Improved Design Method for X-Band Microstrip FET Amplifiers without Experimental Adjustment Techniques.

A. Delgado, C. Camaoho, V. Ortega
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Abstract

In this paper we desrcibe a preoise method of designing FET amplifiers, that permit us to get a very good accordanoe between the ca1cu1ated design networks and the final results obtained by measurements, avoiding the lengthy and tricky adjustment that are usual. With our method we have designed a two-stage FET amplifier at 12 GHz, using two NE24406 transistors, with 21 dB gain, 4.0 dB noise factor and 1.25 input and output VSWR. The circuit has been made on alumina substrates. These excellent results were obtained in the first design without any adjustment, which proves the exactitude of our design method.
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无实验调整技术的x波段微带场效应管放大器改进设计方法。
在本文中,我们描述了一种精确的设计FET放大器的方法,使我们能够在计算的设计网络和最终测量结果之间获得非常好的一致性,避免了通常冗长而棘手的调整。利用该方法,我们设计了一个12 GHz的两级场效应管放大器,使用两个NE24406晶体管,增益为21 dB,噪声系数为4.0 dB,输入输出驻波比为1.25。电路是在氧化铝衬底上制造的。这些优良的结果在第一次设计中没有任何调整,证明了我们的设计方法的准确性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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