Y. Ishii, R. Sugano, Yao-Jen Lee, Wen-Fa Wu, K. Maeda, M. Miura
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引用次数: 0
Abstract
We present hydrogen plasma treatment at low temperature that modulates SiGe surface. In this study, we investigated the mechanism of SiGe surface modification after hydrogen plasma exposure, which produces a Si-rich surface. We reveal the mechanism of the surface modulation, which is induced by Si surface segregation (i.e., ion-energy induced site exchange between Si and Ge across different layers). We also propose an ion-energy localization model that drives the Si segregation. Ab-initio calculation also proves how energetically favorable the site exchange is.
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