Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332538
N. Krause
Microstrip circular disc resonators with pure dielectric or gyrotropic substrates are of some practical interest in the field of MIC's. To evaluate the resonance frequencies especially of those, realized on ferrimagnetic materials, a new approach was made, giving better accuracy than the commonly used magnetic-wall-model. In this paper we present a brief summary of the theory, some numerical features and several computed resonance frequencies, which agree very well with experimental data.
{"title":"Improved Microstrip Circulator Design by Modified Resonance computations","authors":"N. Krause","doi":"10.1109/EUMA.1978.332538","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332538","url":null,"abstract":"Microstrip circular disc resonators with pure dielectric or gyrotropic substrates are of some practical interest in the field of MIC's. To evaluate the resonance frequencies especially of those, realized on ferrimagnetic materials, a new approach was made, giving better accuracy than the commonly used magnetic-wall-model. In this paper we present a brief summary of the theory, some numerical features and several computed resonance frequencies, which agree very well with experimental data.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127115201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332513
W. Schilz
Based on traditional microwave techniques a new branch is rapidly growing: The application of microwaves for industrial measurements and process control. In many cases microwaves are superior to other methods because of the specific microwave behaviour of materials and the possibility of contact-free, remote probing. The use of microwave techniques has been stimulated by the development of integration techniques both for the microwave part and the signal processing part which allows the construction of compact instruments. This paper includes a general report on the various applications of microwaves in industrial measurement and a discussion of the technical aspects. Some applications of this technique in medical diagnostic will also be mentioned.
{"title":"Novel Microwave Technique for Industrial Measurements","authors":"W. Schilz","doi":"10.1109/EUMA.1978.332513","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332513","url":null,"abstract":"Based on traditional microwave techniques a new branch is rapidly growing: The application of microwaves for industrial measurements and process control. In many cases microwaves are superior to other methods because of the specific microwave behaviour of materials and the possibility of contact-free, remote probing. The use of microwave techniques has been stimulated by the development of integration techniques both for the microwave part and the signal processing part which allows the construction of compact instruments. This paper includes a general report on the various applications of microwaves in industrial measurement and a discussion of the technical aspects. Some applications of this technique in medical diagnostic will also be mentioned.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127166325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332607
J. Vandewege, P. Lagasse, T. Naten, F. Sleeckx, H. Tromp, G. Hoffman
Acoustic surface wave resonators have been used extensively in narrow band applications. In this paper new SAW resonator structures are described, which have the same impedance characteristics over a large band as bulk wave resonators operating at fundamental frequency. Theoretical and experimental results obtained for those SAW resonators show that they can readily be incorporated in large bandwidth ladder or lattice filters for VHF frequencies.
{"title":"Acoustic Surface Wave Resonators for Broadband Applications","authors":"J. Vandewege, P. Lagasse, T. Naten, F. Sleeckx, H. Tromp, G. Hoffman","doi":"10.1109/EUMA.1978.332607","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332607","url":null,"abstract":"Acoustic surface wave resonators have been used extensively in narrow band applications. In this paper new SAW resonator structures are described, which have the same impedance characteristics over a large band as bulk wave resonators operating at fundamental frequency. Theoretical and experimental results obtained for those SAW resonators show that they can readily be incorporated in large bandwidth ladder or lattice filters for VHF frequencies.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125144579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332519
J. Eshbach, S. Yu, W. Cady, N. T. Lavoo
New results in the 3-5 GHz region, obtained on CATT cells designed for improved efficiency as microwave power amplifiers, are reported. At 3.0 GHz collector efficiencies of 39% have been measured with 12 dB gain and 1.4 watts peak output power per cell. At 5.0 GHz the results are: 2l% efficiency, 6 dB gain and 0.9 watts output. The improved performance is due to reduced collector-base capacitance and increased emitter periphery using a self-registered emitter-base metallization approach. Operating characteristics of CATTS are discussed and compared with normal bipolar transistors.
{"title":"Performance and Circuit Charasteristics of CATTS","authors":"J. Eshbach, S. Yu, W. Cady, N. T. Lavoo","doi":"10.1109/EUMA.1978.332519","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332519","url":null,"abstract":"New results in the 3-5 GHz region, obtained on CATT cells designed for improved efficiency as microwave power amplifiers, are reported. At 3.0 GHz collector efficiencies of 39% have been measured with 12 dB gain and 1.4 watts peak output power per cell. At 5.0 GHz the results are: 2l% efficiency, 6 dB gain and 0.9 watts output. The improved performance is due to reduced collector-base capacitance and increased emitter periphery using a self-registered emitter-base metallization approach. Operating characteristics of CATTS are discussed and compared with normal bipolar transistors.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126150450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332625
A. Shroff, G. Firmain, J. Marechal
Traveling-wave tubes (TWT's) are widely used as power amplifiers in communications repeaters, either in terrestrial microwave links or in satelliteto-ground links. In all cases, TWT life and reliability are characteristics of primary importance, because of maintenance costs (stations in remote areas) or because replacement of a failed tube is physically impossible (case of satellite systems). Although redundancy is widely employed, especially in satellites, the operating life goals remain high. Users of terrestrial tubes are interested in average lives of 30 to 40 000 hours whereas the satellite application calls for tubes capable of operating continuously for up to 10 years. Unlike other electronic components, electron tubes incorporate parts, such as the cathode, which are subject to wearout due to various physical and chemical phenomena, which may limit their useful life. TWT's are complex, incorporating up to 200 parts, playing up to 15 functions ; any failure of any one function dramatically affects the TWT performance. Describelin this paper is the long path that has been followed to reach the long-life, high-reliability standard of present communications TNT' s.
{"title":"Reliability and Life of TWT's for Terrestrial and Space Communications Systems","authors":"A. Shroff, G. Firmain, J. Marechal","doi":"10.1109/EUMA.1978.332625","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332625","url":null,"abstract":"Traveling-wave tubes (TWT's) are widely used as power amplifiers in communications repeaters, either in terrestrial microwave links or in satelliteto-ground links. In all cases, TWT life and reliability are characteristics of primary importance, because of maintenance costs (stations in remote areas) or because replacement of a failed tube is physically impossible (case of satellite systems). Although redundancy is widely employed, especially in satellites, the operating life goals remain high. Users of terrestrial tubes are interested in average lives of 30 to 40 000 hours whereas the satellite application calls for tubes capable of operating continuously for up to 10 years. Unlike other electronic components, electron tubes incorporate parts, such as the cathode, which are subject to wearout due to various physical and chemical phenomena, which may limit their useful life. TWT's are complex, incorporating up to 200 parts, playing up to 15 functions ; any failure of any one function dramatically affects the TWT performance. Describelin this paper is the long path that has been followed to reach the long-life, high-reliability standard of present communications TNT' s.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115520689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332612
F. Henry, M. Broncy, A. Berteaud
The study of the binding state of water in organic or mineral compounds is important to understand the dehydration mechanisms in macromolecular films or the setting and hardening of cement pastes. A sensitive method for measuring microwave dielectric absorption of samples was used in order to determine the free water content or the binding forces of water molecules when the water content is constant.
{"title":"The Hydration Kinetics Studied by Means of Microwaves","authors":"F. Henry, M. Broncy, A. Berteaud","doi":"10.1109/EUMA.1978.332612","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332612","url":null,"abstract":"The study of the binding state of water in organic or mineral compounds is important to understand the dehydration mechanisms in macromolecular films or the setting and hardening of cement pastes. A sensitive method for measuring microwave dielectric absorption of samples was used in order to determine the free water content or the binding forces of water molecules when the water content is constant.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117032251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332573
X. Rozec
The fast switching matrix studied and realized as a prototype by THOMSON-CSF DMH for INTELSAT and the CNET allows all possible interconnections between the 16 input ports and the 16 output ports. - It can be one of the essential elements of the future telecommunications satellites in the 4/6 and/or 11/14 GHz bands. - In its design, it is a complex sub-assembly which uses the most advanced technologies of the microwave integrated circuits. - It represents a record in the density of microwave components : 512 microwave PIN diodes grouped with their drivers in a 2 litre space. - This paper will show the various studies undertaken. In the first part, there will be a short description of the prototype that has been realized and the way in which it works. In the second part we present a more complete model from the technological point of view and which is now being realized.
{"title":"16 × 16 Fast Switching Matrix, in the 3.7 - 4.2 GHz Band for Satellite Communications","authors":"X. Rozec","doi":"10.1109/EUMA.1978.332573","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332573","url":null,"abstract":"The fast switching matrix studied and realized as a prototype by THOMSON-CSF DMH for INTELSAT and the CNET allows all possible interconnections between the 16 input ports and the 16 output ports. - It can be one of the essential elements of the future telecommunications satellites in the 4/6 and/or 11/14 GHz bands. - In its design, it is a complex sub-assembly which uses the most advanced technologies of the microwave integrated circuits. - It represents a record in the density of microwave components : 512 microwave PIN diodes grouped with their drivers in a 2 litre space. - This paper will show the various studies undertaken. In the first part, there will be a short description of the prototype that has been realized and the way in which it works. In the second part we present a more complete model from the technological point of view and which is now being realized.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128259324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332635
K. Motoya, Y. Okuno, J. Nishizawa
The tunnel injection increases steeply by the electric field intensity over 1000 kV/cm and the thickness of the tunnel injection region less than 100 Å is suitable for the injection responsible above short millimeter wave where the impact ionization ceases to follow, because of the larger time constant. [3] The Tunnel injection transit time (Tunnett) diode operates in higher frequency region with lower noise level than those of the Impatt diode. Tunnett diode will be useful in higher frequency in the range from 100 to 1000 GHz over the range for GaAs SIT. GaAs Tunnett diodes with p+n and p+ nn+ structures have been fabricated by a new LPE method (TDM under CVP). Oscillation in the circuit from 75 to 325 GHz have been examined and the pulsed fundamental oscillation up to 278 GHz has been obtained from the p+nn+ diode. An output power of about I mW has also been obtained at 200 GHz.
{"title":"Tunnel Injection Oscillator Over 200 GHz","authors":"K. Motoya, Y. Okuno, J. Nishizawa","doi":"10.1109/EUMA.1978.332635","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332635","url":null,"abstract":"The tunnel injection increases steeply by the electric field intensity over 1000 kV/cm and the thickness of the tunnel injection region less than 100 Å is suitable for the injection responsible above short millimeter wave where the impact ionization ceases to follow, because of the larger time constant. [3] The Tunnel injection transit time (Tunnett) diode operates in higher frequency region with lower noise level than those of the Impatt diode. Tunnett diode will be useful in higher frequency in the range from 100 to 1000 GHz over the range for GaAs SIT. GaAs Tunnett diodes with p+n and p+ nn+ structures have been fabricated by a new LPE method (TDM under CVP). Oscillation in the circuit from 75 to 325 GHz have been examined and the pulsed fundamental oscillation up to 278 GHz has been obtained from the p+nn+ diode. An output power of about I mW has also been obtained at 200 GHz.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129352690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332528
L. Nevin, R. Wong
Low noise GaAs FET amplifier performance is enhanced at 1-2 GHz frequencies through the use of source inductance feedback. A simple circuit model predicts noise and signal performance and is used to derive matching circuits for the amplifier design. A 1-2 GHz single stage amplifier, designed on the basis of the modeled results, demonstrates <1.7dB noise figure, 15dB gain, and modest VSWR across the band. Over narrower band-widths, < ldB noise figure with 15dB of associated gain and <3:1 VSWR is demonstrated.
{"title":"L-Band GaAs FET Amplifier","authors":"L. Nevin, R. Wong","doi":"10.1109/EUMA.1978.332528","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332528","url":null,"abstract":"Low noise GaAs FET amplifier performance is enhanced at 1-2 GHz frequencies through the use of source inductance feedback. A simple circuit model predicts noise and signal performance and is used to derive matching circuits for the amplifier design. A 1-2 GHz single stage amplifier, designed on the basis of the modeled results, demonstrates <1.7dB noise figure, 15dB gain, and modest VSWR across the band. Over narrower band-widths, < ldB noise figure with 15dB of associated gain and <3:1 VSWR is demonstrated.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130652833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1978-10-01DOI: 10.1109/EUMA.1978.332621
G. Wrixon
A superhetrodyne receiver operating in the frequenCY range 350 - 400 GHz has been constructed. The mixer consists of a low capacitance GaAs Schottky barrier diode, contacted by means of an ultra small inductance spring, mounted across a reduced height waveguide which is fed by a corrugated horn. The quasi-optical diplexer consists of a modified polarization rotating Michelson interferometer and the local oscillator is a Carcinatron. The overall receiver design is discussed and results of measured performance will be presented.
{"title":"A Superhetrodyne Receiver from 350 - 400 GHz","authors":"G. Wrixon","doi":"10.1109/EUMA.1978.332621","DOIUrl":"https://doi.org/10.1109/EUMA.1978.332621","url":null,"abstract":"A superhetrodyne receiver operating in the frequenCY range 350 - 400 GHz has been constructed. The mixer consists of a low capacitance GaAs Schottky barrier diode, contacted by means of an ultra small inductance spring, mounted across a reduced height waveguide which is fed by a corrugated horn. The quasi-optical diplexer consists of a modified polarization rotating Michelson interferometer and the local oscillator is a Carcinatron. The overall receiver design is discussed and results of measured performance will be presented.","PeriodicalId":429268,"journal":{"name":"1978 8th European Microwave Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1978-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124147494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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