Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9798267
Yuchao Yang
Since the connection of the theoretical memristor concept with physical resistive switching devices in 2008, tremendous progress has been made in terms of material and device technology developments and their applications in memory and computing systems. The physical embodiments of memristors correspond to various resistive switching devices based on different mechanisms. These mechanisms endow the memristors with rich nonlinear dynamics, which is key to constructing biologically plausible dynamic computing systems. Memristor can be described as a set of differential equations that indicate how the internal state variables determine device characteristics and how external electrical stimulations influence these state variables. The increases in the number of state variables and internal dynamics have dramatically enriched the dynamics and functionality of memristors. Further exploration and control of such dynamics are essential for highly efficient information processing applications.
{"title":"Memristor Dynamics Enabled Computing","authors":"Yuchao Yang","doi":"10.1109/EDTM53872.2022.9798267","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798267","url":null,"abstract":"Since the connection of the theoretical memristor concept with physical resistive switching devices in 2008, tremendous progress has been made in terms of material and device technology developments and their applications in memory and computing systems. The physical embodiments of memristors correspond to various resistive switching devices based on different mechanisms. These mechanisms endow the memristors with rich nonlinear dynamics, which is key to constructing biologically plausible dynamic computing systems. Memristor can be described as a set of differential equations that indicate how the internal state variables determine device characteristics and how external electrical stimulations influence these state variables. The increases in the number of state variables and internal dynamics have dramatically enriched the dynamics and functionality of memristors. Further exploration and control of such dynamics are essential for highly efficient information processing applications.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121375583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9798106
Tzu-Chieh Hong, C. Su, Yao-Jen Lee, Yiming Li, S. Samukawa, T. Chao
In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.
在这项工作中，我们报道了采用低损伤中性束蚀刻(NBE)技术制造的铁电HfZrOx (FE-HZO) Ge FinFET逆变器。实现了超过50 V/V的显著电压增益。对逆变器进行了循环运行，以考察设备的可靠性。电压传递曲线有明显的正偏移和负偏移，分别是由陷阱和极化主导的机制造成的。本工作的发现有助于更好地理解铁电基锗CMOS的工作原理。
{"title":"Investigation on Polarization and Trapping Dominated Reliability for Ferroelectric-HfZrOx Ge FinFET Inverters","authors":"Tzu-Chieh Hong, C. Su, Yao-Jen Lee, Yiming Li, S. Samukawa, T. Chao","doi":"10.1109/EDTM53872.2022.9798106","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798106","url":null,"abstract":"In this work, we report ferroelectric HfZrOx (FE-HZO) Ge FinFET inverters fabricated by the low-damage neutral beam etching (NBE) technology. A remarkable voltage gain over 50 V/V is achieved. Cyclic operation of the inverters were performed to investigate the reliability of the devices. The distinct positive and negative shifts of voltage transfer curves are found owing to trap and polarization dominated mechanism, respectively. The findings of this work is conducive to better understanding of operation for ferroelectric-based Ge CMOS.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123585899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9798339
I. Roqan, N. Alwadai, S. Mitra, Hadeel Amoudi
The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p−n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.
{"title":"High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays","authors":"I. Roqan, N. Alwadai, S. Mitra, Hadeel Amoudi","doi":"10.1109/EDTM53872.2022.9798339","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798339","url":null,"abstract":"The photodetector is fabricated simply by spray-coating ZnO QDs on a CuO micro-pyramid array. The p−n junction structure enhances the performance of the DUV n-ZnO/p-CuO/p-Si micro-pyramid device. The photodetector is characterized by high photo-responsivity at 244 nm (UV-C) with fast photoresponse and a cut-off at 280 nm. High self-powered photoresponse is confirmed. These high-performance solar-bind DUV photodetector arrays can be scaled up for mass production of a wide range of applications.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116056744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to construct highly reliable image storages with triple-level-cell (TLC) 3D charge-trap NAND flash memory, the image coding strategy is optimized by taking the memory properties into account. Firstly, error bits at different program states are studied on the NAND chip tester, and then we propose a high-to-low flipping (HLF) coding scheme to suppress bit-error-rate (BER). It is found that the HLF coding scheme can effectively suppress BER during the long-time retention, which is important to prolong the lifetime of image storages. Specially, in the fresh block, BER is reduced to x63.9% ~ 44.9%; while in the 2000 PE cycled block, BER can be reduced to x34.9% ~ 15.6%.
{"title":"High-to-Low Flippling (HLF) Coding Strategy in Triple-levell-cell (TLC) 3D NAND Flash Memory to Construct Reliable Image Storages","authors":"Binglu Chen, Yachen Kong, Zhaohui Sun, Xiaotong Fang, Xuepeng Zhan, Jiezhi Chen","doi":"10.1109/EDTM53872.2022.9798237","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798237","url":null,"abstract":"In order to construct highly reliable image storages with triple-level-cell (TLC) 3D charge-trap NAND flash memory, the image coding strategy is optimized by taking the memory properties into account. Firstly, error bits at different program states are studied on the NAND chip tester, and then we propose a high-to-low flipping (HLF) coding scheme to suppress bit-error-rate (BER). It is found that the HLF coding scheme can effectively suppress BER during the long-time retention, which is important to prolong the lifetime of image storages. Specially, in the fresh block, BER is reduced to x63.9% ~ 44.9%; while in the 2000 PE cycled block, BER can be reduced to x34.9% ~ 15.6%.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114176928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9798355
Yixin Zhu, C. Wan
Photoelectric synapses have attracted intensive attention due to their ultra-fast signal transmission, high bandwidth, low crosstalk and energy consumption. We proposed an indium gallium zinc oxide (IGZO) nanofiber based photoelectric synapse. The device has been demonstrated with versatile capabilities in mimicking biological synapse and the potential for constructing artificial neural networks (ANNs) with 5 bits precision and 15 fJ weight updating energy.
{"title":"IGZO Nanofiber Photoelectric Synapse for Artificial Neural Networks","authors":"Yixin Zhu, C. Wan","doi":"10.1109/EDTM53872.2022.9798355","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798355","url":null,"abstract":"Photoelectric synapses have attracted intensive attention due to their ultra-fast signal transmission, high bandwidth, low crosstalk and energy consumption. We proposed an indium gallium zinc oxide (IGZO) nanofiber based photoelectric synapse. The device has been demonstrated with versatile capabilities in mimicking biological synapse and the potential for constructing artificial neural networks (ANNs) with 5 bits precision and 15 fJ weight updating energy.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1766 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129509512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9797973
Sishuo Yang, L. Qian
Surface plasma is effective to enhance the light absorption of semiconductor and accordingly the photodetection performance of related photodetectors, but its application in the region of deep-ultraviolet light still face severe challenges. Herein, a β-Ga2O3 solar-blind photodetector with Sn nanoparticles array is fabricated. Due to the surface plasma effect of Sn nanoparticles with suitable sizes, the photodetection characteristics of β-Ga2O3 solar-blind photodetector, including light to dark current ratio, responsivity and detectivity, have been successfully doubled, resulting in ultrahigh sensitivity. This work provides an alternative technique to realize low-cost, high-performance and solar-blind photodetectors.
{"title":"Localized surface plasmon-enhanced photodetection in β-Ga2O3 solar-blind photodetector with Sn nanoparticles array","authors":"Sishuo Yang, L. Qian","doi":"10.1109/EDTM53872.2022.9797973","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9797973","url":null,"abstract":"Surface plasma is effective to enhance the light absorption of semiconductor and accordingly the photodetection performance of related photodetectors, but its application in the region of deep-ultraviolet light still face severe challenges. Herein, a β-Ga2O3 solar-blind photodetector with Sn nanoparticles array is fabricated. Due to the surface plasma effect of Sn nanoparticles with suitable sizes, the photodetection characteristics of β-Ga2O3 solar-blind photodetector, including light to dark current ratio, responsivity and detectivity, have been successfully doubled, resulting in ultrahigh sensitivity. This work provides an alternative technique to realize low-cost, high-performance and solar-blind photodetectors.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124694752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9797991
We Chang, G. Luo, Yi-Shuo Huang, C. Chu, Yao-Jen Lee, Bo-Yuan Chen, Chun-Hsiung Lin, Wen-Fa Wu, W. Yeh
Due to the higher hole mobility and free of dislocations, the SiGe channel is more practical than the Ge channel for the industrial to push technology nodes further. In this work, the SiGe Gate-All-Around (GAA) p-FETs and Si GAA n-FETs were fabricated on the same Si/SiGe multilayer epitaxial wafer for the first time. The SiGe and Si multi-bridge channels (MBC) were respectively formed by Si interlayers selective etching and SiGe interlayers selective etching. For improving interface quality between Si and high-k, both Si and SiGe surfaces were processed with H2O2 treatment and forming gas (FG) annealing before the high-k gate deposition. The process scheme in this work can be easily applied to integrate SiGe GAA p-FETs and Si GAA n-FETs on the same wafer.
{"title":"SiGe and Si Gate-All-Around FET Fabricated by Selective Etching the Same Epitaxial Layers","authors":"We Chang, G. Luo, Yi-Shuo Huang, C. Chu, Yao-Jen Lee, Bo-Yuan Chen, Chun-Hsiung Lin, Wen-Fa Wu, W. Yeh","doi":"10.1109/EDTM53872.2022.9797991","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9797991","url":null,"abstract":"Due to the higher hole mobility and free of dislocations, the SiGe channel is more practical than the Ge channel for the industrial to push technology nodes further. In this work, the SiGe Gate-All-Around (GAA) p-FETs and Si GAA n-FETs were fabricated on the same Si/SiGe multilayer epitaxial wafer for the first time. The SiGe and Si multi-bridge channels (MBC) were respectively formed by Si interlayers selective etching and SiGe interlayers selective etching. For improving interface quality between Si and high-k, both Si and SiGe surfaces were processed with H2O2 treatment and forming gas (FG) annealing before the high-k gate deposition. The process scheme in this work can be easily applied to integrate SiGe GAA p-FETs and Si GAA n-FETs on the same wafer.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123673387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9797997
Arvind Gurusekaran, Mukhtar Ahmad, M. Ciocca, E. Avancini, P. Lugli, L. Petti
Additive manufacturing of antennas on three-dimensional (3D) surfaces can reduce material wastage by depositing material only where required on the substrate. Here we show for the first time ultra high frequency (UHF) dipole antennas on 3D printed polylactic acid (PLA) substrate printed using dispense and water transfer techniques. Antenna measurements yield return losses (S11) of -20 dB and -17 dB, achieved respectively for dispense printed and water transferred samples, which are in good agreement with simulation results.
{"title":"Analysis of Dispense and Water Transfer Printing as Fabrication Methods for UHF Antennas on 3D Printed Substrates","authors":"Arvind Gurusekaran, Mukhtar Ahmad, M. Ciocca, E. Avancini, P. Lugli, L. Petti","doi":"10.1109/EDTM53872.2022.9797997","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9797997","url":null,"abstract":"Additive manufacturing of antennas on three-dimensional (3D) surfaces can reduce material wastage by depositing material only where required on the substrate. Here we show for the first time ultra high frequency (UHF) dipole antennas on 3D printed polylactic acid (PLA) substrate printed using dispense and water transfer techniques. Antenna measurements yield return losses (S11) of -20 dB and -17 dB, achieved respectively for dispense printed and water transferred samples, which are in good agreement with simulation results.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"334 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120886238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9798080
A. Lopez-Bezanilla
A set of rules based on charge transfer principles to create dynamically stable transition metal, lanthanide, and actinide based low-dimensional borides is provided. By employing basic chemical rules based on a charge transfer analysis of metal atoms to electron deficient honeycombed B lattices we predict and describe complex covalent two-dimensional (2D) heterostructures hosting Dirac states. The guidelines are supported with the analysis of first-principles computed phonon spectra. Multilayered borides open a rich playground to explore novel physical properties and new materials.
{"title":"Two-Dimensional Borides Discovery","authors":"A. Lopez-Bezanilla","doi":"10.1109/EDTM53872.2022.9798080","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798080","url":null,"abstract":"A set of rules based on charge transfer principles to create dynamically stable transition metal, lanthanide, and actinide based low-dimensional borides is provided. By employing basic chemical rules based on a charge transfer analysis of metal atoms to electron deficient honeycombed B lattices we predict and describe complex covalent two-dimensional (2D) heterostructures hosting Dirac states. The guidelines are supported with the analysis of first-principles computed phonon spectra. Multilayered borides open a rich playground to explore novel physical properties and new materials.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114068387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-03-06DOI: 10.1109/EDTM53872.2022.9798192
Suyang Liu, Yue Zhang, Zijian Zhang, M. Inuishi
We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.
{"title":"A Novel Lateral Reverse Conducting Trench IGBT on SOI employing NPN bipolar with small area penalty and switching energy loss","authors":"Suyang Liu, Yue Zhang, Zijian Zhang, M. Inuishi","doi":"10.1109/EDTM53872.2022.9798192","DOIUrl":"https://doi.org/10.1109/EDTM53872.2022.9798192","url":null,"abstract":"We propose a novel design of N-channel Reverse Conducting lateral IGBT (RC-LIGBT) based on silicon-on-insulator (SOI) technology with replacing an N+ anode by an NPN bipolar in the embedded diode region. The snap-back effect can be suppressed drastically by the proposed structure with simple fabrication process using one additional masking step of ion implantation as verified by the process and the device simulation. The use of trench structure and injection control drastically improves the trade of relationship between the turn-off energy loss and the structure shows the dynamic and the static forward blocking voltage of nearly 400V. The proposed structure has stronger thermal stability and can reduce the area penalty compared with the other structures ever reported.","PeriodicalId":158478,"journal":{"name":"2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)","volume":"330 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115970923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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