{"title":"A Selector with Special Design for High on-current and Selectivity","authors":"Qi Lin, Qu Cheng, H. Tong, X. Miao","doi":"10.1109/CICTA.2018.8706096","DOIUrl":null,"url":null,"abstract":"In this letter, we proposed a special design method to realize both high on-current and selectivity of selectors. By introducing CuS as ion supply layer, our proposed selector supplies limited Cu ions to form weak filament to switch on at voltage over Vth, and effectively retract Cu ions to break down the filament to switch off at voltage lower than Vhold. Meanwhile, high-defect-density and wide-band-gap chalcogenide GeSe assists the diffusion process of Cu atoms and enhance selectivity.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8706096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this letter, we proposed a special design method to realize both high on-current and selectivity of selectors. By introducing CuS as ion supply layer, our proposed selector supplies limited Cu ions to form weak filament to switch on at voltage over Vth, and effectively retract Cu ions to break down the filament to switch off at voltage lower than Vhold. Meanwhile, high-defect-density and wide-band-gap chalcogenide GeSe assists the diffusion process of Cu atoms and enhance selectivity.