A Novel Bumping Method for Flip-Chip Interconnection

Kun Li, Gaowei Xu, Quan Zhou, W. Gai, Yanhong Wu, Jie Ren, Zhen Wang
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Abstract

In this paper, a novel bumping method for the flip-chip interconnection is proposed, which can be used in the multichip modules (MCM) of superconducting circuits. The silicon bump was prepared by the etching method, and surface was metalized by sputtering niobium metal, which was used for the interconnection between the chip and the substrate. Through electromagnetic simulation, the silicon bump can achieve the transmission performance of $\mathbf{S}_{11} \mathbf{\leqslant-15} \mathbf{dB}\ \mathbf{and}\ \mathbf{S}_{21} \geqslant$ -1dB in the range of 1-100GHz. By using superconducting materials, superconducting interconnection can be realized. And its excellent high-frequency transmission performance shows that silicon bump can be used for multi-chip interconnection of superconducting integrated circuits.
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一种新的倒装互连碰撞方法
本文提出了一种新的倒装互连方法,可用于超导电路的多芯片模块(MCM)。采用蚀刻法制备硅凸包,并溅射金属铌进行表面金属化处理,用于芯片与衬底之间的互连。通过电磁仿真,硅凸包在1-100GHz范围内可实现$\mathbf{S}_{11} \mathbf{\leqslant-15} \mathbf{dB}\ \mathbf{and}\ \mathbf{S}_{21} \geqslant$ -1dB的传输性能。利用超导材料,可以实现超导互连。其优异的高频传输性能表明,硅凸包可用于超导集成电路的多芯片互连。
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