MSW resonators on micromachined silicon membrane

G. Sajin, R. Marcelli, F. Craciunoiu, A. Cismaru
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Abstract

Tunable band-stop and band-pass straight edge resonators (SER) on silicon membrane were obtained and characterized. S-parameters have been measured at different DC magnetic biasing fields showing a frequency tunability domain between 3 GHz and 9.5 GHz ca for band stop resonators and between 2 GHz and 7.5 GHz ca. for band pass resonators. An improvement of the performances for the SERs excited by micromachined microstrip transducers has been clearly demonstrated. The utilization of silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices in microwave circuit with micromachined structures.
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微加工硅膜上的城市生活垃圾谐振器
在硅膜上制备了可调谐带阻和带通直边谐振器,并对其进行了表征。在不同的直流偏置磁场下测量了s参数,表明带阻谐振器的频率可调谐域在3 GHz至9.5 GHz之间,带通谐振器的频率可调谐域在2 GHz至7.5 GHz之间。微机械微带换能器激发的SERs的性能得到了明显的改善。利用硅膜来支持MSW-SERs为微波电路中的静磁波器件与微机械结构的集成提供了重要的突破口。
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