the IMT of VO2 and the PL of Er3+ in the thin films would be vital in determining whether the VO2:Er system would work as an optical switch and amplifier. A range of implantation and post-annealing schemes were explored in an attempt to find the optimal processing conditions that would maximize the qualities of the optical switching and PL.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"30 11","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131539290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-12-01DOI: 10.1109/COMMAD.2012.6472391
T. Nestler, S. Haas, R. Otto, F. Schneider, S. Hickey, S. Gabriel, C. Himcinschi, V. Klemm, G. Schreiber, J. Heitmann
In this paper our recent research on Ge and PbS nanoparticles embedded in ZrO2 will be reviewed. Ge nanoparticles have been deposited by rf-cosputtering of ZrGe2O2.9/ZrO2 superlattices and subsequent annealing. ZrO2 and the phase separated Ge crystallizes at 650°C into nanocrystalline layers. These layers show a luminescence signal at 2.5 eV, which is contributed to defect luminescence. PbS nanoparticles have been fabricated using wet chemical methods and embedded in the ZrO2 matrix by sol-gel deposition. In this case a luminescence signal at 1.3 μm has been detected after annealing at 100°C.
{"title":"Low-band gap nanoparticles embedded in high-K dielectrics","authors":"T. Nestler, S. Haas, R. Otto, F. Schneider, S. Hickey, S. Gabriel, C. Himcinschi, V. Klemm, G. Schreiber, J. Heitmann","doi":"10.1109/COMMAD.2012.6472391","DOIUrl":"https://doi.org/10.1109/COMMAD.2012.6472391","url":null,"abstract":"In this paper our recent research on Ge and PbS nanoparticles embedded in ZrO<sub>2</sub> will be reviewed. Ge nanoparticles have been deposited by rf-cosputtering of ZrGe<sub>2</sub>O<sub>2.9</sub>/ZrO<sub>2</sub> superlattices and subsequent annealing. ZrO<sub>2</sub> and the phase separated Ge crystallizes at 650°C into nanocrystalline layers. These layers show a luminescence signal at 2.5 eV, which is contributed to defect luminescence. PbS nanoparticles have been fabricated using wet chemical methods and embedded in the ZrO<sub>2</sub> matrix by sol-gel deposition. In this case a luminescence signal at 1.3 μm has been detected after annealing at 100°C.","PeriodicalId":136573,"journal":{"name":"COMMAD 2012","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130701528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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